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Results: 1-24 |
Results: 24
SPONTANEOUS LONG-WAVELENGTH INTERLEVEL EMISSION IN QUANTUM-DOT LASER STRUCTURES
Authors: VOROBEV LE FIRSOV DA SHALYGIN VA TULUPENKO VN SHERNYAKOV YM EGOROV AY ZHUKOV AE KOVSH AR KOPEV PS KOCHNEV IV LEDENTSOV NN MAKSIMOV MV USTINOV VM ALFEROV ZI
Citation: Le. Vorobev et al., SPONTANEOUS LONG-WAVELENGTH INTERLEVEL EMISSION IN QUANTUM-DOT LASER STRUCTURES, Technical physics letters, 24(8), 1998, pp. 590-592
OPERATING CHARACTERISTICS AND THEIR ANISOTROPY IN A HIGH-POWER LASER (1.5 W, 300 K) WITH A QUANTUM-DOT ACTIVE-REGION
Authors: SHERNYAKOV YM EGOROV AY VOLOVIK BV ZHUKOV AE KOVSH AR LUNEV AV LEDENTSOV NN MAKSIMOV MV SAKHAROV AV USTINOV VM ZHAO Z KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ym. Shernyakov et al., OPERATING CHARACTERISTICS AND THEIR ANISOTROPY IN A HIGH-POWER LASER (1.5 W, 300 K) WITH A QUANTUM-DOT ACTIVE-REGION, Technical physics letters, 24(5), 1998, pp. 351-353
LOW-THRESHOLD QUANTUM-DOT INJECTION HETEROLASER EMITTING AT 1.84 MU-M
Authors: USTINOV VM KOVSH AR ZHUKOV AE EGOROV AY LEDENTSOV NN LUNEV AV SHERNYAKOV YM MAKSIMOV MV TSATSULNIKOV AF VOLOVIK BV KOPEV PS ALFEROV ZI
Citation: Vm. Ustinov et al., LOW-THRESHOLD QUANTUM-DOT INJECTION HETEROLASER EMITTING AT 1.84 MU-M, Technical physics letters, 24(1), 1998, pp. 22-23
EFFECT OF THE QUANTUM-DOT SURFACE-DENSITY IN THE ACTIVE-REGION ON INJECTION-LASER CHARACTERISTICS
Authors: KOVSH AR ZHUKOV AE EGOROV AY USTINOV VM SHERNYAKOV YM MAKSIMOV MV TSATSULNIKOV AF VOLOVIK BV LUNEV AV LEDENTSOV NN KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ar. Kovsh et al., EFFECT OF THE QUANTUM-DOT SURFACE-DENSITY IN THE ACTIVE-REGION ON INJECTION-LASER CHARACTERISTICS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 997-1000
INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX
Authors: ZHUKOV AE USTINOV VM EGOROV AY KOVSH AR TSATSULNIKOV AF MAXIMOV MV LEDENTSOV NN ZAITSEV SV GORDEEV NY KOPCHATOV VI SHERNYAKOV YM KOPEV PS BIMBERG D ALFEROV ZI
Citation: Ae. Zhukov et al., INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX, Journal of electronic materials, 27(3), 1998, pp. 106-109
HIGH-POWER CONTINUOUS-WAVE OPERATION OF A INGAAS ALGAAS QUANTUM-DOT LASER/
Authors: MAXIMOV MV SHERNYAKOV YM TSATSULNIKOV AF LUNEV AV SAKHAROV AV USTINOV VM EGOROV AY ZHUKOV AE KOVSH AR KOPEV PS ASRYAN LV ALFEROV ZI LEDENTSOV NN BIMBERG D KOSOGOV AO WERNER P
Citation: Mv. Maximov et al., HIGH-POWER CONTINUOUS-WAVE OPERATION OF A INGAAS ALGAAS QUANTUM-DOT LASER/, Journal of applied physics, 83(10), 1998, pp. 5561-5563
SPONTANEOUS FAR-IR EMISSION ACCOMPANYING TRANSITIONS OF CHARGE-CARRIERS BETWEEN LEVELS OF QUANTUM DOTS
Authors: VOROBEV LE FIRSOV DA SHALYGIN VA TULUPENKO VN SHERNYAKOV YM LEDENTSOV NN USTINOV VM ALFEROV ZI
Citation: Le. Vorobev et al., SPONTANEOUS FAR-IR EMISSION ACCOMPANYING TRANSITIONS OF CHARGE-CARRIERS BETWEEN LEVELS OF QUANTUM DOTS, JETP letters, 67(4), 1998, pp. 275-279
INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: MAXIMOV MV KOCHNEV IV SHERNYAKOV YM ZAITSEV SV GORDEEV NY TSATSULNIKOV AF SAKHAROV AV KRESTNIKOV IL KOPEV PS ALFEROV ZI LEDENTSOV NN BIMBERG D KOSOGOV AO WERNER P GOSELE U
Citation: Mv. Maximov et al., INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 36(6B), 1997, pp. 4221-4223
QUANTUM-DOT CW HETEROJUNCTION INJECTION-LASER OPERATING AT ROOM-TEMPERATURE WITH AN OUTPUT POWER OF 1 W
Authors: SHERNYAKOV YM EGOROV AY ZHUKOV AE ZAITSEV SV KOVSH AR KRESTNIKOV IL LUNEV AV LEDENTSOV NN MAKSIMOV MV SAKHAROV AV USTINOV VM CHEN C KOPEV PS ALFEROV ZI BIMBERG D
Citation: Ym. Shernyakov et al., QUANTUM-DOT CW HETEROJUNCTION INJECTION-LASER OPERATING AT ROOM-TEMPERATURE WITH AN OUTPUT POWER OF 1 W, Technical physics letters, 23(2), 1997, pp. 149-150
OPTICAL-PROPERTIES OF VERTICALLY COUPLED INGAAS QUANTUM DOTS IN A GAAS MATRIX
Authors: MAKSIMOV MV SHERNYAKOV YM ZAITSEV SV GORDEEV NY EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO SAKHAROV AV LEDENTSOV NN USTINOV VM TSATSULNIKOV AF ALFEROV ZI BOHRER J BIMBERG D
Citation: Mv. Maksimov et al., OPTICAL-PROPERTIES OF VERTICALLY COUPLED INGAAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 31(6), 1997, pp. 571-574
QUANTUM-DOT INJECTION HETEROLASER WITH ULTRAHIGH THERMAL-STABILITY OFTHE THRESHOLD CURRENT UP TO 50-DEGREES-C
Authors: MAKSIMOV MV GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV LEDENTSOV NN LUNEV AV RUVIMOV SS SAKHAROV AV TSATSULNIKOV AF SHERNYAKOV YM ALFEROV ZI BIMBERG D
Citation: Mv. Maksimov et al., QUANTUM-DOT INJECTION HETEROLASER WITH ULTRAHIGH THERMAL-STABILITY OFTHE THRESHOLD CURRENT UP TO 50-DEGREES-C, Semiconductors, 31(2), 1997, pp. 124-126
SULFUR PASSIVATION OF INGAAS ALGAAS SQW LASER (977 NM) FACETS IN ALCOHOL-BASED SOLUTIONS/
Authors: BESSOLOV VN LEBEDEV MV SHERNYAKOV YM TSARENKOV BV
Citation: Vn. Bessolov et al., SULFUR PASSIVATION OF INGAAS ALGAAS SQW LASER (977 NM) FACETS IN ALCOHOL-BASED SOLUTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 380-382
LOW-THRESHOLD INJECTION-LASERS BASED ON VERTICALLY COUPLED QUANTUM DOTS
Authors: USTINOV VM EGOROV AY KOVSH AR ZHUKOV AE MAXIMOV MV TSATSULNIKOV AF GORDEEV NY ZAITSEV SV SHERNYAKOV YM BERT NA KOPEV PS ALFEROV ZI LEDENTSOV NN BOHRER J BIMBERG D KOSOGOV AO WERNER P GOSELE U
Citation: Vm. Ustinov et al., LOW-THRESHOLD INJECTION-LASERS BASED ON VERTICALLY COUPLED QUANTUM DOTS, Journal of crystal growth, 175, 1997, pp. 689-695
PROPERTIES OF STRAINED (IN, GA, AL)AS LASERS WITH LATERALLY MODULATEDACTIVE-REGION
Authors: LEDENTSOV NN BIMBERG D SHERNYAKOV YM KOCHNEV V MAXIMOV MV SAKHAROV AV KRESTNIKOV IL EGOROV AY ZHUKOV AE TSATSULNIKOV AF VOLOVIK BV USTINOV VM KOPEV PS ALFEROV ZI KOSOGOV AO WERNER P
Citation: Nn. Ledentsov et al., PROPERTIES OF STRAINED (IN, GA, AL)AS LASERS WITH LATERALLY MODULATEDACTIVE-REGION, Applied physics letters, 70(21), 1997, pp. 2888-2890
AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX
Authors: ALFEROV ZI BERT NA EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV SAKHAROV AV USTINOV VM TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(2), 1996, pp. 194-196
