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Results:
1-12
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Results: 12
Authors:
ZHONG L
SHIMURA F
Citation: L. Zhong et F. Shimura, INTERFACE TRAPS CREATION BY SUBBAND GAP IRRADIATION IN SILICON DIOXIDE ON SILICON WITHOUT APPLIED ELECTRIC-FIELD, Journal of applied physics, 79(5), 1996, pp. 2509-2512
Authors:
DAIO H
BUCZKOWSKI A
SHIMURA F
Citation: H. Daio et al., INFLUENCE OF CRYSTAL THERMAL HISTORY ON SURFACE RECOMBINATION LIFETIME AT ELEVATED-TEMPERATURES IN MAGNETIC-FIELD-APPLIED CZOCHRALSKI SILICON, JPN J A P 1, 33(4A), 1994, pp. 1970-1971
Authors:
DAIO H
BUCZKOWSKI A
SHIMURA F
Citation: H. Daio et al., LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1590-1593
Authors:
ZHONG L
SHIMURA F
Citation: L. Zhong et F. Shimura, SUBSTITUTIONAL DIFFUSION OF TRANSITION-METAL IMPURITIES IN SILICON, JPN J A P 2, 32(8B), 1993, pp. 120001113-120001116
Authors:
DAIO H
SHIMURA F
Citation: H. Daio et F. Shimura, DEPENDENCE OF MINORITY-CARRIER RECOMBINATION LIFETIME ON SURFACE MICROROUGHNESS IN SILICON-WAFERS, JPN J A P 2, 32(12B), 1993, pp. 120001792-120001794
Authors:
MANDELIS A
BLEISS R
SHIMURA F
Citation: A. Mandelis et al., HIGHLY RESOLVED SEPARATION OF CARRIER-WAVE AND THERMAL-WAVE CONTRIBUTIONS TO PHOTOTHERMAL SIGNALS FROM CR-DOPED SILICON USING RATE-WINDOW INFRARED RADIOMETRY, Journal of applied physics, 74(5), 1993, pp. 3431-3434
Authors:
ZHONG L
TSUYA H
SHIMURA F
Citation: L. Zhong et al., MEASUREMENT OF THE ELECTRONIC TRANSFER PROCESS IN NITRIDE FILM ON A SILICON SUBSTRATE VIA PHOTOCONDUCTANCE DECAY, Journal of applied physics, 74(12), 1993, pp. 7311-7314
Authors:
CHEN ZH
BLEISS R
MANDELIS A
BUCZKOWSKI A
SHIMURA F
Citation: Zh. Chen et al., PHOTOTHERMAL RATE-WINDOW SPECTROMETRY FOR NONCONTACT BULK LIFETIME MEASUREMENTS IN SEMICONDUCTORS, Journal of applied physics, 73(10), 1993, pp. 5043-5048
Authors:
BUCZKOWSKI A
ROZGONYI G
SHIMURA F
MISHRA K
Citation: A. Buczkowski et al., PHOTOCONDUCTANCE MINORITY-CARRIER LIFETIME VS SURFACE PHOTOVOLTAGE DIFFUSION LENGTH IN SILICON, Journal of the Electrochemical Society, 140(11), 1993, pp. 3240-3245
Authors:
ZHONG L
ANDO K
TSUYA H
SHIMURA F
Citation: L. Zhong et al., EFFECT OF ULTRAVIOLET-IRRADIATION UPON THE RECOMBINATION LIFETIME OF SILICON-WAFERS COVERED WITH A DIELECTRIC FILM, Applied physics letters, 63(9), 1993, pp. 1246-1248
Authors:
IKEDA N
BUCZKOWSKI A
SHIMURA F
Citation: N. Ikeda et al., NONCONTACT CHARACTERIZATION FOR GROWN-IN DEFECTS IN CZOCHRALSKI SILICON-WAFERS WITH A LASER MICROWAVE PHOTOCONDUCTANCE METHOD, Applied physics letters, 63(21), 1993, pp. 2914-2916
Authors:
ZHONG L
LING L
SHIMURA F
Citation: L. Zhong et al., EFFECT OF HYDROGEN TREATMENT UPON SILICON SURFACE INVESTIGATED WITH THE MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY, Applied physics letters, 63(1), 1993, pp. 99-101
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1-12
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