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Results: 1-25 | 26-38
Results: 1-25/38
THE STATE OF LIPID-PEROXIDATION SYSTEM IN PATIENTS WITH ISCHEMIC-HEART-DISEASE
Authors: BARSEL VA TSCHEDRINA IS VAKHLYAEV VD AKSYUTINA MS PARAMONOVA MA YUDITCHEV IS SYRKIN AL
Citation: Va. Barsel et al., THE STATE OF LIPID-PEROXIDATION SYSTEM IN PATIENTS WITH ISCHEMIC-HEART-DISEASE, Kardiologia, 38(5), 1998, pp. 18-20
COMPARATIVE INVESTIGATION OF ECR-RIE PATTERNS ON SI AND C FACES OF 6H-SIC USIAG A CF4 O-2 GAS-MIXTURE/
Authors: BONNOT R SYRKIN AL LEVEQUE G BLUET JM CAMASSEL J
Citation: R. Bonnot et al., COMPARATIVE INVESTIGATION OF ECR-RIE PATTERNS ON SI AND C FACES OF 6H-SIC USIAG A CF4 O-2 GAS-MIXTURE/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1463-1466
OVERVIEW OF SIC POWER ELECTRONICS
Authors: CHELNOKOV VE SYRKIN AL DMITRIEV VA
Citation: Ve. Chelnokov et al., OVERVIEW OF SIC POWER ELECTRONICS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1480-1484
INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION
Authors: ANDREEV AN TREGUBOVA AS SCHEGLOV MP SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 141-146
SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES
Authors: SYRKIN AL BLUET JM BASTIDE G BRETAGNON T LEBEDEV AA RASTEGAEVA MG SAVKINA NS CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 236-239
HIGH-TEMPERATURE ELECTRONICS USING SIC - ACTUAL SITUATION AND UNSOLVED PROBLEMS
Authors: CHELNOKOV VE SYRKIN AL
Citation: Ve. Chelnokov et Al. Syrkin, HIGH-TEMPERATURE ELECTRONICS USING SIC - ACTUAL SITUATION AND UNSOLVED PROBLEMS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 248-253
LUMINESCENCE DETERMINATION OF DONOR CONCENTRATION IN N-TYPE 6H-SIC
Authors: DYAKONOVA NV BLUET JM SYRKIN AL CONTRERASAZEMA S
Citation: Nv. Dyakonova et al., LUMINESCENCE DETERMINATION OF DONOR CONCENTRATION IN N-TYPE 6H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 304-307
REACTIVE ION ETCHING OF 6H-SIC IN AN ECR PLASMA OF CF4-O-2 MIXTURES USING BOTH NI AND AL MASKS
Authors: SYRKIN AL BLUET JM CAMASSEL J BONNOT R
Citation: Al. Syrkin et al., REACTIVE ION ETCHING OF 6H-SIC IN AN ECR PLASMA OF CF4-O-2 MIXTURES USING BOTH NI AND AL MASKS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 374-378
CLINICAL AND PSYCHOLOGICAL-ASPECTS OF REA CTION TO DISEASE (PROBLEM OF NOSOGENIAS)
Authors: SMULEVICH AB TKHOSTOV AS SYRKIN AL OVCHARENKO SI DROBIZHEV MY ISCHENKO EN ALMAEV NA LEBEDEVA OI
Citation: Ab. Smulevich et al., CLINICAL AND PSYCHOLOGICAL-ASPECTS OF REA CTION TO DISEASE (PROBLEM OF NOSOGENIAS), Zurnal nevropatologii i psihiatrii im. S.S. Korsakova, 97(2), 1997, pp. 4-9
OXYGEN-FREE RADICAL PROCESSES IN THE PATH OGENESIS OF ISCHEMIC-HEART-DISEASE AND PERSPECTIVES OF THE USE OF AN ANTIOXIDANT UBICHINON FOR THEIR CORRECTION
Authors: KOGAN AK SYRKIN AL DRINITSINA SV KUZNETSOV AB
Citation: Ak. Kogan et al., OXYGEN-FREE RADICAL PROCESSES IN THE PATH OGENESIS OF ISCHEMIC-HEART-DISEASE AND PERSPECTIVES OF THE USE OF AN ANTIOXIDANT UBICHINON FOR THEIR CORRECTION, Kardiologia, 37(12), 1997, pp. 67-73
LIPID PEROXIDE OXIDATION AND ANTIOXIDANT DEFENSE SYSTEM IN MYOCARDIAL-ISCHEMIA
Authors: BARSEL VA SYRKIN AL ELYUBAEVA ID KOGAN IG VAKHLYAEV VD AKSYUTINA MS ARKHIPOVA TV SHEDRINA IS
Citation: Va. Barsel et al., LIPID PEROXIDE OXIDATION AND ANTIOXIDANT DEFENSE SYSTEM IN MYOCARDIAL-ISCHEMIA, Doklady Akademii nauk. Rossijskaa akademia nauk, 351(5), 1996, pp. 706-708
TRANSDERMAL DEPONIT TREATMENT OF ANGINA-P ECTORIS
Authors: ALLILUEV IG PECHERSKAYA MB POLTAVSKAYA GM SYRKIN AL
