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Results:
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Results: 13
Authors:
Auer, U
Prost, W
Agethen, M
Tegude, FJ
Duschl, R
Eberl, K
Citation: U. Auer et al., Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes, IEEE ELEC D, 22(5), 2001, pp. 215-217
Authors:
Keiper, D
Velling, P
Prost, W
Agethen, M
Tegude, FJ
Landgren, G
Citation: D. Keiper et al., Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient, JPN J A P 1, 39(11), 2000, pp. 6162-6165
Authors:
Pacha, C
Auer, U
Burwick, C
Glosekotter, P
Brennemann, A
Prost, W
Tegude, FJ
Goser, KF
Citation: C. Pacha et al., Threshold logic circuit design of parallel adders using resonant tunnelingdevices, IEEE VLSI, 8(5), 2000, pp. 558-572
Authors:
Pacha, C
Kessler, O
Glosekotter, P
Goser, KF
Prost, W
Brennemann, A
Auer, U
Tegude, FJ
Citation: C. Pacha et al., Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic, ANALOG IN C, 24(1), 2000, pp. 7-25
Authors:
Prost, W
Auer, U
Tegude, FJ
Pacha, C
Goser, KF
Janssen, G
van der Roer, T
Citation: W. Prost et al., Manufacturability and robust design of nanoelectronic logic circuits basedon resonant tunnelling diodes, INT J CIRCU, 28(6), 2000, pp. 537-552
Authors:
Berntgen, J
Behres, A
Kluth, J
Heime, K
Daumann, W
Auer, U
Tegude, FJ
Citation: J. Berntgen et al., Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates, MICROEL REL, 40(11), 2000, pp. 1911-1914
Authors:
Velling, P
Agethen, M
Prost, W
Tegude, FJ
Citation: P. Velling et al., InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources, J CRYST GR, 221, 2000, pp. 722-729
Authors:
Spieler, J
Kippenberg, T
Krauss, J
Kiesel, P
Dohler, GH
Velling, P
Prost, W
Tegude, FJ
Citation: J. Spieler et al., Electro-optical examination of the band structure of ordered InGaAs, APPL PHYS L, 76(1), 2000, pp. 88-90
Authors:
Hilburger, U
Fix, W
Mayer, R
Geisselbrecht, W
Malzer, S
Velling, P
Prost, W
Tegude, FJ
Dohler, GH
Citation: U. Hilburger et al., Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures, J CRYST GR, 202, 1999, pp. 574-577
Authors:
Berntgen, J
Heime, K
Daumann, W
Auer, U
Tegude, FJ
Matulionis, A
Citation: J. Berntgen et al., The 1/f noise of InP based 2DEG devices and its dependence on mobility, IEEE DEVICE, 46(1), 1999, pp. 194-203
Authors:
Velling, P
Janssen, G
Agethen, M
Prost, W
Tegude, FJ
Citation: P. Velling et al., InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport, J CRYST GR, 195(1-4), 1998, pp. 117-123
Authors:
Velling, P
Fix, W
Geisselbrecht, W
Prost, W
Dohler, GH
Tegude, FJ
Citation: P. Velling et al., InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth, J CRYST GR, 195(1-4), 1998, pp. 490-494
Authors:
Velling, P
Janssen, G
Auer, U
Prost, W
Tegude, FJ
Citation: P. Velling et al., NAND/NOR logic circuit using single InP-based RTBT, ELECTR LETT, 34(25), 1998, pp. 2390-2392
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