A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS
Authors: ALFEROV ZI GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV KOMIN VV KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV RUVIMOV SS SAKHAROV AV TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS, Semiconductors, 30(2), 1996, pp. 197-200
SEMICONDUCTOR BRAGG REFLECTOR WITH ABSORBING LAYERS
Authors: EVSTROPOV VV KALITEEVSKII MA LIPKO AL SINITSYN MA TSARENKOV BV SHERNYAKOV YM YAVICH BS
Citation: Vv. Evstropov et al., SEMICONDUCTOR BRAGG REFLECTOR WITH ABSORBING LAYERS, Semiconductors, 30(1), 1996, pp. 57-59
EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SADOFEV YG TOPCHII AN FALEEV NN FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES, Semiconductors, 29(3), 1995, pp. 195-198
INCREASE OF THE LEVEL OF CATASTROPHIC OPT ICAL DEGRADATION OF INGAAS-ALGAAS (977 HM) LASER-DIODES AFTER SULFIDIZING IN ISOPROPYL ALCOHOL-BASED SOLUTIONS
Authors: BESSOLOV VN LEBEDEV MV TSARENKOV BV SHERNYAKOV YM
Citation: Vn. Bessolov et al., INCREASE OF THE LEVEL OF CATASTROPHIC OPT ICAL DEGRADATION OF INGAAS-ALGAAS (977 HM) LASER-DIODES AFTER SULFIDIZING IN ISOPROPYL ALCOHOL-BASED SOLUTIONS, Pis'ma v Zurnal tehniceskoj fiziki, 21(14), 1995, pp. 53-56
POWER SUPERMODE INGAAS-GAAS LASERS (LAMBD A=0.98 MU-M) GROWN BY THE ORGANOMETAL GAS-PHASE EPITAXY TECHNIQUE
Authors: BORODITSKII ML DULKIN AE KOCHNEV IV LIVSHITS DA SOKOLOVA NO RAFAILOV EU TARASOV IS SHERNYAKOV YM YAVICH BS
Citation: Ml. Boroditskii et al., POWER SUPERMODE INGAAS-GAAS LASERS (LAMBD A=0.98 MU-M) GROWN BY THE ORGANOMETAL GAS-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(6), 1994, pp. 62-66
ELECTRICAL-PROPERTIES OF EPITAXIAL P-N GAP STRUCTURES DEPOSITED ON SI-SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., ELECTRICAL-PROPERTIES OF EPITAXIAL P-N GAP STRUCTURES DEPOSITED ON SI-SUBSTRATES, Semiconductors, 27(8), 1993, pp. 729-732
CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/
Authors: GARBUZOV DZ GULAKOV AB KOCHNEV IV SHERNYAKOV YM KHALFIN VB YAVICH BS
Citation: Dz. Garbuzov et al., CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/, Semiconductors, 27(10), 1993, pp. 946-949
INJECTION ELECTROLUMINESCENCE OF EPITAXIA L GAP OF P-N-STRUCTURES ON SI SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N ROSSIN VV FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., INJECTION ELECTROLUMINESCENCE OF EPITAXIA L GAP OF P-N-STRUCTURES ON SI SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 19(15), 1993, pp. 61-64
STUDY OF INTERNAL BAND OF AMPLIFICATION M ODULATION OF INGAAS-GAAS INJECTION-LASERS WITH TENSED QUANTUM-DIMENSIONAL ACTIVE LAYER AT FREQUENCIES UP TO 75 HTZ
Authors: VENUS GB PORTNOI EL SHERNYAKOV YM YAVICH BS
Citation: Gb. Venus et al., STUDY OF INTERNAL BAND OF AMPLIFICATION M ODULATION OF INGAAS-GAAS INJECTION-LASERS WITH TENSED QUANTUM-DIMENSIONAL ACTIVE LAYER AT FREQUENCIES UP TO 75 HTZ, Pis'ma v Zurnal tehniceskoj fiziki, 19(11), 1993, pp. 53-58
Risultati: 1-24 |