Citation: Ig. Alliluev et al., TRANSDERMAL DEPONIT TREATMENT OF ANGINA-P ECTORIS, Terapevticeskij arhiv, 68(6), 1996, pp. 55-58
OUTCOMES OF SURGICAL-TREATMENT FOR MALIGN ANT VENTRICULAR-TACHYCARDIA
Authors: BOKERIYA LA KALASHNIKOV VY SYRKIN AL GOLUKHOVA EZ
Citation: La. Bokeriya et al., OUTCOMES OF SURGICAL-TREATMENT FOR MALIGN ANT VENTRICULAR-TACHYCARDIA, Terapevticeskij arhiv, 68(4), 1996, pp. 21-24
ANTIANGINAL EFFICACY OF REGULAR USE OF A TRANSDERMAL NITROGLYCERINE IN PATIENTS WITH STABLE AND UNSTABLE ANGINA
Authors: POLTAVSKAYA MG SYRKIN AL ALLILUEV LG PECHERSKAYA MB
Citation: Mg. Poltavskaya et al., ANTIANGINAL EFFICACY OF REGULAR USE OF A TRANSDERMAL NITROGLYCERINE IN PATIENTS WITH STABLE AND UNSTABLE ANGINA, Kardiologia, 36(4), 1996, pp. 12-14
CARDIAC INJURY IN REMOTE PERIOD AFTER RAD IOTHERAPY
Authors: POLTAVSKAYA MG SYRKIN AL PLAKSINA NA KALASHNIKOV VY CHURGANOVA LY PECHERSKAYA MB
Citation: Mg. Poltavskaya et al., CARDIAC INJURY IN REMOTE PERIOD AFTER RAD IOTHERAPY, Kardiologia, 36(4), 1996, pp. 99-101
EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES
Authors: ORTOLLAND S RAYNAUD C CHANTE JP LOCATELLI ML LEBEDEV AA ANDREEV AN SAVKINA NS CHELNOKOV VE RASTEGAEVA MG SYRKIN AL
Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468
6H-SIC FIELD-EFFECT TRANSISTOR WITH SCHOTTKY-DIODE GATE
Authors: LEBEDEV AA ANIKIN MM KUZNETSOV AN RASTEGAEVA MG SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Aa. Lebedev et al., 6H-SIC FIELD-EFFECT TRANSISTOR WITH SCHOTTKY-DIODE GATE, Semiconductors, 29(7), 1995, pp. 636-638
BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES
Authors: ANDREEV AN LEBEDEV AA RASTEGAEVA MG SNEGOV FM SYRKIN AL CHELNOKOV VE SHESTOPALOVA LN
Citation: An. Andreev et al., BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES, Semiconductors, 29(10), 1995, pp. 957-962
HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V
Authors: ANDREEV AN ANIKIN MM ZELENIN VV IVANOV PA LEBEDEV AA RASTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES
Authors: SYRKIN AL ANDREEV AN LEBEDEV AA RASTEGAEVA MG CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 198-201
NITRATES IN CARDIOLOGICAL PRACTICE - CHOI CE OF DOSAGE FORM
Authors: MAZUR NA SIDORENKO BA METELITSA VI KUKHARCHUK VV SYRKIN AL OLBINSKAYA LI RUDA MY LAZEBNIK LB ARABIDZE GG MOISEEV VS LEBEDEVA NB
Citation: Na. Mazur et al., NITRATES IN CARDIOLOGICAL PRACTICE - CHOI CE OF DOSAGE FORM, Kardiologia, 35(5), 1995, pp. 86-96
METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS
Authors: SYRKIN AL ANDREEV AN LEBEDEV AA RASTEGAEVA MG CHELNOKOV VE
Citation: Al. Syrkin et al., METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS, Journal of applied physics, 78(9), 1995, pp. 5511-5514
OUTLOOK FOR THE DEVELOPMENT OF SUBLIMATION EPITAXY OF SILICON-CARBIDE
Authors: ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., OUTLOOK FOR THE DEVELOPMENT OF SUBLIMATION EPITAXY OF SILICON-CARBIDE, Semiconductors, 28(7), 1994, pp. 700-701
EPITAXIAL-FILMS AND P-N-JUNCTIONS GROWN BY A SUBLIMATION METHOD IN A SYSTEM WITH ELECTRON HEATING
Authors: ANIKIN MM LEBEDEV AA RASTEGAEVA MG STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., EPITAXIAL-FILMS AND P-N-JUNCTIONS GROWN BY A SUBLIMATION METHOD IN A SYSTEM WITH ELECTRON HEATING, Semiconductors, 28(7), 1994, pp. 702-703
METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM
Authors: ANDREEV AN ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM, Semiconductors, 28(6), 1994, pp. 577-579
Risultati: 1-25 | 26-38