Authors:
Sakharov, AV
Usikov, AS
Lundin, WV
Tsatsulnikov, AF
Tu, RC
Yin, SB
Chi, JY
Citation: Av. Sakharov et al., Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences, PHYS ST S-B, 228(1), 2001, pp. 95-98
Authors:
Polyakov, AY
Smirnov, NB
Govorkov, AV
Usikov, AS
Shmidt, NM
Lundin, WV
Citation: Ay. Polyakov et al., Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire, SOL ST ELEC, 45(2), 2001, pp. 255-259
Authors:
Polyakov, AY
Smirnov, NB
Govorkov, AV
Usikov, AS
Shmidt, NM
Pushnyi, BV
Tsvetkov, DV
Stepanov, SI
Dmitriev, VA
Mil'vidskii, MG
Pavlov, VF
Citation: Ay. Polyakov et al., Deep centers and persistent photoconductivity studies in variously grown GaN films, MRS I J N S, 5, 2000, pp. NIL_798-NIL_803
Authors:
Krestnikov, IL
Sakharov, AV
Lundin, WV
Musikhin, YG
Kartashova, AP
Usikov, AS
Tsatsul'nikov, AF
Ledentsov, NN
Alferov, ZI
Soshnikov, IP
Hahn, E
Neubauer, B
Rosenauer, A
Litvinov, D
Gerthsen, D
Plaut, AC
Hoffmann, AA
Bimberg, D
Citation: Il. Krestnikov et al., Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots, SEMICONDUCT, 34(4), 2000, pp. 481-487
Authors:
Usikov, AS
Tret'yakov, VV
Bobyl', AV
Kyutt, RN
Lundin, WV
Pushnyi, BV
Shmidt, NM
Citation: As. Usikov et al., Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire, SEMICONDUCT, 34(11), 2000, pp. 1248-1254
Authors:
Efimov, AN
Lebedev, AO
Lundin, VV
Usikov, AS
Citation: An. Efimov et al., On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate, CRYSTALLO R, 45(2), 2000, pp. 312-317
Authors:
Tsatsul'nikov, AF
Krestnikov, IL
Lundin, WV
Sakharov, AV
Kartashova, AP
Usikov, AS
Alferov, ZI
Ledentsov, NN
Strittmatter, A
Hoffmann, A
Bimberg, D
Soshnikov, IP
Litvinov, D
Rosenauer, A
Gerthsen, D
Plaut, A
Citation: Af. Tsatsul'Nikov et al., Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition, SEMIC SCI T, 15(7), 2000, pp. 766-769
Authors:
Ledentsov, NN
Krestnikov, IL
Strassburg, M
Engelhardt, R
Rodt, S
Heitz, R
Pohl, UW
Hoffmann, A
Bimberg, D
Sakharov, AV
Lundin, WV
Usikov, AS
Alferov, ZI
Litvinov, D
Rosenauer, A
Gerthsen, D
Citation: Nn. Ledentsov et al., Quantum dots formed by ultrathin insertions in wide-gap matrices, THIN SOL FI, 367(1-2), 2000, pp. 40-47
Authors:
Polyakov, AY
Usikov, AS
Theys, B
Smirnov, NB
Govorkov, AV
Jomard, F
Shmidt, NM
Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Authors:
Krestnikov, IL
Sakharov, AV
Lundin, WV
Usikov, AS
Tsatsulnikov, AF
Ledentsov, NN
Alferov, ZI
Soshnikov, IP
Gerthsen, D
Plaut, AC
Holst, J
Hoffmann, A
Bimberg, D
Citation: Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96
Authors:
Tretyakov, VV
Rukolaine, SA
Usikov, AS
Makarov, SV
Citation: Vv. Tretyakov et al., Investigation of inhomogeneites in epitaxial AlxGa1-xN layers grown on sapphire, MIKROCH ACT, 132(2-4), 2000, pp. 361-364
Authors:
Sakharov, AV
Lundin, VV
Semenov, VA
Usikov, AS
Ledentsov, NN
Tsatsul'nikov, AF
Baidakova, MV
Citation: Av. Sakharov et al., Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures, TECH PHYS L, 25(6), 1999, pp. 462-465
Authors:
Usikov, AS
Tret'yakov, VV
Lundin, VV
Zadiranov, YM
Pushnyi, BV
Konnikov, SG
Citation: As. Usikov et al., Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence, TECH PHYS L, 25(4), 1999, pp. 253-256
Authors:
Sidorov, VG
Drizhuk, AG
Shagalov, MD
Sidorov, DV
Usikov, AS
Citation: Vg. Sidorov et al., Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching, TECH PHYS L, 25(1), 1999, pp. 65-66
Authors:
Tsatsul'nikov, AF
Ber, BY
Kartashova, AP
Kudryavtsev, YA
Ledentsov, NN
Lundin, VV
Maksimov, MV
Sakharov, AV
Usikov, AS
Alferov, ZI
Hoffmann, A
Citation: Af. Tsatsul'Nikov et al., Investigation of MOVPE-grown GaN layers doped with As atoms, SEMICONDUCT, 33(7), 1999, pp. 728-730
Authors:
Davydov, VY
Lundin, VV
Smirnov, AN
Sobolev, NA
Usikov, AS
Emel'yanov, AM
Makoviichuk, MI
Parshin, EO
Citation: Vy. Davydov et al., Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mu m, SEMICONDUCT, 33(1), 1999, pp. 1-5
Authors:
Shmidt, NM
Lebedev, AV
Lundin, WV
Pushnyi, BV
Ratnikov, VV
Shubina, TV
Tsatsul'nikov, AA
Usikov, AS
Pozina, G
Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Authors:
Sakharov, AV
Lundin, WV
Krestnikov, IL
Semenov, VA
Usikov, AS
Tsatsulnikov, AF
Musikhin, YG
Baidakova, MV
Alferov, ZI
Ledentsov, NN
Holst, J
Hoffmann, A
Bimberg, D
Soshnikov, IP
Gerthsen, D
Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440