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Results: 1-11 |
Results: 11

Authors: MEYER C LUPKE G VONKAMIENSKI ES GOLZ A KURZ H
Citation: C. Meyer et al., NONLINEAR-OPTICAL MAPPING OF 3C-INCLUSIONS IN 6H-SIC-EPILAYERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1374-1377

Authors: GOLZ A GROSS S JANSSEN R VONKAMIENSKI ES KURZ H
Citation: A. Golz et al., FABRICATION OF HIGH-QUALITY OXIDES ON SIC BY REMOTE PECVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1420-1423

Authors: GOLZ A GROSS S JANSSEN R VONKAMIENSKI ES KURZ H
Citation: A. Golz et al., ELECTRICAL-PROPERTIES OF OXIDES ON SILICON-CARBIDE GROWN BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION ANNEALED IN DIFFERENT GAS AMBIENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 363-365

Authors: AFANASEV VV BASSLER M PENSL G SCHULZ MJ VONKAMIENSKI ES
Citation: Vv. Afanasev et al., BAND OFFSETS AND ELECTRONIC-STRUCTURE OF SIC SIO2, INTERFACES/, Journal of applied physics, 79(6), 1996, pp. 3108-3114

Authors: MEYER C LUPKE G VONKAMIENSKI ES GOLZ A KURZ H
Citation: C. Meyer et al., NONLINEAR-OPTICAL MAPPING OF SILICON-CARBIDE POLYTYPES IN GH-SIC EPILAYERS, Applied physics letters, 69(15), 1996, pp. 2243-2245

Authors: VONKAMIENSKI ES GOLZ A KURZ H
Citation: Es. Vonkamienski et al., EFFECTS OF AR AND H-2 ANNEALING ON THE ELECTRICAL-PROPERTIES OF OXIDES ON 6H SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 131-133

Authors: VONKAMIENSKI ES GOLZ A STEIN J KURZ H
Citation: Es. Vonkamienski et al., CHARACTERIZATION OF ANNEALED OXIDES ON N-TYPE 6H-SIC BY HIGH-FREQUENCY AND LOW-FREQUENCY CV-MEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 201-204

Authors: PFEIFER T HEILIGER HM VONKAMIENSKI ES ROSKOS HG KURZ H
Citation: T. Pfeifer et al., CHARGE ACCUMULATION EFFECTS AND MICROWAVE-ABSORPTION OF COPLANAR WAVE-GUIDES FABRICATED ON HIGH-RESISTIVITY SI WITH SIO2 INSULATION LAYER, Applied physics letters, 67(18), 1995, pp. 2624-2626

Authors: HERMANNS JP RUDERS F VONKAMIENSKI ES ROSKOS HG KURZ H HOLLRICHER O BUCHAL C MANTL S
Citation: Jp. Hermanns et al., VERTICAL SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH BURIEDCOSI2, CONTACT, Applied physics letters, 66(7), 1995, pp. 866-868

Authors: PFEIFER T HEILIGER HM VONKAMIENSKI ES ROSKOS HG KURZ H
Citation: T. Pfeifer et al., FABRICATION AND CHARACTERIZATION OF FREELY POSITIONABLE SILICON-ON-SAPPHIRE PHOTOCONDUCTIVE PROBES, Journal of the Optical Society of America. B, Optical physics, 11(12), 1994, pp. 2547-2552

Authors: AVERIN SV VONKAMIENSKI ES ROSKOS HG KERSTING R PLETTNER J GEELEN HJ KOHL A SPAGENBERG B LEO K KURZ H HOLLRICHER O
Citation: Sv. Averin et al., HETEROBARRIER PHOTODIODE MSM STRUCTURES W ITH SUBPICOSECOND TEMPORAL RESOLUTION, Kvantovaa elektronika, 21(9), 1994, pp. 873-877
Risultati: 1-11 |