AAAAAA
Results:
1-15
|
Results: 15
Authors:
GLUCHE P
LEUNER R
VESCAN A
EBERT W
KOHN E
REMBE C
DERWIESCHE S
HOFER EP
Citation: P. Gluche et al., ACTUATOR SENSOR TECHNOLOGY ON ELECTRONIC GRADE DIAMOND FILMS, Microsystem technologies, 5(1), 1998, pp. 38-43
Authors:
GLUCHE P
ADAMSCHIK M
VESCAN A
EBERT W
SZUCS F
FECHT HJ
FLOTER A
ZACHAI R
KOHN E
Citation: P. Gluche et al., APPLICATION OF HIGHLY ORIENTED, PLANAR DIAMOND (HOD) FILMS OF HIGH MECHANICAL STRENGTH IN SENSOR TECHNOLOGIES, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 779-782
Authors:
VESCAN A
DAUMILLER I
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF DIAMOND SCHOTTKY DIODE, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 581-584
Authors:
EBERT W
VESCAN A
GLUCHE P
BORST T
KOHN E
Citation: W. Ebert et al., HIGH-VOLTAGE SCHOTTKY DIODE ON EPITAXIAL DIAMOND LAYER, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 329-332
Authors:
VESCAN A
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF PULSE-DOPED DIAMOND MESFET, IEEE electron device letters, 18(5), 1997, pp. 222-224
Authors:
GLUCHE P
ALEKSOV A
VESCAN A
EBERT W
KOHN E
Citation: P. Gluche et al., DIAMOND SURFACE-CHANNEL FET STRUCTURE WITH 200 V BREAKDOWN VOLTAGE, IEEE electron device letters, 18(11), 1997, pp. 547-549
Authors:
VESCAN A
DAUMILLER I
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., VERY HIGH-TEMPERATURE OPERATION OF DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 18(11), 1997, pp. 556-558
Authors:
LIANG HC
VESCAN A
KOHN E
CHIN KK
Citation: Hc. Liang et al., MEASUREMENT OF STRESS IN A SYNTHETIC DIAMOND SUBSTRATE USING THE PHOTOELASTIC METHOD, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 664-668
Authors:
VESCAN A
EBERT W
BORST TH
KOHN E
Citation: A. Vescan et al., ELECTRICAL CHARACTERIZATION OF DIAMOND RESISTORS ETCHED BY RIE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 747-751
Authors:
GLUCHE P
WOLTER SD
BORST TH
EBERT W
VESCAN A
KOHN E
Citation: P. Gluche et al., HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE, IEEE electron device letters, 17(6), 1996, pp. 270-272
Authors:
VESCAN A
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., SELECTIVELY GROWN OHMIC CONTACTS TO DELTA-DOPED DIAMOND FILMS, Electronics Letters, 32(15), 1996, pp. 1419-1421
Authors:
WOLTER SD
BORST TH
VESCAN A
KOHN E
Citation: Sd. Wolter et al., THE NUCLEATION OF HIGHLY ORIENTED DIAMOND ON SILICON VIA AN ALTERNATING-CURRENT SUBSTRATE BIAS, Applied physics letters, 68(25), 1996, pp. 3558-3560
Authors:
VESCAN A
EBERT W
BORST T
KOHN E
Citation: A. Vescan et al., I V CHARACTERISTICS OF EPITAXIAL SCHOTTKY AU BARRIER DIODE ON P(+) DIAMOND SUBSTRATE/, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 661-665
Authors:
EBERT W
VESCAN A
KOHN E
Citation: W. Ebert et al., GENERAL DIAMOND SCHOTTKY-BARRIER DIODE MODEL FROM LOCUS DIAGRAM ANALYSIS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 887-890
Authors:
EBERT W
VESCAN A
BORST TH
KOHN E
Citation: W. Ebert et al., HIGH-CURRENT P P+-DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 15(8), 1994, pp. 289-291
Risultati:
1-15
|