AAAAAA

   
Results: 1-20 |
Results: 20
ON THE ANOMALOUS BEHAVIOR OF THE RELATIVE AMPLITUDE OF RTS NOISE
Authors: VANDAMME LKJ SODINI D GINGL Z
Citation: Lkj. Vandamme et al., ON THE ANOMALOUS BEHAVIOR OF THE RELATIVE AMPLITUDE OF RTS NOISE, Solid-state electronics, 42(6), 1998, pp. 901-905
LOW-FREQUENCY NOISE-ANALYSIS AS A DIAGNOSTIC-TOOL TO ASSESS THE QUALITY OF 0.25-MU-M TI-SILICIDED POLY LINES
Authors: VANDAMME EP DEWOLF I LAUWERS A VANDAMME LKJ
Citation: Ep. Vandamme et al., LOW-FREQUENCY NOISE-ANALYSIS AS A DIAGNOSTIC-TOOL TO ASSESS THE QUALITY OF 0.25-MU-M TI-SILICIDED POLY LINES, Microelectronics and reliability, 38(6-8), 1998, pp. 925-929
CHANGE IN DC AND L F NOISE CHARACTERISTICS OF N-SUBMICRON MOSFETS DUETO HOT-CARRIER DEGRADATION/
Authors: VANDAMME LKJ LI X
Citation: Lkj. Vandamme et X. Li, CHANGE IN DC AND L F NOISE CHARACTERISTICS OF N-SUBMICRON MOSFETS DUETO HOT-CARRIER DEGRADATION/, Microelectronics and reliability, 38(1), 1998, pp. 29-35
UNCERTAINTY IN GAUSSIAN-NOISE GENERALIZED FOR CROSS-CORRELATION SPECTRA
Authors: BRIAIRE J VANDAMME LKJ
Citation: J. Briaire et Lkj. Vandamme, UNCERTAINTY IN GAUSSIAN-NOISE GENERALIZED FOR CROSS-CORRELATION SPECTRA, Journal of applied physics, 84(8), 1998, pp. 4370-4374
1 F NOISE IN MAGNETIC NI80FE20 SINGLE LAYERS AND NI80FE20/CU MULTILAYERS/
Authors: GIJS MAM GIESBERS JB BELIEN J VANEST JW BRIAIRE P VANDAMME LKJ
Citation: Mam. Gijs et al., 1 F NOISE IN MAGNETIC NI80FE20 SINGLE LAYERS AND NI80FE20/CU MULTILAYERS/, Journal of magnetism and magnetic materials, 165(1-3), 1997, pp. 360-362
IMPACT OF SILICON SUBSTRATE, IRON CONTAMINATION AND PERIMETER ON SATURATION CURRENT AND NOISE IN N(+)P DIODES
Authors: VANDAMME LKJ VANDAMME EP DOBBELSTEEN JJ
Citation: Lkj. Vandamme et al., IMPACT OF SILICON SUBSTRATE, IRON CONTAMINATION AND PERIMETER ON SATURATION CURRENT AND NOISE IN N(+)P DIODES, Solid-state electronics, 41(6), 1997, pp. 901-908
LOW-FREQUENCY NOISE IN A HYBRID PHOTOMULTIPLIER TUBE
Authors: HERVE PJL VANDAMME LKJ REN L
Citation: Pjl. Herve et al., LOW-FREQUENCY NOISE IN A HYBRID PHOTOMULTIPLIER TUBE, Solid-state electronics, 41(5), 1997, pp. 663-668
RESISTANCE NOISE MEASUREMENT - A BETTER DIAGNOSTIC-TOOL TO DETECT STRESS AND CURRENT-INDUCED DEGRADATION
Authors: VANDAMME LKJ VANKEMENADE AJ
Citation: Lkj. Vandamme et Aj. Vankemenade, RESISTANCE NOISE MEASUREMENT - A BETTER DIAGNOSTIC-TOOL TO DETECT STRESS AND CURRENT-INDUCED DEGRADATION, Microelectronics and reliability, 37(1), 1997, pp. 87-93
DIAGNOSTICS OF THE QUALITY OF MOSFETS
Authors: VANDAMME EP VANDAMME LKJ
Citation: Ep. Vandamme et Lkj. Vandamme, DIAGNOSTICS OF THE QUALITY OF MOSFETS, Microelectronics and reliability, 36(7-8), 1996, pp. 1107-1112
1 F NOISE IN MAGNETIC NI80FE20 SINGLE LAYERS AND NI80FE20/CU MULTILAYERS/
Authors: GIJS MAM GIESBERS JB VANEST JW BRIAIRE J VANDAMME LKJ BELIEN P
