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Results: 1-25/28
Authors:
GEBHARDT W
HAHN B
STANZL H
DEUFEL M
Citation: W. Gebhardt et al., LIGHT-EMITTING-DIODES FROM MOVPE-GROWN P-DOPED AND N-DOPED II-VI COMPOUNDS, Journal of crystal growth, 159(1-4), 1996, pp. 238-243
Authors:
HERMANS J
WOITOK J
GEURTS J
SOLLNER J
HEUKEN M
STANZL H
GEBHARDT W
Citation: J. Hermans et al., OPTICAL INVESTIGATION OF CL-DOPED ZNSE AND ZNSXSE1-X LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 363-367
Authors:
KUHN WS
LUSSON A
QUHEN B
GRATTEPAIN C
DUMONT H
GOROCHOV O
BAUER S
WOLF K
WORZ M
REISINGER T
ROSENAUER A
WAGNER HP
STANZL H
GEBHARDT W
Citation: Ws. Kuhn et al., THE METAL-ORGANIC VAPOR-PHASE EPITAXY OF ZNTE .3. CORRELATION OF GROWTH AND LAYER PROPERTIES, Progress in crystal growth and characterization of materials, 31(1-2), 1995, pp. 119-177
Authors:
LANKES S
STANZL H
WOLF K
GIEGLER M
GEBHARDT W
Citation: S. Lankes et al., EXCITON LINE BROADENING IN ZNSEXTE1-X GAAS, Journal of physics. Condensed matter, 7(7), 1995, pp. 1287-1292
Authors:
MAJUMDER FA
KALT H
KLINGSHIRN C
STANZL H
GEBHARDT W
Citation: Fa. Majumder et al., CARRIER DYNAMICS AND LASING IN EPITAXIAL ZNTE LAYERS ON GAAS, Physica status solidi. b, Basic research, 188(1), 1995, pp. 191-198
Authors:
STANZL H
REISINGER T
WOLF K
KASTNER M
HAHN B
GEBHARDT W
Citation: H. Stanzl et al., ZNSE-BASED MOVPE AND MBE GROWN LEDS, Physica status solidi. b, Basic research, 187(2), 1995, pp. 303-307
Authors:
MAYER H
ROSSLER U
WOLF K
ELSTNER A
STANZL H
REISINGER T
GEBHARDT W
Citation: H. Mayer et al., STRAIN SPLITTING OF NITROGEN ACCEPTOR LEVELS IN ZNSE, Physical review. B, Condensed matter, 52(7), 1995, pp. 4956-4964
Authors:
WOLF K
JILKA S
ROSENAUER A
SCHUTZ G
STANZL H
REISINGER T
GEBHARDT W
Citation: K. Wolf et al., HIGH-RESOLUTION X-RAY-DIFFRACTION INVESTIGATIONS OF EPITAXIALLY GROWNZNSE GAAS LAYERS/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 120-124
Authors:
WOLF K
ELSTNER A
STANZL H
REISINGER T
GEBHARDT W
Citation: K. Wolf et al., RESONANT LUMINESCENCE OF EXCITONS, CL-DONORS AND N-ACCEPTORS IN EPITAXIALLY GROWN ZNSE GAAS-LAYERS/, Journal of luminescence, 65(4), 1995, pp. 185-197
Authors:
WOLF K
JILKA S
SAHIN H
STANZL H
REISINGER T
NAUMOV A
GEBHARDT W
Citation: K. Wolf et al., RELAXATION PROCESS AND LUMINESCENCE OF LATTICE-DEFECTS IN EPITAXIALLYGROWN ZNSE GAAS LAYERS/, Journal of crystal growth, 152(1-2), 1995, pp. 34-41
Authors:
BOCHNICEK Z
HOLY V
WOLF K
STANZL H
GEBHARDT W
Citation: Z. Bochnicek et al., HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY OF ZNTE LAYERS AT ELEVATED-TEMPERATURES, Journal of applied physics, 78(2), 1995, pp. 862-867
Authors:
WAGNER HP
WITTMANN S
SCHMITZER H
STANZL H
Citation: Hp. Wagner et al., PHASE-MATCHED 2ND-HARMONIC GENERATION USING THIN-FILM ZNTE OPTICAL WAVE-GUIDES, Journal of applied physics, 77(8), 1995, pp. 3637-3640
Authors:
MAJUMDER FA
KLINGSHIRN C
WESTPHALING R
KALT H
NAUMOV A
STANZL H
GEBHARDT W
