AAAAAA

   
Results: 1-10 |
Results: 10
DESIGN AND TEST OF ELEMENTARY DIGITAL CIRCUITS BASED ON MONOLITHIC SOI JFETS
Authors: FOURCHES N ORSIER E DEPONTCHARRA JD TRUCHE R
Citation: N. Fourches et al., DESIGN AND TEST OF ELEMENTARY DIGITAL CIRCUITS BASED ON MONOLITHIC SOI JFETS, IEEE transactions on nuclear science, 45(1), 1998, pp. 41-49
THICK-FILM SOI TECHNOLOGY - CHARACTERISTICS OF DEVICES AND PERFORMANCE OF CIRCUITS FOR HIGH-ENERGY PHYSICS AT CRYOGENIC TEMPERATURES - EFFECTS OF IONIZING-RADIATION
Authors: FOURCHES N ABBON P CHIPAUX R DELAGNES E ORSIER E PAILLER P DEPONTCHARRA JD ROUGER M SUEUR M TRUCHE R
Citation: N. Fourches et al., THICK-FILM SOI TECHNOLOGY - CHARACTERISTICS OF DEVICES AND PERFORMANCE OF CIRCUITS FOR HIGH-ENERGY PHYSICS AT CRYOGENIC TEMPERATURES - EFFECTS OF IONIZING-RADIATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 401(2-3), 1997, pp. 229-237
CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS
Authors: FLAMENT O AUTRAN JL PAILLET P ROCHE P FAYNOT O TRUCHE R
Citation: O. Flament et al., CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1930-1938
ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS
Authors: FLAMENT O AUTRAN JL ROCHE P LERAY JL MUSSEAU O TRUCHE R ORSIER E
Citation: O. Flament et al., ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3060-3067
DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M ABBON P BORGEAUD P DELAGNES E FOURCHES N LACHARTRE D LUGIEZ F PAUL B ROUGER M TRUCHE R BLANC JP LEROUX C DELEVOYEORSIER E PELLOIE JL DEPONTCHARRA J FLAMENT O GUEBHARD JM LERAY JL MONTARON J MUSSEAU O VITEZ A BLANQUART L AUBERT JJ BONZOM V DELPIERRE P HABRARD MC MEKKAOUI A POTHEAU R ARDELEAN J HRISOHO A BRETON D
Citation: M. Dentan et al., DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1763-1767
ORIGIN OF MACROSCOPIC EFFECTS ON HARDENED MOSFET DEVICES FOLLOWING LOW-TEMPERATURE (90 K) IONIZING IRRADIATION
Authors: FOURCHES N DELAGNES E LEMEUR LP ORSIER E DEPONTCHARRA J TRUCHE R
Citation: N. Fourches et al., ORIGIN OF MACROSCOPIC EFFECTS ON HARDENED MOSFET DEVICES FOLLOWING LOW-TEMPERATURE (90 K) IONIZING IRRADIATION, Microelectronic engineering, 28(1-4), 1995, pp. 75-78
EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES
Authors: FLAMENT O LERAY JL MARTIN F ORSIER E PELLOIE JL TRUCHE R DEVINE RAB
Citation: O. Flament et al., EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1667-1673
STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY
Authors: BLANQUART L DELPIERRE P HABRARD MC MEKKAOUI A MOUTHUY T DENTAN M DELAGNES E FOURCHES N ROUGER M TRUCHE R DELEVOYE E DEPONTCHARRA J BLANC JP FLAMENT O LERAY JL MUSSEAU O
Citation: L. Blanquart et al., STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2525-2529
RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS
Authors: FLAMENT O LERAY JL MARTIN JL MONTARON J RAFFAELLI M BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONCHARRA J TRUCHE R DELAGNES E DENTAN M FOURCHES N
Citation: O. Flament et al., RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS, IEEE transactions on nuclear science, 41(3), 1994, pp. 565-571
STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M DELAGNES E FOURCHES N ROUGER M HABRARD MC BLANQUART L DELPIERRE P POTHEAU R TRUCHE R BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONTCHARRA J FLAMENT O LERAY JL MARTIN JL MONTARON J MUSSEAU O
Citation: M. Dentan et al., STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1555-1560
Risultati: 1-10 |