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Results: 1-25 | 26-50 | 51-52
Results: 26-50/52
Preparation and properties of stoichiometric vanadium oxides
Authors: Abdullaev, MA Kamilov, IK Terukov, EI
Citation: Ma. Abdullaev et al., Preparation and properties of stoichiometric vanadium oxides, INORG MATER, 37(3), 2001, pp. 271-273
The ablation threshold in amorphous diamondlike carbon films exposed to anArF excimer laser radiation
Authors: Kaliteevskaya, NA Kon'kov, OI Terukov, EI Seisyan, RP
Citation: Na. Kaliteevskaya et al., The ablation threshold in amorphous diamondlike carbon films exposed to anArF excimer laser radiation, TECH PHYS L, 26(12), 2000, pp. 1032-1033
Superluminescence of Er3+ in an amorphous silicon matrix
Authors: Emel'yanov, VI Kamenev, BV Kashkarov, PK Konstantinova, EI Timoshenko, VY Terukov, EI Bresler, MS Gusev, OB
Citation: Vi. Emel'Yanov et al., Superluminescence of Er3+ in an amorphous silicon matrix, PHYS SOL ST, 42(8), 2000, pp. 1410-1413
Nonlinear absorption of a picosecond pulse in a-Si : H
Authors: Bugaev, AA Kon'kov, OI Terukov, EI
Citation: Aa. Bugaev et al., Nonlinear absorption of a picosecond pulse in a-Si : H, PHYS SOL ST, 42(2), 2000, pp. 241-243
Photovoltaic effect in a-Si : H/n-InSe heterostructures
Authors: Bekimbetov, RN Nikolaev, YA Rud', VY Rud', YV Terukov, EI
Citation: Rn. Bekimbetov et al., Photovoltaic effect in a-Si : H/n-InSe heterostructures, SEMICONDUCT, 34(9), 2000, pp. 1064-1067
Polarization photosensitivity of a-Si : H/c-Si heterojunctions
Authors: Nikolaev, YA Rud', VY Rud', YV Terukov, EI
Citation: Ya. Nikolaev et al., Polarization photosensitivity of a-Si : H/c-Si heterojunctions, SEMICONDUCT, 34(7), 2000, pp. 790-793
The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition
Authors: Terukov, EI Kazanin, MM Kon'kov, OI Kudoyarova, VK Kougiya, KV Nikulin, YA Kazanskii, AG
Citation: Ei. Terukov et al., The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition, SEMICONDUCT, 34(7), 2000, pp. 829-834
Photoelectric phenomena in a-Si : H/p-CuInSe2 heterostructures
Authors: Nikolaev, YA Rud', VY Rud', YV Terukov, EI
Citation: Ya. Nikolaev et al., Photoelectric phenomena in a-Si : H/p-CuInSe2 heterostructures, SEMICONDUCT, 34(6), 2000, pp. 658-661
Photosensitivity of a-Si : H/n-InSe heterocontacts
Authors: Nikolaev, YA Rud', VY Rud', YV Terukov, EI
Citation: Ya. Nikolaev et al., Photosensitivity of a-Si : H/n-InSe heterocontacts, SEMICONDUCT, 34(6), 2000, pp. 677-679
Current-voltage characteristics of electroluminescent Me/(a-Si : H): Er/c-Si structures prepared by magnetron sputtering
Authors: Ivanov, PA Kon'kov, OI Terukov, EI
Citation: Pa. Ivanov et al., Current-voltage characteristics of electroluminescent Me/(a-Si : H): Er/c-Si structures prepared by magnetron sputtering, SEMICONDUCT, 34(5), 2000, pp. 598-602
Structure and properties of a-Si : H films grown by cyclic deposition
Authors: Afanas'ev, VP Gudovskikh, AS Kon'kov, OI Kazanin, MM Kougiya, KV Sazanov, AP Trapeznikova, IN Terukov, EI
Citation: Vp. Afanas'Ev et al., Structure and properties of a-Si : H films grown by cyclic deposition, SEMICONDUCT, 34(4), 2000, pp. 477-480
Absorption and photoconductivity of boron-compensated mu c-Si : H
Authors: Kazanskii, AG Mell, H Terukov, EI Forsh, PA
Citation: Ag. Kazanskii et al., Absorption and photoconductivity of boron-compensated mu c-Si : H, SEMICONDUCT, 34(3), 2000, pp. 367-369
Energy distribution of localized states in amorphous hydrogenated silicon
Authors: Kougiya, KV Terukov, EI Trapeznikova, IN
Citation: Kv. Kougiya et al., Energy distribution of localized states in amorphous hydrogenated silicon, SEMICONDUCT, 34(1), 2000, pp. 81-86
The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon
Authors: Terukov, EI Kudoyarova, VK Kon'kov, OI Konstantinova, EA Kamenev, BV Timoshenko, VY
Citation: Ei. Terukov et al., The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon, SEMICONDUCT, 34(1), 2000, pp. 92-94
Amorphous carbon: how much of free hydrogen?
