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Results: 1-25 | 26-33
Results: 1-25/33
Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
Authors: Sakharov, AV Usikov, AS Lundin, WV Tsatsulnikov, AF Tu, RC Yin, SB Chi, JY
Citation: Av. Sakharov et al., Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences, PHYS ST S-B, 228(1), 2001, pp. 95-98
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire, SOL ST ELEC, 45(2), 2001, pp. 255-259
Fermi level dependence of hydrogen diffusivity in GaN
Authors: Polyakov, AY Smirnov, NB Pearton, SJ Ren, F Theys, B Jomard, F Teukam, Z Dmitriev, VA Nikolaev, AE Usikov, AS Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
Deep centers and persistent photoconductivity studies in variously grown GaN films
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Pushnyi, BV Tsvetkov, DV Stepanov, SI Dmitriev, VA Mil'vidskii, MG Pavlov, VF
Citation: Ay. Polyakov et al., Deep centers and persistent photoconductivity studies in variously grown GaN films, MRS I J N S, 5, 2000, pp. NIL_798-NIL_803
Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix
Authors: Soshnikov, IP Lundin, VV Usikov, AS Kalmykova, IP Ledentsov, NN Rosenauer, A Neubauer, B Gerthsen, D
Citation: Ip. Soshnikov et al., Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix, SEMICONDUCT, 34(6), 2000, pp. 621-625
Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Musikhin, YG Kartashova, AP Usikov, AS Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Hahn, E Neubauer, B Rosenauer, A Litvinov, D Gerthsen, D Plaut, AC Hoffmann, AA Bimberg, D
Citation: Il. Krestnikov et al., Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots, SEMICONDUCT, 34(4), 2000, pp. 481-487
Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire
Authors: Usikov, AS Tret'yakov, VV Bobyl', AV Kyutt, RN Lundin, WV Pushnyi, BV Shmidt, NM
Citation: As. Usikov et al., Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire, SEMICONDUCT, 34(11), 2000, pp. 1248-1254
Nanorelief of a GaN surface: The effect of sulfide treatment
Authors: Bessolov, VN Zhilyaev, YV Zavarin, EE Kompan, ME Konenkova, EV Usikov, AS Fedirko, VA
Citation: Vn. Bessolov et al., Nanorelief of a GaN surface: The effect of sulfide treatment, SEMICONDUCT, 34(11), 2000, pp. 1301-1304
On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
Authors: Efimov, AN Lebedev, AO Lundin, VV Usikov, AS
Citation: An. Efimov et al., On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate, CRYSTALLO R, 45(2), 2000, pp. 312-317
Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
Authors: Tsatsul'nikov, AF Krestnikov, IL Lundin, WV Sakharov, AV Kartashova, AP Usikov, AS Alferov, ZI Ledentsov, NN Strittmatter, A Hoffmann, A Bimberg, D Soshnikov, IP Litvinov, D Rosenauer, A Gerthsen, D Plaut, A
Citation: Af. Tsatsul'Nikov et al., Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition, SEMIC SCI T, 15(7), 2000, pp. 766-769
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Quantum dots formed by ultrathin insertions in wide-gap matrices
Authors: Ledentsov, NN Krestnikov, IL Strassburg, M Engelhardt, R Rodt, S Heitz, R Pohl, UW Hoffmann, A Bimberg, D Sakharov, AV Lundin, WV Usikov, AS Alferov, ZI Litvinov, D Rosenauer, A Gerthsen, D
Citation: Nn. Ledentsov et al., Quantum dots formed by ultrathin insertions in wide-gap matrices, THIN SOL FI, 367(1-2), 2000, pp. 40-47
Effects of proton implantation on electrical and recombination properties of n-GaN
Authors: Polyakov, AY Usikov, AS Theys, B Smirnov, NB Govorkov, AV Jomard, F Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Lasing in vertical direction in structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Usikov, AS Tsatsulnikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Gerthsen, D Plaut, AC Holst, J Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96
Investigation of inhomogeneites in epitaxial AlxGa1-xN layers grown on sapphire
Authors: Tretyakov, VV Rukolaine, SA Usikov, AS Makarov, SV
Citation: Vv. Tretyakov et al., Investigation of inhomogeneites in epitaxial AlxGa1-xN layers grown on sapphire, MIKROCH ACT, 132(2-4), 2000, pp. 361-364
Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures
Authors: Sakharov, AV Lundin, VV Semenov, VA Usikov, AS Ledentsov, NN Tsatsul'nikov, AF Baidakova, MV
Citation: Av. Sakharov et al., Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures, TECH PHYS L, 25(6), 1999, pp. 462-465
Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
Authors: Usikov, AS Tret'yakov, VV Lundin, VV Zadiranov, YM Pushnyi, BV Konnikov, SG
Citation: As. Usikov et al., Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence, TECH PHYS L, 25(4), 1999, pp. 253-256
Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching
Authors: Sidorov, VG Drizhuk, AG Shagalov, MD Sidorov, DV Usikov, AS
Citation: Vg. Sidorov et al., Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching, TECH PHYS L, 25(1), 1999, pp. 65-66
Investigation of MOVPE-grown GaN layers doped with As atoms
Authors: Tsatsul'nikov, AF Ber, BY Kartashova, AP Kudryavtsev, YA Ledentsov, NN Lundin, VV Maksimov, MV Sakharov, AV Usikov, AS Alferov, ZI Hoffmann, A
Citation: Af. Tsatsul'Nikov et al., Investigation of MOVPE-grown GaN layers doped with As atoms, SEMICONDUCT, 33(7), 1999, pp. 728-730
Effect of annealing on the optical and structural properties of GaN : Er
Authors: Sobolev, NA Lundin, VV Sakharov, VI Serenkov, IT Usikov, AS Emel'yanov, AM
Citation: Na. Sobolev et al., Effect of annealing on the optical and structural properties of GaN : Er, SEMICONDUCT, 33(6), 1999, pp. 624-626
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mu m
Authors: Davydov, VY Lundin, VV Smirnov, AN Sobolev, NA Usikov, AS Emel'yanov, AM Makoviichuk, MI Parshin, EO
Citation: Vy. Davydov et al., Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mu m, SEMICONDUCT, 33(1), 1999, pp. 1-5
Effect of Si doping on structural, photoluminescence and electrical properties of GaN
Authors: Shmidt, NM Lebedev, AV Lundin, WV Pushnyi, BV Ratnikov, VV Shubina, TV Tsatsul'nikov, AA Usikov, AS Pozina, G Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Behavior of electrically active point defects in irradiated MOCVD n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS
Citation: Vv. Emtsev et al., Behavior of electrically active point defects in irradiated MOCVD n-GaN, PHYSICA B, 274, 1999, pp. 101-104
Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsulnikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Holst, J Hoffmann, A Bimberg, D Soshnikov, IP Gerthsen, D
Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440
Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature
Authors: Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsulnikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature, PHYS ST S-B, 216(1), 1999, pp. 511-515
Risultati: 1-25 | 26-33