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Results: 1-11 |
Results: 11
PRECISE QUANTITATIVE-EVALUATION OF THE HOT-CARRIER-INDUCED DRAIN SERIES RESISTANCE DEGRADATION IN LATID-N-MOSFETS
Authors: WALTER GH WEBER W BREDERLOW R JURK R LINNENBANK CG SCHLUNDER C SCHMITTLANDSIEDEL D THEWES R
Citation: Gh. Walter et al., PRECISE QUANTITATIVE-EVALUATION OF THE HOT-CARRIER-INDUCED DRAIN SERIES RESISTANCE DEGRADATION IN LATID-N-MOSFETS, Microelectronics and reliability, 38(6-8), 1998, pp. 1063-1068
EXPERIMENTAL METHODS FOR INVESTIGATING THE DEFECT PROPERTIES OF SIO2 IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: WEBER W THEWES R
Citation: W. Weber et R. Thewes, EXPERIMENTAL METHODS FOR INVESTIGATING THE DEFECT PROPERTIES OF SIO2 IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of the Electrochemical Society, 145(10), 1998, pp. 3638-3646
EFFECTS OF HOT-CARRIER DEGRADATION IN ANALOG CMOS CIRCUITS
Authors: THEWES R WEBER W
Citation: R. Thewes et W. Weber, EFFECTS OF HOT-CARRIER DEGRADATION IN ANALOG CMOS CIRCUITS, Microelectronic engineering, 36(1-4), 1997, pp. 285-292
HOT-CARRIER DEGRADATION OF P-MOSFETS UNDER ANALOG OPERATION
Authors: THEWES R BROX M GOSER KF WEBER W
Citation: R. Thewes et al., HOT-CARRIER DEGRADATION OF P-MOSFETS UNDER ANALOG OPERATION, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 607-617
METHOD FOR PRECISE DETERMINATION OF THE STATISTICAL DISTRIBUTION OF THE INPUT OFFSET VOLTAGE OF DIFFERENTIAL STAGES
Authors: THEWES R SCHINDHELM T TIEBOUT M WOHLRAB E KOLLMER U KESSEL S SCHMITTLANDSIEDEL D WEBER W
Citation: R. Thewes et al., METHOD FOR PRECISE DETERMINATION OF THE STATISTICAL DISTRIBUTION OF THE INPUT OFFSET VOLTAGE OF DIFFERENTIAL STAGES, Microelectronics and reliability, 36(11-12), 1996, pp. 1823-1826
HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS - REPLY
Authors: WEBER W BROX M THEWES R SAKS NS
Citation: W. Weber et al., HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS - REPLY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1474-1477
ON THE APPLICATION OF THE NEURON MOS-TRANSISTOR PRINCIPLE FOR MODERN VLSI DESIGN
Authors: WEBER W PRANGE SJ THEWES R WOHLRAB E LUCK A
Citation: W. Weber et al., ON THE APPLICATION OF THE NEURON MOS-TRANSISTOR PRINCIPLE FOR MODERN VLSI DESIGN, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1700-1708
EVALUATION OF THE HOT-CARRIER-INDUCED OFFSET VOLTAGE OF DIFFERENTIAL PAIRS IN ANALOG CMOS CIRCUITS
Authors: THEWES R KIVI MJ GOSER KF WEBER W
Citation: R. Thewes et al., EVALUATION OF THE HOT-CARRIER-INDUCED OFFSET VOLTAGE OF DIFFERENTIAL PAIRS IN ANALOG CMOS CIRCUITS, Quality and reliability engineering international, 11(4), 1995, pp. 273-277
HOT-CARRIER-RELATED DEVICE RELIABILITY FOR DIGITAL AND ANALOG CMOS CIRCUITS
Authors: WEBER W THEWES R
Citation: W. Weber et R. Thewes, HOT-CARRIER-RELATED DEVICE RELIABILITY FOR DIGITAL AND ANALOG CMOS CIRCUITS, Semiconductor science and technology, 10(11), 1995, pp. 1432-1443
HOT-HOLE-INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS
Authors: WEBER W BROX M THEWES R SAKS NS
Citation: W. Weber et al., HOT-HOLE-INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1473-1480
HOT-CARRIER STRESS EFFECTS IN P-MOSFETS - PHYSICAL EFFECTS RELEVANT FOR CIRCUIT OPERATION
Authors: WEBER W BROX M VONSCHWERIN A THEWES R
Citation: W. Weber et al., HOT-CARRIER STRESS EFFECTS IN P-MOSFETS - PHYSICAL EFFECTS RELEVANT FOR CIRCUIT OPERATION, Microelectronic engineering, 22(1-4), 1993, pp. 253-260
Risultati: 1-11 |