AAAAAA

   
Results: 1-25 | 26-28
Results: 1-25/28
Fundamental aspects of organometallic vapor phase epitaxy
Authors: Stringfellow, GB
Citation: Gb. Stringfellow, Fundamental aspects of organometallic vapor phase epitaxy, MAT SCI E B, 87(2), 2001, pp. 97-116
Theory of Sb-induced triple-period ordering in GaInP - art. no. 201322
Authors: Wixom, RR Stringfellow, GB Modine, NA
Citation: Rr. Wixom et al., Theory of Sb-induced triple-period ordering in GaInP - art. no. 201322, PHYS REV B, 6420(20), 2001, pp. 1322
Enhancement of compositional modulation in GaInP epilayers by the additionof surfactants during organometallic vapor phase epitaxy growth
Authors: Lee, RT Fetzer, CM Jun, SW Chapman, DC Shurtleff, JK Stringfellow, GB Ok, YW Seong, TY
Citation: Rt. Lee et al., Enhancement of compositional modulation in GaInP epilayers by the additionof surfactants during organometallic vapor phase epitaxy growth, J CRYST GR, 233(3), 2001, pp. 490-502
Shaped single crystals of CaF2 (vol 218, pg 62, 2000)
Authors: Stringfellow, GB
Citation: Gb. Stringfellow, Shaped single crystals of CaF2 (vol 218, pg 62, 2000), J CRYST GR, 223(3), 2001, pp. V-V
Spectroscopic study of surfactant enhanced organometallic vapor phase epitaxy growth of GaInP
Authors: Fetzer, CM Lee, RT Chapman, DC Stringfellow, GB
Citation: Cm. Fetzer et al., Spectroscopic study of surfactant enhanced organometallic vapor phase epitaxy growth of GaInP, J APPL PHYS, 90(2), 2001, pp. 1040-1046
Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy
Authors: Jun, SW Stringfellow, GB Howard, AD Fetzer, CM Shurtleff, JK
Citation: Sw. Jun et al., Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy, J APPL PHYS, 90(12), 2001, pp. 6048-6053
Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order <= 0.55
Authors: Sasaki, A Tsuchida, K Narukawa, Y Kawakami, Y Fujita, S Hsu, Y Stringfellow, GB
Citation: A. Sasaki et al., Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order <= 0.55, J APPL PHYS, 89(1), 2001, pp. 343-347
Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
Authors: Shurtleff, JK Jun, SW Stringfellow, GB
Citation: Jk. Shurtleff et al., Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy, APPL PHYS L, 78(20), 2001, pp. 3038-3040
Sb enhancement of lateral superlattice formation in GaInP
Authors: Fetzer, CM Lee, RT Jun, SW Stringfellow, GB Lee, SM Seong, TY
Citation: Cm. Fetzer et al., Sb enhancement of lateral superlattice formation in GaInP, APPL PHYS L, 78(10), 2001, pp. 1376-1378
Effects of Te doping on ordering and antiphase boundaries in GaInP
Authors: Choi, GJ Spirydon, R Seong, TY Lee, SH Stringfellow, GB
Citation: Gj. Choi et al., Effects of Te doping on ordering and antiphase boundaries in GaInP, JPN J A P 1, 39(2A), 2000, pp. 402-406
Surfactant effects of dopants on ordering in GaInP
Authors: Stringfellow, GB Lee, RT Fetzer, CM Shurtleff, JK Hsu, Y Jun, SW Lee, S Seong, TY
Citation: Gb. Stringfellow et al., Surfactant effects of dopants on ordering in GaInP, J ELEC MAT, 29(1), 2000, pp. 134-139
Effects of Si doping on ordering and domain structures in GaInP
Authors: Lee, SM Seong, TY Lee, RT Stringfellow, GB
Citation: Sm. Lee et al., Effects of Si doping on ordering and domain structures in GaInP, APPL SURF S, 158(3-4), 2000, pp. 223-228
Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy
Authors: Seong, TY Lee, SM Lee, RT Stringfellow, GB
Citation: Ty. Seong et al., Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy, SURF SCI, 457(1-2), 2000, pp. L381-L385
Surface processes in OMVPE - the frontiers
Authors: Stringfellow, GB Shurtleff, JK Lee, RT Fetzer, CM Jun, SW
Citation: Gb. Stringfellow et al., Surface processes in OMVPE - the frontiers, J CRYST GR, 221, 2000, pp. 1-11
Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
Authors: Jun, SW Lee, RT Fetzer, CM Shurtleff, JK Stringfellow, GB Choi, CJ Seong, TY
Citation: Sw. Jun et al., Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy, J APPL PHYS, 88(7), 2000, pp. 4429-4433
Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy
Authors: Lee, RT Shurtleff, JK Fetzer, CM Stringfellow, GB Lee, S Seong, TY
Citation: Rt. Lee et al., Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy, J APPL PHYS, 87(8), 2000, pp. 3730-3735
Heterostructures in GaInP grown using a change in Te doping
Authors: Hsu, Y Fetzer, CM Stringfellow, GB Shurtleff, JK Choi, CJ Seong, TY
Citation: Y. Hsu et al., Heterostructures in GaInP grown using a change in Te doping, J APPL PHYS, 87(11), 2000, pp. 7776-7781
Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
Authors: Jun, SW Fetzer, CM Lee, RT Shurtleff, JK Stringfellow, GB
Citation: Sw. Jun et al., Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy, APPL PHYS L, 76(19), 2000, pp. 2716-2718
The use of a surfactant (Sb) to induce triple period ordering in GaInP
Authors: Fetzer, CM Lee, RT Shurtleff, JK Stringfellow, GB Lee, SM Seong, TY
Citation: Cm. Fetzer et al., The use of a surfactant (Sb) to induce triple period ordering in GaInP, APPL PHYS L, 76(11), 2000, pp. 1440-1442
Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth
Authors: Lee, RT Stringfellow, GB
Citation: Rt. Lee et Gb. Stringfellow, Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth, J ELEC MAT, 28(8), 1999, pp. 963-969
Pyrolysis of monomethylhydrazine for organometallic vapor-phase epitaxy (OMVPE) growth
Authors: Lee, RT Stringfellow, GB
Citation: Rt. Lee et Gb. Stringfellow, Pyrolysis of monomethylhydrazine for organometallic vapor-phase epitaxy (OMVPE) growth, J CRYST GR, 204(3), 1999, pp. 247-255
Step structure and ordering in Zn-doped GaInP
Authors: Lee, SH Fetzer, CM Stringfellow, GB Choi, CJ Seong, TY
Citation: Sh. Lee et al., Step structure and ordering in Zn-doped GaInP, J APPL PHYS, 86(4), 1999, pp. 1982-1987
Te doping of GaInP: Ordering and step structure
Authors: Lee, SH Fetzer, CY Stringfellow, GB Lee, DH Seong, TY
Citation: Sh. Lee et al., Te doping of GaInP: Ordering and step structure, J APPL PHYS, 85(7), 1999, pp. 3590-3596
Band-gap control of GaInP using Sb as a surfactant
Authors: Shurtleff, JK Lee, RT Fetzer, CM Stringfellow, GB
Citation: Jk. Shurtleff et al., Band-gap control of GaInP using Sb as a surfactant, APPL PHYS L, 75(13), 1999, pp. 1914-1916
Effect of Te doping on step structure and ordering in GaInP
Authors: Lee, SH Fetzer, C Stringfellow, GB
Citation: Sh. Lee et al., Effect of Te doping on step structure and ordering in GaInP, J CRYST GR, 195(1-4), 1998, pp. 13-20
Risultati: 1-25 | 26-28