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Results: 76-100/100
Authors:
BRANDT MS
STUTZMANN M
Citation: Ms. Brandt et M. Stutzmann, TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE, Solid state communications, 93(6), 1995, pp. 473-477
Authors:
STUTZMANN M
Citation: M. Stutzmann, UNTITLED, Physica status solidi. a, Applied research, 148(2), 1995, pp. 1-1
Authors:
ZEGENHAGEN J
THOMSEN C
STUTZMANN M
SYASSEN K
Citation: J. Zegenhagen et al., SPECIAL ISSUE - CARDONA,MANUEL - A COLLECTION OF PAPERS TO CELEBRATE HIS 60TH BIRTHDAY - PREFACE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(3), 1994, pp. 311-311
Authors:
GRAEFF CFO
STUTZMANN M
EBERHARDT K
Citation: Cfo. Graeff et al., EFFECTS OF THERMAL ANNEALING ON THE OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-GERMANIUM, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 387-396
Authors:
STUTZMANN M
ROSSI MC
BRANDT MS
Citation: M. Stutzmann et al., PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON, Physical review. B, Condensed matter, 50(16), 1994, pp. 11592-11605
Authors:
DEMIERRY P
ETCHEGOIN P
STUTZMANN M
Citation: P. Demierry et al., PLASMA DAMAGE AND ACCEPTOR PASSIVATION IN D2-PLASMA-TREATED INPZN - APHOTOLUMINESCENCE AND ELLIPSOMETRY STUDY, Physical review. B, Condensed matter, 49(8), 1994, pp. 5283-5290
Authors:
ERNST S
ROSENBAUER M
SCHWARZ U
DEAK P
SYASSEN K
STUTZMANN M
CARDONA M
Citation: S. Ernst et al., EFFECTS OF PRESSURE ON THE OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE OF WOHLER SILOXENE, Physical review. B, Condensed matter, 49(8), 1994, pp. 5362-5367
Authors:
GRAEFF CFO
STUTZMANN M
BRANDT MS
Citation: Cfo. Graeff et al., SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS, Physical review. B, Condensed matter, 49(16), 1994, pp. 11028-11034
Authors:
BRANDT MS
STUTZMANN M
Citation: Ms. Brandt et M. Stutzmann, AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD, Journal of applied physics, 75(5), 1994, pp. 2507-2515
Authors:
HEINTZE M
SANTOS PV
NEBEL CE
STUTZMANN M
Citation: M. Heintze et al., LATERAL STRUCTURING OF SILICON THIN-FILMS BY INTERFERENCE CRYSTALLIZATION, Applied physics letters, 64(23), 1994, pp. 3148-3150
Authors:
FUCHS HD
STUTZMANN M
BRANDT MS
ROSENBAUER M
WEBER J
BREITSCHWERDT A
DEAK P
CARDONA M
Citation: Hd. Fuchs et al., POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES, Physical review. B, Condensed matter, 48(11), 1993, pp. 8172-8183
Authors:
KOCKA J
STUCHLIK J
STUTZMANN M
CHEN L
TAUC J
Citation: J. Kocka et al., MICROSCOPIC ORIGIN AND ENERGY-LEVELS OF THE STATES PRODUCED IN A-SI-HBY PHOSPHORUS DOPING, Physical review. B, Condensed matter, 47(20), 1993, pp. 13283-13294
Authors:
DIMOVAMALINOVSKA D
STUTZMANN M
Citation: D. Dimovamalinovska et M. Stutzmann, ELECTRONIC DEFECTS IN SILICON INDUCED BY DEUTERIUM PLASMA TREATMENT, Solid state communications, 86(7), 1993, pp. 421-424
Authors:
BRANDT MS
STUTZMANN M
KOCKA J
Citation: Ms. Brandt et al., SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON NIN-STRUCTURES, Journal of non-crystalline solids, 166, 1993, pp. 693-696
Authors:
BUSTARRET E
THOMSEN C
STUTZMANN M
ASANO A
SUMMONTE C
Citation: E. Bustarret et al., LIGHT-SCATTERING BY ACOUSTIC PHONONS IN UNHYDROGENATED AND HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 927-930
Authors:
STUTZMANN M
BRANDT MS
BUSTARRET E
FUCHS HD
ROSENBAUER M
HOPNER A
WEBER J
Citation: M. Stutzmann et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON, Journal of non-crystalline solids, 166, 1993, pp. 931-936
Authors:
ZACHARIAS M
FREISTEDT H
STOLZE F
DRUSEDAU TP
ROSENBAUER M
STUTZMANN M
Citation: M. Zacharias et al., PROPERTIES OF SPUTTERED A-SIOX-H ALLOYS WITH A VISIBLE LUMINESCENCE, Journal of non-crystalline solids, 166, 1993, pp. 1089-1092
Authors:
GRAEFF CFO
BRANDT MS
EBERHARDT K
CHAMBOULEYRON I
STUTZMANN M
Citation: Cfo. Graeff et al., SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS, Journal of non-crystalline solids, 166, 1993, pp. 15-18
Authors:
SANTOS PV
BRANDT MS
STREET RA
STUTZMANN M
Citation: Pv. Santos et al., ACCELERATED HYDROGEN MIGRATION UNDER STEADY-STATE AND PULSED ILLUMINATION IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 273-276
Authors:
BRANDT MS
STUTZMANN M
Citation: Ms. Brandt et M. Stutzmann, SPIN-DEPENDENT PHOTOCONDUCTIVITY AS A FUNCTION OF WAVELENGTH - A TESTFOR THE CONSTANT PHOTOCURRENT METHOD IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 547-550
Authors:
ROSENBAUER M
STUTZMANN M
FUCHS HD
FINKBEINER S
WEBER J
Citation: M. Rosenbauer et al., TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN POROUS SILICON AND RELATED MATERIALS, Journal of luminescence, 57(1-6), 1993, pp. 153-157
Authors:
FINKBEINER S
WEBER J
ROSENBAUER M
STUTZMANN M
Citation: S. Finkbeiner et al., TRANSIENT PHOTOLUMINESCENCE DECAY IN POROUS SILICON AND SILOXENE, Journal of luminescence, 57(1-6), 1993, pp. 231-234
Authors:
STUTZMANN M
BRANDT MS
ROSENBAUER M
FUCHS HD
FINKBEINER S
WEBER J
DEAK P
Citation: M. Stutzmann et al., LUMINESCENCE AND OPTICAL-PROPERTIES OF SILOXENE, Journal of luminescence, 57(1-6), 1993, pp. 321-330
Authors:
ROSENBAUER M
FUCHS H
STUTZMANN M
Citation: M. Rosenbauer et al., TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - COMMENT, Applied physics letters, 63(4), 1993, pp. 565-566
Authors:
GRAEFF CFO
BUHLEIER R
STUTZMANN M
Citation: Cfo. Graeff et al., LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 62(23), 1993, pp. 3001-3003