Authors: Kapitonov, IN Konkov, OI Terukov, EI Trapeznikova, IN
Citation: In. Kapitonov et al., Amorphous carbon: how much of free hydrogen?, DIAM RELAT, 9(3-6), 2000, pp. 707-710
The influence of deposition parameters on the structure of nanocrystallinesilicon
Authors: Terukov, EI Kudoyarova, VK Davydov, VY Koughia, KV Weiser, G Mell, H
Citation: Ei. Terukov et al., The influence of deposition parameters on the structure of nanocrystallinesilicon, MAT SCI E B, 69, 2000, pp. 266-271
Erbium incorporation in plasma-deposited amorphous silicon
Authors: Terukov, EI Konkov, OI Kudoyarova, VK Koughia, KV Weiser, G Kuhne, H Kleider, JP Longeaud, C Bruggemann, R
Citation: Ei. Terukov et al., Erbium incorporation in plasma-deposited amorphous silicon, J NON-CRYST, 266, 2000, pp. 614-618
Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon
Authors: Bresler, MS Gusev, OB Sobolev, NA Terukov, EI Yassievich, IN Zakharchenya, BP Gregorkevich, T
Citation: Ms. Bresler et al., Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon, PHYS SOL ST, 41(5), 1999, pp. 770-773
Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization
Authors: Gusev, OB Bresler, MS Zakharchenya, BP Kuznetsov, AN Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ob. Gusev et al., Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization, PHYS SOL ST, 41(2), 1999, pp. 185-191
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
Authors: Bresler, MS Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of erbium electroluminescence in hydrogenated amorphous silicon, SEMICONDUCT, 33(6), 1999, pp. 622-623
Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge
Authors: Terukov, EI Kon'kov, OI Kudoyarova, VK Gusev, OB Weiser, G Kuehne, H
Citation: Ei. Terukov et al., Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge, SEMICONDUCT, 33(2), 1999, pp. 177-179
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon
Authors: Mezdrogina, MM Annaorazova, MP Terukov, EI Trapeznikova, IN Nazarov, N
Citation: Mm. Mezdrogina et al., Formation of optically active centers in films of erbium-doped amorphous hydrated silicon, SEMICONDUCT, 33(10), 1999, pp. 1145-1148
Mechanism of excitation of erbium electroluminescence in amorphous silicon
Authors: Bresler, MS Fuhs, W Gregorkiewicz, T Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of excitation of erbium electroluminescence in amorphous silicon, PHYSICA B, 274, 1999, pp. 354-357
Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon
Authors: Kuhne, H Weiser, G Terukov, EI Kusnetsov, AN Kudoyarova, VK
Citation: H. Kuhne et al., Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon, J APPL PHYS, 86(2), 1999, pp. 896-901
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films
Authors: Kudoyarova, VK Kuznetsov, AN Terukov, EI Gusev, OB Kudryavtsev, YA Ber, BY Gusinskii, GM Fuhs, W Weiser, G Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
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