Citation: Mam. Gijs et al., 1 F NOISE IN MAGNETIC NI80FE20 SINGLE LAYERS AND NI80FE20/CU MULTILAYERS/, Journal of applied physics, 80(4), 1996, pp. 2539-2541
NOISE IN DMOS TRANSISTORS IN A BICMOS-TECHNOLOGY
Authors: VANLANGEVELDE R BLIECK S VANDAMME LKJ
Citation: R. Vanlangevelde et al., NOISE IN DMOS TRANSISTORS IN A BICMOS-TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1243-1250
IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS
Authors: VANDAMME EP VANDAMME LKJ CLAEYS C SIMOEN E SCHREUTELKAMP RJ
Citation: Ep. Vandamme et al., IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS, Solid-state electronics, 38(11), 1995, pp. 1893-1897
EMPIRICAL TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF SEMICONDUCTORS
Authors: HERVE PJL VANDAMME LKJ
Citation: Pjl. Herve et Lkj. Vandamme, EMPIRICAL TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF SEMICONDUCTORS, Journal of applied physics, 77(10), 1995, pp. 5476-5477
GENERAL RELATION BETWEEN REFRACTIVE-INDEX AND ENERGY-GAP IN SEMICONDUCTORS
Authors: HERVE P VANDAMME LKJ
Citation: P. Herve et Lkj. Vandamme, GENERAL RELATION BETWEEN REFRACTIVE-INDEX AND ENERGY-GAP IN SEMICONDUCTORS, Infrared physics & technology, 35(4), 1994, pp. 609-615
1 F AND G-R NOISE IN ALGAAS EPITAXIAL LAYERS
Authors: PASCAL F DEMURCIA M LECOY G VANDAMME LKJ
Citation: F. Pascal et al., 1 F AND G-R NOISE IN ALGAAS EPITAXIAL LAYERS, Solid-state electronics, 37(8), 1994, pp. 1503-1508
PARAMETER EXTRACTION AND 1 F NOISE IN A SURFACE AND A BULK-TYPE, P-CHANNEL LDD MOSFET/
Authors: LI XS BARROS C VANDAMME EP VANDAMME LKJ
Citation: Xs. Li et al., PARAMETER EXTRACTION AND 1 F NOISE IN A SURFACE AND A BULK-TYPE, P-CHANNEL LDD MOSFET/, Solid-state electronics, 37(11), 1994, pp. 1853-1862
1 F NOISE IN MOS DEVICES, MOBILITY OR NUMBER FLUCTUATIONS/
Authors: VANDAMME LKJ LI XS RIGAUD D
Citation: Lkj. Vandamme et al., 1 F NOISE IN MOS DEVICES, MOBILITY OR NUMBER FLUCTUATIONS/, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 1936-1945
NOISE AS A DIAGNOSTIC-TOOL FOR QUALITY AND RELIABILITY OF ELECTRONIC DEVICES
Authors: VANDAMME LKJ
Citation: Lkj. Vandamme, NOISE AS A DIAGNOSTIC-TOOL FOR QUALITY AND RELIABILITY OF ELECTRONIC DEVICES, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2176-2187
1 F NOISE IN THE EXTINCTION COEFFICIENT OF AN OPTICAL-FIBER/
Authors: VANKEMENADE AJ HERVE P VANDAMME LKJ
Citation: Aj. Vankemenade et al., 1 F NOISE IN THE EXTINCTION COEFFICIENT OF AN OPTICAL-FIBER/, Electronics Letters, 30(16), 1994, pp. 1338-1339
AN EXPLANATION OF 1 F NOISE IN LDD MOSFETS FROM THE OHMIC REGION TO SATURATION/
Authors: LI XS VANDAMME LKJ
Citation: Xs. Li et Lkj. Vandamme, AN EXPLANATION OF 1 F NOISE IN LDD MOSFETS FROM THE OHMIC REGION TO SATURATION/, Solid-state electronics, 36(11), 1993, pp. 1515-1521
Risultati: 1-20 |