AAAAAA
Results:
1-21
|
Results: 21
Authors:
Schwegler, V
Schad, SS
Scherer, M
Kamp, M
Ulu, G
Emsley, M
Unlu, MS
Lell, A
Bader, S
Hahne, B
Lugauer, HJ
Kuhn, F
Weimar, A
Harle, V
Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516
Authors:
Chung, HYA
Pelzmann, A
Drechsler, M
Scherer, M
Schwegler, V
Seyboth, M
Kirchner, C
Kamp, M
Citation: Hya. Chung et al., Multiple-step annealing for 50% enhanced p-conductivity of GaN, J CRYST GR, 230(3-4), 2001, pp. 549-553
Authors:
Scherer, M
Schwegler, V
Seyboth, M
Eberhard, F
Kirchner, C
Kamp, M
Ulu, G
Unlu, MS
Gruhler, R
Hollricher, O
Citation: M. Scherer et al., Characterization of etched facets for GaN-based lasers, J CRYST GR, 230(3-4), 2001, pp. 554-557
Authors:
Scherer, M
Schwegler, V
Seyboth, M
Kirchner, C
Kamp, M
Pelzmann, A
Drechsler, M
Citation: M. Scherer et al., Low resistive p-type GaN using two-step rapid thermal annealing processes, J APPL PHYS, 89(12), 2001, pp. 8339-8341
Authors:
Rotter, T
Mistele, D
Stemmer, J
Seyboth, M
Schwegler, V
Paprotta, S
Fedler, F
Klausing, H
Semchinova, OK
Aderhold, J
Graul, J
Citation: T. Rotter et al., First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide, ELECTR LETT, 37(11), 2001, pp. 715-716
Authors:
Fischer, P
Christen, J
Zacharias, M
Schwegler, V
Kirchner, C
Kamp, M
Citation: P. Fischer et al., Spatially resolved imaging of the spectral emission characteristic of an InGaN/GaN-multi quantum well- light-emitting diode by scanning electroluminescence microscopy, JPN J A P 1, 39(4B), 2000, pp. 2414-2416
Authors:
Schwegler, V
Seyboth, M
Kirchner, C
Scherer, M
Kamp, M
Fischer, P
Christen, J
Zacharias, M
Citation: V. Schwegler et al., Spatially resolved electroluminescence of InGaN-MQW-LEDs, MRS I J N S, 5, 2000, pp. NIL_23-NIL_27
Authors:
Schwegler, V
Seyboth, M
Schad, S
Scherer, M
Kirchner, C
Kamp, M
Stempfle, U
Limmer, W
Sauer, R
Citation: V. Schwegler et al., Temperature distribution in InGaN-MQW LEDs under operation, MRS I J N S, 5, 2000, pp. NIL_556-NIL_561
Authors:
Kirchner, C
Schwegler, V
Eberhard, F
Kamp, M
Ebeling, KJ
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: C. Kirchner et al., MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices, PROG CRYST, 41(1-4), 2000, pp. 57-83
Authors:
Chung, HYA
Wang, C
Kirchner, C
Seyboth, M
Schwegler, V
Scherer, M
Kamp, M
Ebeling, KJE
Beccard, R
Heuken, M
Citation: Hya. Chung et al., Hydride vapour phase epitaxy growth of GaN layers under reduced reactor pressure, PHYS ST S-A, 180(1), 2000, pp. 257-260
Authors:
Rotter, T
Mistele, D
Stemmer, J
Fedler, F
Aderhold, J
Graul, J
Schwegler, V
Kirchner, C
Kamp, M
Heuken, M
Citation: T. Rotter et al., Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions, APPL PHYS L, 76(26), 2000, pp. 3923-3925
Authors:
Kornitzer, G
Grehl, M
Thonke, K
Sauer, R
Kirchner, C
Schwegler, V
Kamp, M
Leszczynski, M
Grzegory, I
Porowski, S
Citation: G. Kornitzer et al., High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers, PHYSICA B, 274, 1999, pp. 66-69
Authors:
Kornitzer, K
Ebner, T
Grehl, M
Thonke, K
Sauer, R
Kirchner, C
Schwegler, V
Kamp, M
Leszczynski, M
Grzegory, I
Porowski, S
Citation: K. Kornitzer et al., High-resolution photoluminescence and reflectance spectra of homoepitaxialGaN layers, PHYS ST S-B, 216(1), 1999, pp. 5-9
Authors:
Kornitzer, K
Ebner, T
Thonke, K
Sauer, R
Krichner, C
Schwegler, V
Kamp, M
Leszczynski, M
Grzegory, I
Porowski, S
Citation: K. Kornitzer et al., Photoluminescence and reflectance spectroscopy of excitonic transitions inhigh-quality homoepitaxial GaN films, PHYS REV B, 60(3), 1999, pp. 1471-1473
Authors:
Schwegler, V
Kirchner, C
Seyboth, M
Kamp, M
Ebeling, KJ
Melnik, YV
Nikolaev, AE
Tsvetkov, D
Dmitriev, VA
Citation: V. Schwegler et al., GaN/SiC quasi-substrates for GaN-based LEDs, PHYS ST S-A, 176(1), 1999, pp. 99-102
Authors:
Fischer, P
Christen, J
Zacharias, M
Schwegler, V
Kirchner, C
Kamp, M
Citation: P. Fischer et al., Scanning electroluminescence microscopy: A powerful novel characterizationtool for light emitting diodes, PHYS ST S-A, 176(1), 1999, pp. 119-123
Authors:
Schwegler, V
Schad, SS
Kirchner, C
Seyboth, M
Kamp, M
Ebeling, KJ
Kudryashov, VE
Turkin, AN
Yunovich, AE
Stempfle, U
Link, A
Limmer, W
Sauer, R
Citation: V. Schwegler et al., Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance, PHYS ST S-A, 176(1), 1999, pp. 783-786
Authors:
Link, A
Bitzer, K
Limmer, W
Sauer, R
Kirchner, C
Schwegler, V
Kamp, M
Ebling, DG
Benz, KW
Citation: A. Link et al., Temperature dependence of the E-2 and A(1)(LO) phonons in GaN and AlN, J APPL PHYS, 86(11), 1999, pp. 6256-6260
Authors:
Kirchner, C
Schwegler, V
Eberhard, F
Kamp, M
Ebeling, KJ
Kornitzer, K
Ebner, T
Thonke, K
Sauer, R
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: C. Kirchner et al., Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology, APPL PHYS L, 75(8), 1999, pp. 1098-1100
Authors:
Fischer, P
Christen, J
Zacharias, M
Schwegler, V
Kirchner, C
Kamp, M
Citation: P. Fischer et al., Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy, APPL PHYS L, 75(22), 1999, pp. 3440-3442
Authors:
Schauler, M
Eberhard, F
Kirchner, C
Schwegler, V
Pelzmann, A
Kamp, M
Ebeling, KJ
Bertram, F
Riemann, T
Christen, J
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125
Risultati:
1-21
|