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Results: 1-25/43
Authors:
SUGINO T
KURIYAMA K
KAWASAKI S
IWASAKI Y
SHIRAFUJI J
Citation: T. Sugino et al., INTERNAL ELECTRON-EMISSION IN PHOSPHORUS-DOPED POLYCRYSTALLINE DIAMOND FIELD EMITTERS, JPN J A P 2, 37(4A), 1998, pp. 413-416
Authors:
SUGINO T
KAWASAKI S
TANIOKA K
SHIRAFUJI J
Citation: T. Sugino et al., ELECTRON-EMISSION CHARACTERISTICS OF BORON-NITRIDE FILMS SYNTHESIZED BY PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1211-1214
Authors:
SUGINO T
KAWASAKI S
YOKOTA Y
IWASAKI Y
SHIRAFUJI J
Citation: T. Sugino et al., ELECTRON-EMISSION CHARACTERISTICS OF POLYCRYSTALLINE DIAMOND FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 720-723
Authors:
SUGINO T
TANIOKA K
KAWASAKI S
SHIRAFUJI J
Citation: T. Sugino et al., ELECTRON-EMISSION FROM NANOCRYSTALLINE BORON-NITRIDE FILMS SYNTHESIZED BY PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 632-635
Authors:
SUGINO T
IWASAKI Y
KAWASAKI S
YOKOTA Y
HATTORI R
SHIRAFUJI J
Citation: T. Sugino et al., CHARACTERISTICS OF METAL-POLYCRYSTALLINE DIAMOND CONTACT FIELD EMITTERS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 677-681
Authors:
SUGINO T
IWASAKI Y
KAWASAKI S
HATTORI R
SHIRAFUJI J
Citation: T. Sugino et al., GROWTH OF PHOSPHORUS-DOPED POLYCRYSTALLINE DIAMOND FILMS ADN THEIR APPLICATION TO FIELD EMITTERS, Diamond films and technology, 8(1), 1998, pp. 29-35
Authors:
CHIRAKAWIKUL K
SUJARIDCHAI T
RATWISES B
KRUANGAM D
PANYAKEOW S
BOONKOSUM W
SUGINO T
SHIRAFUJI J
Citation: K. Chirakawikul et al., PREPARATION OF P-TYPE POLYCRYSTALLINE DIAMOND FILMS AND THEIR APPLICATIONS TO HOLE INJECTION LAYERS IN AMORPHOUS SIC-H THIN-FILM LIGHT-EMITTING-DIODES, Journal of non-crystalline solids, 230, 1998, pp. 1156-1159
CHARACTERIZATION OF GAAS-SURFACES TREATED WITH PHOSPHINE GAS PHOTODECOMPOSED BY AN ARF EXCIMER-LASER
Authors:
SUGINO T
NINOMIYA H
SHIRAFUJI J
MATSUDA K
Citation: T. Sugino et al., CHARACTERIZATION OF GAAS-SURFACES TREATED WITH PHOSPHINE GAS PHOTODECOMPOSED BY AN ARF EXCIMER-LASER, Applied physics letters, 72(12), 1998, pp. 1472-1474
Authors:
HATTORI R
AOKI Y
SUGANO T
SHIRAFUJI J
FUJIKI T
Citation: R. Hattori et al., EPITAXIAL-GROWTH OF POLY(DIMETHYLSILANE) EVAPORATED-FILMS ON POLY(TETRAFLUOROETHYLENE) LAYER, JPN J A P 1, 36(2), 1997, pp. 819-823
Authors:
SUGINO T
TANIOKA K
KAWASAKI S
SHIRAFUJI J
Citation: T. Sugino et al., CHARACTERIZATION AND FIELD-EMISSION OF SULFUR-DOPED BORON-NITRIDE SYNTHESIZED BY PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 36(4B), 1997, pp. 463-466
Authors:
HATTORI R
SUGINO T
SHIRAFUJI J
Citation: R. Hattori et al., INTERNAL FIELD-EMISSION AT METAL DIAMOND CONTACT AND PERFORMANCE OF THIN-FILM FIELD EMITTERS - COMPUTER-SIMULATION/, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 884-888
Authors:
SUGINO T
IWASAKI Y
KAWASAKI S
HATTORI R
SHIRAFUJI J
