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Results: 1-16 |
Results: 16
EMISSIVE CHARACTERISTICS OF MESA-STRIPE LASERS (LAMBDA=3.0-3.6-MU-M) MADE FROM INGAASSB INASSBP DOUBLE HETEROSTRUCTURES/
Authors: AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., EMISSIVE CHARACTERISTICS OF MESA-STRIPE LASERS (LAMBDA=3.0-3.6-MU-M) MADE FROM INGAASSB INASSBP DOUBLE HETEROSTRUCTURES/, Technical physics letters, 24(6), 1998, pp. 472-474
LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY, Technical physics letters, 24(3), 1998, pp. 243-245
FIBEROPTIC DETECTOR USING A MIDINFRARED DIODE-LASER AND AN ACOUSTOOPTIC MODULATOR
Authors: ZOTOVA NV KARANDASHEV SA KULAKOVA LA MATVEEV BA MELEKH BT STUS NM TALALAKIN GN
Citation: Nv. Zotova et al., FIBEROPTIC DETECTOR USING A MIDINFRARED DIODE-LASER AND AN ACOUSTOOPTIC MODULATOR, Technical physics letters, 23(10), 1997, pp. 781-782
MESA STRIPE FOR THE 3-3.6 MU-M RANGE LASERS UTILIZING GADOLINIUM-DOPED INASSBP INGAASSB DOUBLE HETEROSTRUCTURES/
Authors: ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: Nv. Zotova et al., MESA STRIPE FOR THE 3-3.6 MU-M RANGE LASERS UTILIZING GADOLINIUM-DOPED INASSBP INGAASSB DOUBLE HETEROSTRUCTURES/, Technical physics letters, 23(1), 1997, pp. 41-42
MIDINFRARED (3-5 MU-M) LEDS AS SOURCES FOR GAS AND LIQUID SENSORS
Authors: MATVEEV BA GAVRILOV GA EVSTROPOV VV ZOTOVA NV KARANDASHOV SA SOTNIKOVA GY STUS NM TALALAKIN GN MALINEN J
Citation: Ba. Matveev et al., MIDINFRARED (3-5 MU-M) LEDS AS SOURCES FOR GAS AND LIQUID SENSORS, Sensors and actuators. B, Chemical, 39(1-3), 1997, pp. 339-343
MESA-BAND LASERS BASED ON INASSBP INGAASS B BHS ALLOYED BY GADOLINIUMIN THE 3-3.6-MU-M RANGE/
Authors: ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation: Nv. Zotova et al., MESA-BAND LASERS BASED ON INASSBP INGAASS B BHS ALLOYED BY GADOLINIUMIN THE 3-3.6-MU-M RANGE/, Pis'ma v Zurnal tehniceskoj fiziki, 23(1), 1997, pp. 72-76
TUNABLE MID-IR DIODE-LASERS BASED ON INGAASSB INASSBP DH/
Authors: ZOTOVA NV KARANDASHOV SA MATVEEV BA STUS NM TALALAKIN GN REMENNYI MA
Citation: Nv. Zotova et al., TUNABLE MID-IR DIODE-LASERS BASED ON INGAASSB INASSBP DH/, SPECT ACT A, 52(8), 1996, pp. 857-862
MIDWAVE (3-4 MU-M) INASSBP INGAASSB INFRARED DIODE-LASERS AS A SOURCEFOR GAS SENSORS/
Authors: AIDARALIEV M ZOTOVA NV KARANDASHOV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., MIDWAVE (3-4 MU-M) INASSBP INGAASSB INFRARED DIODE-LASERS AS A SOURCEFOR GAS SENSORS/, Infrared physics & technology, 37(1), 1996, pp. 83-86
PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M
Authors: MIKHAILOVA MP STUS NM SLOBODCHIKOV SV ZOTOVA HV MATVEEV BA TALALAKIN GN
Citation: Mp. Mikhailova et al., PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M, Semiconductors, 30(9), 1996, pp. 845-848
INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION
Authors: AIDARALIEV M BRESLER MS ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION, Semiconductors, 30(8), 1996, pp. 711-715
INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION
Authors: BRESLER MS GUSEV OB ZOTOVA NV AYDARALIEV M KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: Ms. Bresler et al., INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION, Optical materials, 6(1-2), 1996, pp. 111-116
RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/
Authors: BRESLER MS GUSEV OB AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS MN TALALAKIN GN
Citation: Ms. Bresler et al., RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/, Semiconductors, 29(2), 1995, pp. 108-112
RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/
Authors: AYDARALIEV M BRESLER MS GUSEV OB KARANDASHOV SA MATVEEV BA STUS MN TALALAKIN GN ZOTOVA NV
Citation: M. Aydaraliev et al., RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/, Semiconductor science and technology, 10(2), 1995, pp. 151-156
DISTRIBUTION OF DEFORMATION IN INASSBP-IN GAASSB BINARY HETEROSTRUCTURES
Authors: ARGUNOVA TS KYUTT RN MATVEEV BA RUVIMOV SS STUS NM TALALAKIN GN
Citation: Ts. Argunova et al., DISTRIBUTION OF DEFORMATION IN INASSBP-IN GAASSB BINARY HETEROSTRUCTURES, Fizika tverdogo tela, 36(10), 1994, pp. 3071-3078
LONG-WAVELENGTH LOW-THRESHOLD LASERS BASED ON III-V-COMPOUNDS
Authors: AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., LONG-WAVELENGTH LOW-THRESHOLD LASERS BASED ON III-V-COMPOUNDS, Semiconductors, 27(1), 1993, pp. 10-15
LOW-THRESHOLD LONG-WAVE LASERS (LAMBDA = 3.0-3.6 MU-M) BASED ON III-VALLOYS
Authors: AYDARALIEV M ZOTOVA NV KARANDASHOV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aydaraliev et al., LOW-THRESHOLD LONG-WAVE LASERS (LAMBDA = 3.0-3.6 MU-M) BASED ON III-VALLOYS, Semiconductor science and technology, 8(8), 1993, pp. 1575-1580
Risultati: 1-16 |