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Results: 1-25/27
Authors:
ALEKSANDROV OV
ZAKHARIN AO
SOBOLEV NA
SHEK EI
MAKOVIICHUK MI
PARSHIN EO
Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS UPON ANNEALING OF DYSPROSIUM-IMPLANTED ANDHOLMIUM-IMPLANTED SILICON, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 921-923
Authors:
SOBOLEV NA
GERSTER J
MAUCKNER G
WOLPERT M
LIMMER W
THONKE K
SAUER R
PRESTING H
KONIG U
Citation: Na. Sobolev et al., ION-BEAM-INDUCED STRUCTURAL TRANSFORMATIONS IN SIMGEN SUPERLATTICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1057-1061
Authors:
SOBOLEV NA
GUSEV OB
SHEK EI
VDOVIN VI
YUGOVA TG
EMELYANOV AM
Citation: Na. Sobolev et al., PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE, Applied physics letters, 72(25), 1998, pp. 3326-3328
Authors:
EMELYANOV AM
SOBOLEV NA
YAKIMENKO AN
Citation: Am. Emelyanov et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF ERBIUM-RELATED ELECTROLUMINESCENCE IN REVERSE-BIASED SILICON P-N-JUNCTION, Applied physics letters, 72(10), 1998, pp. 1223-1225
Authors:
KYUTT RN
SOBOLEV NA
Citation: Rn. Kyutt et Na. Sobolev, X-RAY-DIFFRACTION STUDIES OF SILICON IMPLANTED WITH HIGH-ENERGY ERBIUM IONS, Physics of the solid state, 39(5), 1997, pp. 759-762
Authors:
SAVCHUK VA
KORZUN BV
SOBOLEV NA
MAKOVETSKAYA LA
Citation: Va. Savchuk et al., LUMINESCENCE OF COPPER-ALUMINUM DISELENIDE, Semiconductors, 31(3), 1997, pp. 315-318
Authors:
COLWELL MA
DUBYNIN AV
KOROLIUK AY
SOBOLEV NA
Citation: Ma. Colwell et al., RUSSIAN NATURE-RESERVES AND CONSERVATION OF BIOLOGICAL DIVERSITY, Natural areas journal, 17(1), 1997, pp. 56-68
Authors:
SOBOLEV NA
EMELYANOV AM
SHTELMAKH KF
Citation: Na. Sobolev et al., AVALANCHE BREAKDOWN-RELATED ELECTROLUMINESCENCE IN SINGLE-CRYSTAL SI-ER-O, Applied physics letters, 71(14), 1997, pp. 1930-1932
Authors:
ALEKSANDROV OV
SOBOLEV NA
SHEK EI
MERKULOV AV
Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS DURING ANNEALING OF ERBIUM-IMPLANTED SILICON, Semiconductors, 30(5), 1996, pp. 468-471
Authors:
BRESLER MS
GUSEV OB
ZAKHARCHENYA BP
PAK PE
SOBOLEV NA
SHEK EI
YASSIEVICH IN
MAKOVIICHUK MI
PARSHIN EO
Citation: Ms. Bresler et al., ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON, Semiconductors, 30(5), 1996, pp. 479-482
Authors:
ALESHIN VD
BRINKEVICH DI
VABISHCHEVICH SA
SOBOLEV NA
Citation: Vd. Aleshin et al., INFLUENCE OF LANTHANIDES ON THE DEFECT-IMPURITY COMPOSITION OF GAP EPITAXIAL LAYERS, Semiconductors, 30(5), 1996, pp. 483-484
Authors:
SOBOLEV NA
SHEK EI
KURBAKOV AI
RUBINOVA EE
SOKOLOV AE
Citation: Na. Sobolev et al., CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT-TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES, Applied physics A: Materials science & processing, 62(3), 1996, pp. 259-262
Authors:
ULYASHIN AG