Citation: T. Sugino et al., ELECTRON-EMISSION CHARACTERISTICS OF METAL DIAMOND FIELD EMITTERS/, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 889-892
Authors:
INOUE M
SHIMADA A
SHIRAFUJI J
Citation: M. Inoue et al., AFM OBSERVATION OF SI SIO2 INTERFACE SUBJECTED TO ELECTRIC STRESS/, Applied surface science, 117, 1997, pp. 187-191
Authors:
HATTORI R
SUGANO T
SHIRAFUJI J
Citation: R. Hattori et al., PHOTOLUMINESCENCE FROM SILICON-CHAIN CLUSTER IN POLY(DIMETHYLSILANE) EVAPORATED FILM, Applied surface science, 114, 1997, pp. 472-475
Authors:
SUGINO T
KAWASAKI S
TANIOKA K
SHIRAFUJI J
Citation: T. Sugino et al., ELECTRON-EMISSION FROM BORON-NITRIDE COATED SI FIELD EMITTERS, Applied physics letters, 71(18), 1997, pp. 2704-2706
Authors:
HIRATA D
SUGINO T
SHIRAFUJI J
Citation: D. Hirata et al., IMPROVEMENT OF DARK CURRENT-DENSITY OF ALINAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR USING PHOSPHINE-PLASMA-TREATED SCHOTTKY-BARRIER/, JPN J A P 1, 35(3), 1996, pp. 1779-1780
Authors:
INOUE M
SHIMADA A
SHIRAFUJI J
Citation: M. Inoue et al., CAPTURE CROSS-SECTION OF ELECTRIC-STRESS-INDUCED INTERFACE STATES IN (100)SI METAL OXIDE/SEMICONDUCTOR CAPACITORS/, JPN J A P 1, 35(12A), 1996, pp. 5915-5920
Authors:
INOUE M
SHIMADA A
SHIRAFUJI J
Citation: M. Inoue et al., OXIDE-VOLTAGE AND ITS POLARITY DEPENDENCE OF INTERFACE-STATE-GENERATION EFFICIENCY IN (100)N-SI METAL OXIDE/SEMICONDUCTOR CAPACITORS/, JPN J A P 1, 35(12A), 1996, pp. 5921-5924
Authors:
HATTORI R
SUGANO T
SHIRAFUJI J
FUJIKI T
Citation: R. Hattori et al., ROOM-TEMPERATURE ULTRAVIOLET ELECTROLUMINESCENCE FROM EVAPORATED POLY(DIMETHYLSILANE) FILM, JPN J A P 2, 35(11B), 1996, pp. 1509-1511
Authors:
SHIRAFUJI J
SUGINO T
Citation: J. Shirafuji et T. Sugino, ELECTRICAL-PROPERTIES OF DIAMOND SURFACES, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 706-713
Authors:
SUGINO T
ITAGAKI T
SHIRAFUJI J
Citation: T. Sugino et al., FORMATION OF PN JUNCTIONS BY BONDING OF GAAS LAYER ONTO DIAMOND, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 714-717
Authors:
SAKAMOTO Y
SUGINO T
MIYAZAKI T
SHIRAFUJI J
Citation: Y. Sakamoto et al., FORMATION OF PN(X) INP STRUCTURE BY IN-SITU REMOTE PLASMA PROCESSES/, Journal of electronic materials, 25(4), 1996, pp. 597-601
Authors:
TAKAHASHI N
SHIOTA M
ZHU Y
SHIMIZU M
HIRATA D
SAKAMOTO Y
SUGINO T
SHIRAFUJI J
Citation: N. Takahashi et al., THERMAL-STABILITY OF AL0.48IN0.52AS GA0.47IN0.53AS/INP HETEROSTRUCTURE AND ITS IMPROVEMENT BY PHOSPHIDIZATION/, Journal of electronic materials, 25(4), 1996, pp. 633-636
Authors:
SUGINO T
HIRATA D
YAMAMURA I
MATSUDA K
SHIRAFUJI J
Citation: T. Sugino et al., CHARACTERIZATION OF ELECTRON TRAPS IN PLASMA-TREATED ALINAS, Journal of electronic materials, 25(4), 1996, pp. 733-737
Authors:
SUGINO T
SAKAMOTO Y
MIYAZAKI T
SHIRAFUJI J
Citation: T. Sugino et al., INTERFACE PROPERTIES OF PNX INP STRUCTURES BY IN-SITU REMOTE PLASMA PROCESSES/, Applied surface science, 104, 1996, pp. 428-433