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Results:
1-21
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Results: 21
Authors:
Bar-Ilan, AH
Zamir, S
Katz, O
Meyler, B
Salzman, J
Citation: Ah. Bar-ilan et al., GaN layer growth optimization for high power devices, MAT SCI E A, 302(1), 2001, pp. 14-17
Authors:
Shalish, I
de Oliveira, CEM
Shapira, Y
Salzman, J
Citation: I. Shalish et al., Hall photovoltage deep-level spectroscopy of GaN films - art. no. 205313, PHYS REV B, 6420(20), 2001, pp. 5313
Authors:
Zamir, S
Meyler, B
Salzman, J
Citation: S. Zamir et al., Lateral confined epitaxy of GaN layers on Si substrates, J CRYST GR, 230(3-4), 2001, pp. 341-345
Authors:
Tisch, U
Meyler, B
Katz, O
Finkman, E
Salzman, J
Citation: U. Tisch et al., Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures, J APPL PHYS, 89(5), 2001, pp. 2676-2685
Authors:
Shalish, I
Shapira, Y
Burstein, L
Salzman, J
Citation: I. Shalish et al., Surface states and surface oxide in GaN layers, J APPL PHYS, 89(1), 2001, pp. 390-395
Authors:
Katz, O
Garber, V
Meyler, B
Bahir, G
Salzman, J
Citation: O. Katz et al., Gain mechanism in GaN Schottky ultraviolet detectors, APPL PHYS L, 79(10), 2001, pp. 1417-1419
Authors:
Tang, H
Webb, JB
Bardwell, JA
Raymond, S
Salzman, J
Uzan-Saguy, C
Citation: H. Tang et al., Properties of carbon-doped GaN, APPL PHYS L, 78(6), 2001, pp. 757-759
Authors:
Zamir, S
Meyler, B
Salzman, J
Citation: S. Zamir et al., Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy, APPL PHYS L, 78(3), 2001, pp. 288-290
Authors:
Salzman, J
Citation: J. Salzman, War and peace in refugee law jurisprudence, AM J INT LA, 95(2), 2001, pp. 349-380
Authors:
Zhi, D
Tisch, U
Zamir, SH
Wei, M
Zolotoyabko, E
Salzman, J
Citation: D. Zhi et al., Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire, J ELEC MAT, 29(4), 2000, pp. 457-462
Authors:
Shalish, I
Kronik, L
Segal, G
Shapira, Y
Zamir, S
Meyler, B
Salzman, J
Citation: I. Shalish et al., Grain-boundary-controlled transport in GaN layers, PHYS REV B, 61(23), 2000, pp. 15573-15576
Authors:
Salzman, J
Ruhl, JB
Citation: J. Salzman et Jb. Ruhl, Currencies and the commodification of environmental law, STANF LAW R, 53(3), 2000, pp. 607-694
Authors:
Zamir, S
Meyler, B
Zolotoyabko, E
Salzman, J
Citation: S. Zamir et al., The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD, J CRYST GR, 218(2-4), 2000, pp. 181-190
Authors:
Shalish, I
Kronik, L
Segal, G
Shapira, Y
Eizenberg, M
Salzman, J
Citation: I. Shalish et al., Yellow luminescence and Fermi level pinning in GaN layers, APPL PHYS L, 77(7), 2000, pp. 987-989
Authors:
Salzman, J
Uzan-Saguy, C
Kalish, R
Richter, V
Meyler, B
Citation: J. Salzman et al., Thermally activated electrical conductivity in thin GaN epitaxial films, APPL PHYS L, 76(11), 2000, pp. 1431-1433
Authors:
Shalish, I
Kronik, L
Segal, C
Rosenwaks, Y
Shapira, Y
Tisch, U
Salzman, J
Citation: I. Shalish et al., Yellow luminescence and related deep levels in unintentionally doped GaN films, PHYS REV B, 59(15), 1999, pp. 9748-9751
Authors:
Salzman, J
Citation: J. Salzman, Beyond the smokestack: Environmental protection in the service economy, UCLA LAW R, 47(2), 1999, pp. 411-489
Authors:
Bar-Ilan, AH
Zamir, S
Katz, O
Meyler, B
Salzman, J
Citation: Ah. Bar-ilan et al., Multiparameter statistical design of experiments for GaN growth optimization, PHYS ST S-A, 176(1), 1999, pp. 313-317
Authors:
Salzman, J
Uzan-Saguy, C
Meyler, B
Kalish, R
Citation: J. Salzman et al., The effect of grain boundaries on electrical conductivity in thin GaN layers, PHYS ST S-A, 176(1), 1999, pp. 683-687
Authors:
Salzman, J
Citation: J. Salzman, Facing the challenges of a service economy, ENV SCI TEC, 33(23), 1999, pp. 512A-514A
Authors:
Uzan-Saguy, C
Salzman, J
Kalish, R
Richter, V
Tish, U
Zamir, S
Prawer, S
Citation: C. Uzan-saguy et al., Electrical isolation of GaN by ion implantation damage: Experiment and model, APPL PHYS L, 74(17), 1999, pp. 2441-2443
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