BUMAI YA
SHLOPAK NV
SOBOLEV NA
PROKHORENKO TA
Citation: Ag. Ulyashin et al., HYDROGEN EFFECTS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAMMA-IRRADIATED N-TYPE GAAS EPILAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 108(1-2), 1996, pp. 65-69
Authors:
SOBOLEV NA
KORSHUNOV FP
SAUER R
THONKE K
KONIG U
PRESTING H
Citation: Na. Sobolev et al., INFLUENCE OF ELECTRON-IRRADIATION AND ANNEALING ON THE PHOTOLUMINESCENCE OF SI GE SUPERLATTICES AND SI/GE QUANTUM-WELLS/, Journal of crystal growth, 167(3-4), 1996, pp. 502-507
Authors:
GOLUBEV VG
KROPOTOV GI
PATSEKIN AV
SOBOLEV NA
SHEK EI
DUKIN AA
Citation: Vg. Golubev et al., FAR-INFRARED PHOTOCONDUCTIVITY OF SILICON IRRADIATED WITH FAST-NEUTRONS, Semiconductors, 29(10), 1995, pp. 981-983
Authors:
SOBOLEV NA
SHVARTS EA
KREINDLIN ML
MOKIEVSKY VO
ZUBAKIN VA
Citation: Na. Sobolev et al., RUSSIA PROTECTED AREAS - A SURVEY AND IDENTIFICATION OF DEVELOPMENT PROBLEMS, Biodiversity and conservation, 4(9), 1995, pp. 964-983
Authors:
ALEXANDROV OV
SOBOLEV NA
SHEK EI
Citation: Ov. Alexandrov et al., EFFECT OF EXCESS INTRINSIC POINT-DEFECTS ON ERBIUM DIFFUSION IN SILICON, Semiconductor science and technology, 10(7), 1995, pp. 948-951
Authors:
DEMAATGERSDORF I
GREGORKIEWICZ T
AMMERLAAN CAJ
SOBOLEV NA
Citation: I. Demaatgersdorf et al., PHOTOLUMINESCENCE MEASUREMENTS ON ERBIUM-DOPED SILICON, Semiconductor science and technology, 10(5), 1995, pp. 666-671
Authors:
NAIDENOV VO
SOBOLEV NA
ALEXANDROV OB
BRESLER MS
GUSEV OV
GUSINSKII GM
SHEK EI
MAKAVIICHUK MI
PARSHIN EO
Citation: Vo. Naidenov et al., NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 587-589
Authors:
SOBOLEV NA
Citation: Na. Sobolev, SILICON DOPING BY ERBIUM TO CREATE LIGHT-EMITTING STRUCTURES, Microelectronics, 26(7), 1995, pp. 725-735
Authors:
MAMEDLI EM
SOBOLEV NA
Citation: Em. Mamedli et Na. Sobolev, MECHANISMS OF OPERATING-SYSTEMS SUPPORTING FAULT-TOLERANCE OF MULTICOMPUTER CONTROL-SYSTEMS, Automation and remote control, 56(8), 1995, pp. 1065-1105
Authors:
EMTSEV VV
POLOSKIN DS
SOBOLEV NA
SHEK EI
Citation: Vv. Emtsev et al., DONOR CENTERS IN CZ-SI CONTAINING MAGNESIUM INTRODUCED BY NUCLEAR-TRANSMUTATION DOPING, Semiconductors, 28(6), 1994, pp. 624-627
Authors:
SOBOLEV NA
BRESLER MS
GUSEV OB
SHEK EI
MAKAVIICHUK MI
PARSHIN EO
Citation: Na. Sobolev et al., EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER, Semiconductors, 28(11), 1994, pp. 1100-1102
Authors:
ALEKSANDROV OV
EMTSEV VV
POLOSKIN DS
SOBOLEV NA
SHEK EI
Citation: Ov. Aleksandrov et al., SHALLOW ACCEPTOR CENTERS FORMED DURING DIFFUSION OF ERBIUM IN SILICON, Semiconductors, 28(11), 1994, pp. 1126-1127
Authors:
KURBAKOV AI
SOBOLEV NA
Citation: Ai. Kurbakov et Na. Sobolev, GAMMA-RAY DIFFRACTION IN THE STUDY OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 149-158