Citation: Fa. Majumder et al., GAIN PROCESSES IN ZNTE EPILAYERS ON GAAS, Physica status solidi. b, Basic research, 186(2), 1994, pp. 591-599
Authors:
MAJUMDER FA
KALT H
KLINGSHIRN C
NAUMOV A
STANZL H
GEBHARDT W
Citation: Fa. Majumder et al., OPTICAL GAIN IN ZNTE GAAS EPITAXIAL LAYERS GROWN BY MOVPE/, Journal of luminescence, 60-1, 1994, pp. 12-15
Authors:
WOLF K
NAUMOV A
WAGNER HP
GILG F
SAHIN H
STANZL H
GEBHARDT W
Citation: K. Wolf et al., RESONANT PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY ON DONOR AND ACCEPTOR STATES IN DOPED ZNTE EPILAYERS, Journal of luminescence, 60-1, 1994, pp. 544-547
Authors:
NAUMOV A
PERMOGOROV S
VONDEROSTEN W
STOLZ H
STANZL H
GEBHARDT W
Citation: A. Naumov et al., EXCITON RELAXATION IN MOVPE GROWN ZNSEXTE1-X EPILAYERS, Journal of luminescence, 58(1-6), 1994, pp. 248-251
Authors:
STANZL H
WOLF K
HAHN B
GEBHARDT W
Citation: H. Stanzl et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE-BASED LIGHT-EMITTING-DIODES, Journal of crystal growth, 145(1-4), 1994, pp. 918-923
Authors:
WOLF K
STANZL H
NAUMOV A
WAGNER HP
KUHN W
HAHN B
GEBHARDT W
Citation: K. Wolf et al., GROWTH AND DOPING OF ZNTE AND ZNSE EPILAYERS WITH METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 412-417
Authors:
KUHN WS
DRIAD R
STANZL H
LUSSON A
WOLF K
QUHEN B
SAHIN H
SVOB L
GRATTEPAIN C
QUESADA X
GEBHARDT W
GOROCHOV O
Citation: Ws. Kuhn et al., INVESTIGATION OF HYDROGEN, CARBON AND FURTHER IMPURITIES IN THE METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE WITH DITERTIARYBUTYLSELENIDE AND METHYLALLYLSELENIDE, Journal of crystal growth, 138(1-4), 1994, pp. 448-454
Authors:
NAUMOV A
STANZL H
WOLF K
ROSENAUER A
LANKES S
GEBHARDT W
Citation: A. Naumov et al., EXCITON RECOMBINATION IN ZNSEXTE1 X/ZNTE QWS AND ZNSEXTE1-X EPILAYERSGROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 138(1-4), 1994, pp. 595-600
Authors:
KLINGSHIRN C
KALT H
UMLAUFF M
PETRI W
MAJUMDER FA
BOGDANOV SV
LANGBEIN W
GRUN M
HETTERICH M
GEYZERS KP
HEUKEN M
NAUMOV A
STANZL H
GEBHARDT W
Citation: C. Klingshirn et al., STIMULATED-EMISSION OF II-VI EPITAXIAL LAYERS, Journal of crystal growth, 138(1-4), 1994, pp. 786-790
Authors:
WOLF K
NAUMOV A
REISINGER T
KASTNER M
STANZL H
KUHN W
GEBHARDT W
Citation: K. Wolf et al., LUMINESCENCE CAUSED BY EXTENDED LATTICE-DEFECTS IN EPITAXIALLY GROWN ZNTE LAYERS, Journal of crystal growth, 135(1-2), 1994, pp. 113-122
Authors:
HOLY V
WOLF K
KASTNER M
STANZL H
GEBHARDT W
Citation: V. Holy et al., X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS, Journal of applied crystallography, 27, 1994, pp. 551-557
Authors:
WAGNER HP
LANKES S
WOLF K
WORZ M
REISINGER T
NAUMOV A
KUHN W
STANZL H
GEBHARDT W
Citation: Hp. Wagner et al., RESONANT PHOTOLUMINESCENCE MEASUREMENTS IN AS-DOPED AND P-DOPED ZNTE EPILAYERS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 169-173
Authors:
NAUMOV A
WOLF K
REISINGER T
STANZL H
WAGNER HP
GEBHARDT W
Citation: A. Naumov et al., LUMINESCENCE FROM STRUCTURAL DEFECTS IN HETEROEPITAXIAL MOVPE-GROWN ZNTE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 250-254