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Results: 1-20 |
Results: 20

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., ANNEALING BEHAVIOR OF DEEP TRAP LEVEL IN P-GATE, JPN J A P 1, 37(6A), 1998, pp. 3282-3283

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., IMPURITY LEVELS IN P-TYPE LAYERED SEMICONDUCTOR INSE DOPED WITH HG, Physica status solidi. b, Basic research, 209(1), 1998, pp. 93-99

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., CHARACTERIZATION OF PHOSPHORUS IN LAYER SEMICONDUCTOR GASE, Journal of luminescence, 79(2), 1998, pp. 79-84

Authors: SHIGETOMI S IKARI T NISHIMURA H
Citation: S. Shigetomi et al., TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE OF LAYER SEMICONDUCTOR P-GATE, Journal of luminescence, 78(2), 1998, pp. 117-120

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., ELECTRICAL AND OPTICAL CHARACTERISTICS OF THE LAYER SEMICONDUCTOR P-GASE DOPED WITH AG, Physica status solidi. a, Applied research, 160(1), 1997, pp. 159-164

Authors: KATO K MIDORIKAWA S SHIGETOMI S MIZUNO K
Citation: K. Kato et al., RENAL-PROTECTIVE EFFECT OF TEMOCAPRIL, A BILIARY EXCRETIVE ACE-INHIBITOR, IN DIABETIC NEPHROPATHY, Diabetologia, 40, 1997, pp. 1433-1433

Authors: WATANABE H KURIKI M IWAMOTO M NIIMURA S SHIGETOMI S
Citation: H. Watanabe et al., ABNORMALITY OF FIBRINOLYTIC SYSTEM IN PATIENTS WITH NIDDM, Diabetologia, 40, 1997, pp. 1622-1622

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., PHOTOLUMINESCENCE SPECTRA OF N-GASE LAYERED SEMICONDUCTOR-DOPED WITH SN, JPN J A P 1, 35(8), 1996, pp. 4291-4292

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., PHOTOLUMINESCENCE OF LAYER SEMICONDUCTOR P-GASE DOPED WITH MG, Physica status solidi. a, Applied research, 156(2), 1996, pp. 21-24

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., ELECTRICAL-PROPERTIES OF LAYER SEMICONDUCTOR P-GASE DOPED WITH CU, Journal of applied physics, 80(8), 1996, pp. 4779-4781

Authors: SHIGETOMI S
Citation: S. Shigetomi, ECOLOGY AND PRACTICAL TECHNOLOGY - PEASANT FARMING SYSTEMS IN THAILAND - TANABE,S, Developing economies, 34(3), 1996, pp. 342-346

Authors: SHIGETOMI S
Citation: S. Shigetomi, THE TRANSMISSION OF INFORMATION IN THE TRANSACTING OF PRIMARY PRODUCTS - THE CASE OF QUALITY IMPROVEMENT IN THAILAND NATURAL-RUBBER PRODUCTION, Developing economies, 33(2), 1995, pp. 203-221

Authors: KUCHEL OG SHIGETOMI S
Citation: Og. Kuchel et S. Shigetomi, DOPAMINERGIC ABNORMALITIES IN HYPERTENSION ASSOCIATED WITH MODERATE RENAL-INSUFFICIENCY, Hypertension, 23(1), 1994, pp. 90000240-90000245

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., IMPURITY LEVELS IN LAYER SEMICONDUCTOR P-GASE DOPED WITH MN, Journal of applied physics, 76(1), 1994, pp. 310-314

Authors: SANADA H TANAKA K ISHII H NIIMURA S YAMADA Z SHIGETOMI S FUKUCHI S
Citation: H. Sanada et al., A ROLE OF PERIPHERAL DOPAMINE IN THE PATHOGENESIS OF HYPERTENSION IN SPONTANEOUSLY HYPERTENSIVE RATS, Japanese Heart Journal, 35(4), 1994, pp. 566-566

Authors: SHIGETOMI S IKARI T NISHIMURA H
Citation: S. Shigetomi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF P-GASE DOPED WITH SB (VOL 32, PG2731, 1993), JPN J A P 1, 32(9A), 1993, pp. 4042-4042

Authors: SHIGETOMI S IKARI T NISHIMURA H
Citation: S. Shigetomi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF P-GAAE DOPED WITH SB, JPN J A P 1, 32(6A), 1993, pp. 2731-2734

Authors: IKARI T MIYAZAKI K SHIGETOMI S FUTAGAMI K
Citation: T. Ikari et al., PHOTOACOUSTIC INVESTIGATIONS OF SHALLOW ACCEPTORS IN SILICON BY A PIEZOELECTRIC TRANSDUCER, IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 40(2), 1993, pp. 110-113

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF LAYER SEMICONDUCTOR P-GASE DOPEDWITH ZN, Journal of applied physics, 74(6), 1993, pp. 4125-4129

Authors: SHIGETOMI S IKARI T NAKASHIMA H
Citation: S. Shigetomi et al., ELECTRICAL CHARACTERISTICS OF LAYER SEMICONDUCTOR P-GASE DOPED WITH CD, Journal of applied physics, 73(9), 1993, pp. 4686-4688
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