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Results: 26-50/52
Authors:
STESMANS A
Citation: A. Stesmans, COMPARATIVE-ANALYSIS OF THE H-2 PASSIVATION OF INTERFACE DEFECTS AT THE (100)SI SIO2 INTERFACE USING ELECTRON-SPIN-RESONANCE/, Solid state communications, 97(4), 1996, pp. 255-259
Authors:
AFANASEV VV
STESMANS A
Citation: Vv. Afanasev et A. Stesmans, HOLE TRAPS IN OXIDE LAYERS THERMALLY GROWN ON SIC, Applied physics letters, 69(15), 1996, pp. 2252-2254
Authors:
STESMANS A
AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, ANNEALING-INDUCED DEGRADATION OF THERMAL SIO2 - S-CENTER GENERATION, Applied physics letters, 69(14), 1996, pp. 2056-2058
Authors:
STESMANS A
Citation: A. Stesmans, REVISION OF H-2 PASSIVATION OF P-B INTERFACE DEFECTS IN STANDARD (111)SI SIO2/, Applied physics letters, 68(19), 1996, pp. 2723-2725
Authors:
STESMANS A
Citation: A. Stesmans, PASSIVATION OF P-B0 AND P-B1 INTERFACE DEFECTS IN THERMAL (100)SI SIO2 WITH MOLECULAR-HYDROGEN/, Applied physics letters, 68(15), 1996, pp. 2076-2078
Authors:
AFANASEV VV
STESMANS A
BASSLER M
PENSL G
SCHULZ MJ
HARRIS CI
Citation: Vv. Afanasev et al., ELIMINATION OF SIC SIO2 INTERFACE STATES BY PREOXIDATION ULTRAVIOLET-AZONE CLEANING/, Applied physics letters, 68(15), 1996, pp. 2141-2143
Authors:
AFANASEV VV
DENIJS JMM
STESMANS A
BALK P
Citation: Vv. Afanasev et al., RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2, Microelectronic engineering, 28(1-4), 1995, pp. 43-46
Authors:
STESMANS A
VANGORP G
Citation: A. Stesmans et G. Vangorp, CENTER-DOT-SI-SI-3 DEFECT AT THERMALLY GROWN (111)SI SI3N4 INTERFACES/, Physical review. B, Condensed matter, 52(12), 1995, pp. 8904-8920
Authors:
STESMANS A
SCHEERLINCK F
Citation: A. Stesmans et F. Scheerlinck, ELECTRON-SPIN-RESONANCE ANALYSIS OF THE NATURAL INTRINSIC EX CENTER IN THERMAL SIO2 ON SI, Physical review. B, Condensed matter, 51(8), 1995, pp. 4987-4997
Authors:
STESMANS A
Citation: A. Stesmans, OXIDATION TEMPERATURE-DEPENDENT RESTRUCTURING OF THE P-B DEFECT AT THE (111)SI SIO2 INTERFACE/, Solid state communications, 96(6), 1995, pp. 397-399
Authors:
STESMANS A
SCHEERLINCK F
Citation: A. Stesmans et F. Scheerlinck, PARAMETERS CONTROLLING THE GENERATION OF NATURAL INTRINSIC EX DEFECTSIN THERMAL SIO2 ON SI, Journal of non-crystalline solids, 187, 1995, pp. 119-123
Authors:
VANHEUSDEN K
STESMANS A
AFANASEV VV
Citation: K. Vanheusden et al., HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED OXIDES - CORRESPONDENCE BETWEEN ESR AND C-V RESULTS, Journal of non-crystalline solids, 187, 1995, pp. 253-256
Authors:
AFANASEV VV
DENIJS JMM
BALK P
STESMANS A
Citation: Vv. Afanasev et al., DEGRADATION OF THE THERMAL OXIDE OF THE SI SIO2AL SYSTEM DUE TO VACUUM-ULTRAVIOLET IRRADIATION/, Journal of applied physics, 78(11), 1995, pp. 6481-6490
Authors:
VANHEUSDEN K
STESMANS A
AFANASEV VV
Citation: K. Vanheusden et al., COMBINED ELECTRON-SPIN-RESONANCE AND CAPACITANCE-VOLTAGE ANALYSIS OF HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED SIO2, Journal of applied physics, 77(6), 1995, pp. 2419-2424
Authors:
VANHEUSDEN K
STESMANS A
Citation: K. Vanheusden et A. Stesmans, IMPACT OF SUPPLEMENTAL IMPLANTATION OF OXYGEN ON DEFECT CENTERS IN THE SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURE, Applied physics letters, 67(10), 1995, pp. 1399-1401
Authors:
STESMANS A
SCHEERLINCK F
Citation: A. Stesmans et F. Scheerlinck, NATURAL INTRINSIC EX CENTER IN THERMAL SIO2 ON SI - O-17 HYPERFINE INTERACTION, Physical review. B, Condensed matter, 50(8), 1994, pp. 5204-5212
Authors:
STESMANS A
Citation: A. Stesmans, A SEPARATE CLASS OF DEFECTS IN SILICA - THE NATURAL EX CENTER IN THERMAL SIO2 ON SI, Journal of non-crystalline solids, 179, 1994, pp. 10-21
Authors:
STESMANS A
VANHEUSDEN K
Citation: A. Stesmans et K. Vanheusden, GENERATION OF DELOCALIZED E'DELTA DEFECTS IN BURIED SI OXIDE BY HOLE INJECTION, Journal of applied physics, 76(3), 1994, pp. 1681-1685
Authors:
STESMANS A
SCHEERLINCK F
Citation: A. Stesmans et F. Scheerlinck, GENERATION ASPECTS OF THE DELOCALIZED INTRINSIC EX DEFECT IN THERMAL SIO2, Journal of applied physics, 75(2), 1994, pp. 1047-1058
Authors:
VANHEUSDEN K
STESMANS A
Citation: K. Vanheusden et A. Stesmans, POSITIVE CHARGING OF BURIED SIO2 BY HYDROGENATION, Applied physics letters, 64(19), 1994, pp. 2575-2577
Authors:
STESMANS A
SCHEERLINCK F
AFANASEV V
Citation: A. Stesmans et al., CHARGE-STATE OF THE NATURAL EX DEFECT IN THERMAL SIO2, Applied physics letters, 64(17), 1994, pp. 2282-2284
Authors:
STESMANS A
SCHEERLINCK F
Citation: A. Stesmans et F. Scheerlinck, NEW DEFECT IN AS-GROWN THERMAL SIO2 INHERENT TO THE GROWTH-PROCESS, Microelectronic engineering, 22(1-4), 1993, pp. 139-142
Authors:
VANHEUSDEN K
STESMANS A
Citation: K. Vanheusden et A. Stesmans, HYDROGEN-INDUCED POSITIVE CHARGING OF BURIED SIO2, Microelectronic engineering, 22(1-4), 1993, pp. 371-374
Authors:
STESMANS A
Citation: A. Stesmans, SPIN-RESONANCE OF INVERSION-LAYER ELECTRONS IN SILICON - COMMENT, Physical review. B, Condensed matter, 47(20), 1993, pp. 13906-13908
Authors:
VANHEUSDEN K
STESMANS A
Citation: K. Vanheusden et A. Stesmans, CHARACTERIZATION AND DEPTH PROFILING OF E'-DEFECTS IN BURIED SIO2, Journal of applied physics, 74(1), 1993, pp. 275-283