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1-19
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Results: 19
Authors:
HAMAMURA H
ITOH H
SHIMOGAKI Y
AOYAMA J
YOSHIMI T
UEDA J
KOMIYAMA H
Citation: H. Hamamura et al., STRUCTURAL-CHANGE OF TIN TI/SIO2 MULTILAYERS BY N-2 ANNEALING/, Thin solid films, 320(1), 1998, pp. 31-34
Authors:
CHAE YK
EGASHIRA Y
SHIMOGAKI Y
SUGAWARA K
KOMIYAMA H
Citation: Yk. Chae et al., EXPERIMENTAL AND NUMERICAL-ANALYSIS OF RAPID REACTION TO INITIATE THERADICAL-CHAIN REACTIONS IN WSIX-CVD, Thin solid films, 320(1), 1998, pp. 151-158
Authors:
SUDO S
NAKANO Y
SUGIYAMA M
SHIMOGAKI Y
KOMIYAMA H
TADA K
Citation: S. Sudo et al., IN-SITU AS-P EXCHANGE MONITORING IN METAL-ORGANIC VAPOR-PHASE EPITAXYOF INGAAS INP HETEROSTRUCTURE BY SPECTROSCOPIC AND KINETIC ELLIPSOMETRY/, Thin solid films, 313, 1998, pp. 604-608
Authors:
CHAE YK
SHIMOGAKI Y
KOMIYAMA H
Citation: Yk. Chae et al., THE ROLE OF GAS-PHASE REACTIONS DURING CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM (HFAC)CU(TMVS), Journal of the Electrochemical Society, 145(12), 1998, pp. 4226-4233
Authors:
SUGIYAMA M
KUSUNOKI K
SHIMOGAKI Y
SUDO S
NAKANO Y
NAGAMOTO H
SUGAWARA K
TADA K
KOMIYAMA H
Citation: M. Sugiyama et al., KINETIC-STUDIES ON THERMAL-DECOMPOSITION OF MOVPE SOURCES USING FOURIER-TRANSFORM INFRARED-SPECTROSCOPY, Applied surface science, 117, 1997, pp. 746-752
Authors:
NISHIOKA K
SUGIYAMA M
NEZUKA M
SHIMOGAKI Y
NAKANO Y
TADA K
KOMIYAMA H
Citation: K. Nishioka et al., OPTIMIZATION OF ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION-BEAM ETCHING REACTORS FOR DRY-ETCHING OF GAAS WITH CL-2, Journal of the Electrochemical Society, 144(9), 1997, pp. 3191-3197
Authors:
LIM SW
SHIMOGAKI Y
NAKANO Y
TADA K
KOMIYAMA H
Citation: Sw. Lim et al., REDUCTION-MECHANISM IN THE DIELECTRIC-CONSTANT OF FLUORINE-DOPED SILICON DIOXIDE FILM, Journal of the Electrochemical Society, 144(7), 1997, pp. 2531-2537
Authors:
EGASHIRA Y
AITA H
SAITO T
SHIMOGAKI Y
KOMIYAMA H
SUGAWARA K
Citation: Y. Egashira et al., MODELING AND SIMULATION OF BLANKET CHEMICAL-VAPOR-DEPOSITION OF WSIX FROM WF6 SI2H6/, Electronics & communications in Japan. Part 2, Electronics, 79(1), 1996, pp. 83-92
Authors:
SUGIYAMA M
YAMAIZUMI T
NEZUKA M
SHIMOGAKI Y
NAKANO Y
TADA K
KOMIYAMA H
Citation: M. Sugiyama et al., SIMPLE KINETIC-MODEL OF ECR REACTIVE ION-BEAM ETCHING REACTOR FOR THEOPTIMIZATION OF GAAS ETCHING PROCESS, JPN J A P 1, 35(2B), 1996, pp. 1235-1241
Authors:
SUDO S
ONISHI H
NAKANO Y
SHIMOGAKI Y
TADA K
MONDRY MJ
COLDREN LA
Citation: S. Sudo et al., IMPURITY-FREE DISORDERING OF INGAAS INGAALAS QUANTUM-WELLS ON INP BY DIELECTRIC THIN CAP FILMS AND CHARACTERIZATION OF ITS INPLANE SPATIAL-RESOLUTION/, JPN J A P 1, 35(2B), 1996, pp. 1276-1279
Authors:
LIM SW
SHIMOGAKI Y
NAKANO Y
TADA K
KOMIYAMA H
Citation: Sw. Lim et al., PREPARATION OF LOW-DIELECTRIC-CONSTANT F-DOPED SIO2-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(2B), 1996, pp. 1468-1473
Authors:
LIM SW
SHIMOGAKI Y
NAKANO Y
TADA K
KOMIYAMA H
Citation: Sw. Lim et al., PREPARATION OF LOW DIELECTRIC-CONSTANT F-DOPED SIO2-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(6), 1996, pp. 832-834
Authors:
SAITO T
SHIMOGAKI Y
EGASHIRA Y
KOMIYAMA H
SUGAWARA K
TAKAHIRO K
NAGATA S
YAMAGUCHI S
Citation: T. Saito et al., KINETIC-STUDY OF WSIX-CVD PROCESSES - A COMPARISON OF WF6 SIH4 AND WF6/SI2H6 REACTION SYSTEMS/, Electronics & communications in Japan. Part 2, Electronics, 78(10), 1995, pp. 73-84
Authors:
OKAMOTO K
YAMADA A
SHIMOGAKI Y
NAKANO Y
TADA K
Citation: K. Okamoto et al., CHARACTERIZATION OF P-TYPE AND N-TYPE IMPURITY DIFFUSIONS IN GAAS FROM DOPED SILICA FILMS, JPN J A P 1, 34(2B), 1995, pp. 1127-1134
Authors:
SUGIYAMA M
YAMAIZUMI T
NEZUKA M
SHIMOGAKI Y
NANAKO Y
TADA K
KOMIYAMA H
Citation: M. Sugiyama et al., A SIMPLE KINETIC-MODEL FOR THE OPTIMIZATION OF ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION-BEAM ETCHING PERFORMANCE FOR GAAS, Applied physics letters, 67(7), 1995, pp. 897-899
Authors:
SAITO T
SHIMOGAKI Y
EGASHIRA Y
KOMIYAMA H
YUYAMA Y
SUGAWARA K
TAKAHIRO K
NAGATA S
YAMAGUCHI S
Citation: T. Saito et al., DEPOSITION OF WSIX FILMS FROM PREACTIVATED MIXTURE OF WF6 SIH4/, JPN J A P 1, 33(1A), 1994, pp. 275-279
Authors:
FUJINO K
EGASHIRA Y
SHIMOGAKI Y
KOMIYAMA H
Citation: K. Fujino et al., STEP COVERAGE ANALYSIS FOR HEXAMETHYLDISILOXANE AND OZONE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 33(3B), 1994, pp. 120000473-120000475
Authors:
SHIMOGAKI Y
UCHIDA T
SHIGA S
EGASHIRA Y
KOMIYAMA H
Citation: Y. Shimogaki et al., MONTE-CARLO SIMULATION ON THE STEP COVERAGE FORMATION PROCESSES IN CHEMICAL-VAPOR-DEPOSITION, Journal de physique. IV, 3(C3), 1993, pp. 203-203
Authors:
FUJINO K
EGASHIRA Y
SHIMOGAKI Y
KOMIYAMA H
Citation: K. Fujino et al., STEP-COVERAGE SIMULATION FOR TETRAETHOXYSILANE AND OZONE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 140(8), 1993, pp. 2309-2312
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