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Results: 1-11 |
Results: 11
THERMAL-CONDUCTIVITY OF ISOTOPICALLY ENRICHED SI
Authors: CAPINSKI WS MARIS HJ BAUSER E SILIER I ASENPALMER M RUF T CARDONA M GMELIN E
Citation: Ws. Capinski et al., THERMAL-CONDUCTIVITY OF ISOTOPICALLY ENRICHED SI, Applied physics letters, 71(15), 1997, pp. 2109-2111
GROWTH OF MULTI-CRYSTALLINE SILICON ON SEEDED GLASS FROM METALLIC SOLUTIONS
Authors: SILIER I GUTJAHR A BANHART F KONUMA M BAUSER E SCHOLLKOPF V FREY H
Citation: I. Silier et al., GROWTH OF MULTI-CRYSTALLINE SILICON ON SEEDED GLASS FROM METALLIC SOLUTIONS, Materials letters, 28(1-3), 1996, pp. 87-91
CENTRIFUGAL TECHNIQUES FOR SOLUTION GROWTH OF SEMICONDUCTOR LAYERS
Authors: KONUMA M SILIER I GUTJAHR A HANSSON PO CRISTIANI G CZECH E BAUSER E BANHART F
Citation: M. Konuma et al., CENTRIFUGAL TECHNIQUES FOR SOLUTION GROWTH OF SEMICONDUCTOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 234-238
SOLUTION GROWTH OF EPITAXIAL SEMICONDUCTOR-ON-INSULATOR LAYERS
Authors: SILIER I GUTJAHR A NAGEL N HANSSON PO CZECH E KONUMA M BAUSER E BANHART F KOHLER R RAIDT H JENICHEN B
Citation: I. Silier et al., SOLUTION GROWTH OF EPITAXIAL SEMICONDUCTOR-ON-INSULATOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 727-730
ADHESION IN GROWTH OF DEFECT-FREE SILICON OVER SILICON-OXIDE
Authors: RAIDT H KOHLER R BANHART F JENICHEN B GUTJAHR A KONUMA M SILIER I BAUSER E
Citation: H. Raidt et al., ADHESION IN GROWTH OF DEFECT-FREE SILICON OVER SILICON-OXIDE, Journal of applied physics, 80(7), 1996, pp. 4101-4107
CHARACTERIZATION OF HIGH-PURITY GAAS FAR-INFRARED PHOTOCONDUCTORS
Authors: FARHOOMAND J MCMURRAY RE HALLER E BAUSER E SILIER I
Citation: J. Farhoomand et al., CHARACTERIZATION OF HIGH-PURITY GAAS FAR-INFRARED PHOTOCONDUCTORS, International journal of infrared and millimeter waves, 16(6), 1995, pp. 1051-1064
SEMICONDUCTOR LIQUID-PHASE EPITAXY FOR SOLAR-CELL APPLICATION
Authors: KONUMA M SILIER I CZECH E BAUSER E
Citation: M. Konuma et al., SEMICONDUCTOR LIQUID-PHASE EPITAXY FOR SOLAR-CELL APPLICATION, Solar energy materials and solar cells, 34(1-4), 1994, pp. 251-256
A LOCAL VIBRATIONAL-MODE INVESTIGATION OF P-TYPE SI-DOPED GAAS
Authors: ASHWIN MJ FAHY MR NEWMAN RC WAGNER J ROBBIE DA SANGSTER MJL SILIER I BAUSER E BRAUN W PLOOG K
Citation: Mj. Ashwin et al., A LOCAL VIBRATIONAL-MODE INVESTIGATION OF P-TYPE SI-DOPED GAAS, Journal of applied physics, 76(12), 1994, pp. 7839-7849
THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .2. STRAINS AND DEFECT NUCLEATION STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: BANHART F NAGEL N PHILLIPP F CZECH E SILIER I BAUSER E
Citation: F. Banhart et al., THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .2. STRAINS AND DEFECT NUCLEATION STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY, Applied physics. A, Solids and surfaces, 57(5), 1993, pp. 441-448
THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .1. GROWTH AND COALESCENCE OF DEFECT-FREE SILICON LAYERS
Authors: NAGEL N BANHART F CZECH E SILIER I PHILLIPP F BAUSER E
Citation: N. Nagel et al., THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .1. GROWTH AND COALESCENCE OF DEFECT-FREE SILICON LAYERS, Applied physics. A, Solids and surfaces, 57(3), 1993, pp. 249-254
LIQUID-PHASE EPITAXY CENTRIFUGE FOR 100 MM DIAMETER SI SUBSTRATES
Authors: KONUMA M CZECH E SILIER I BAUSER E
Citation: M. Konuma et al., LIQUID-PHASE EPITAXY CENTRIFUGE FOR 100 MM DIAMETER SI SUBSTRATES, Applied physics letters, 63(2), 1993, pp. 205-207
Risultati: 1-11 |