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Results: 1-21 |
Results: 21
SiGe nanostructures by selective epitaxy and self-assembling
Authors: Vescan, L
Citation: L. Vescan, SiGe nanostructures by selective epitaxy and self-assembling, MAT SCI E A, 302(1), 2001, pp. 6-13
Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
Authors: Loo, R Meunier-Beillard, P Vanhaeren, D Bender, H Caymax, M Vandervorst, W Dentel, D Goryll, M Vescan, L
Citation: R. Loo et al., Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor, J APPL PHYS, 90(5), 2001, pp. 2565-2574
Oblique stacking of three-dimensional dome islands in Ge/Si multilayers
Authors: Sutter, P Mateeva-Sutter, E Vescan, L
Citation: P. Sutter et al., Oblique stacking of three-dimensional dome islands in Ge/Si multilayers, APPL PHYS L, 78(12), 2001, pp. 1736-1738
Room-temperature light-emitting diodes with Ge islands
Authors: Vescan, L Chretien, O Stoica, T Mateeva, E Muck, A
Citation: L. Vescan et al., Room-temperature light-emitting diodes with Ge islands, MAT SC S PR, 3(5-6), 2000, pp. 383-387
Finite element analysis of the strain induced vertical ordering of islandsand determination of compositional modifications in LPCVD-grown GexSi1-x-Si bilayers on Si(001)
Authors: Tillman, K Jager, W Rahmati, B Trinkaus, H Vescan, L Urban, K
Citation: K. Tillman et al., Finite element analysis of the strain induced vertical ordering of islandsand determination of compositional modifications in LPCVD-grown GexSi1-x-Si bilayers on Si(001), PHIL MAG A, 80(2), 2000, pp. 255-277
Size distribution and optical properties of self-assembled Ge on Si
Authors: Vescan, L Goryll, M Stoica, T Gartner, P Grimm, K Chretien, O Mateeva, E Dieker, C Hollander, B
Citation: L. Vescan et al., Size distribution and optical properties of self-assembled Ge on Si, APPL PHYS A, 71(4), 2000, pp. 423-432
Bimodal distribution of Ge islands on Si(001) grown by LPCVD
Authors: Goryll, M Vescan, L Luth, H
Citation: M. Goryll et al., Bimodal distribution of Ge islands on Si(001) grown by LPCVD, MAT SCI E B, 69, 2000, pp. 251-256
Annealing experiments on supercritical Si1-xGex layers grown by RPCVD
Authors: Grimm, K Vescan, L Visser, CCG Nanver, LK Luth, H
Citation: K. Grimm et al., Annealing experiments on supercritical Si1-xGex layers grown by RPCVD, MAT SCI E B, 69, 2000, pp. 261-265
Ordered nucleation of Ge islands along high index planes on Si
Authors: Vescan, L Grimm, K Goryll, M Hollander, B
Citation: L. Vescan et al., Ordered nucleation of Ge islands along high index planes on Si, MAT SCI E B, 69, 2000, pp. 324-328
Influence of the mesa size on Ge island electroluminescence properties
Authors: Chretien, O Stoica, T Dentel, D Mateeva, E Vescan, L
Citation: O. Chretien et al., Influence of the mesa size on Ge island electroluminescence properties, SEMIC SCI T, 15(9), 2000, pp. 920-925
Influence of molecular hydrogen on Ge island nucleation on Si(001)
Authors: Dentel, D Vescan, L Chretien, O Hollander, B
Citation: D. Dentel et al., Influence of molecular hydrogen on Ge island nucleation on Si(001), J APPL PHYS, 88(9), 2000, pp. 5113-5118
Size distribution and electroluminescence of self-assembled Ge dots
Authors: Vescan, L Stoica, T Chretien, O Goryll, M Mateeva, E Muck, A
Citation: L. Vescan et al., Size distribution and electroluminescence of self-assembled Ge dots, J APPL PHYS, 87(10), 2000, pp. 7275-7282
Analysis of high-confinement SiGe/Si waveguides for silicon-based optoelectronics
Authors: Pogossian, S Vescan, L Vonsovici, A
Citation: S. Pogossian et al., Analysis of high-confinement SiGe/Si waveguides for silicon-based optoelectronics, J OPT SOC A, 16(3), 1999, pp. 591-595
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
Authors: Moers, J Klaes, D Tonnesmann, A Vescan, L Wickenhauser, S Grabolla, T Marso, M Kordos, P Luth, H
Citation: J. Moers et al., Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth, SOL ST ELEC, 43(3), 1999, pp. 529-535
19GHz vertical Si p-channel MOSFET
Authors: Moers, J Klaes, D Tonnesmann, A Vescan, L Wickenhauser, S Marso, M Kordos, P Luth, H
Citation: J. Moers et al., 19GHz vertical Si p-channel MOSFET, ELECTR LETT, 35(3), 1999, pp. 239-240
High-confinement SiGe low-loss waveguides for Si-based optoelectronics
Authors: Pogossian, SP Vescan, L Vonsovici, A
Citation: Sp. Pogossian et al., High-confinement SiGe low-loss waveguides for Si-based optoelectronics, APPL PHYS L, 75(10), 1999, pp. 1440-1442
Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 mu m
Authors: Vonsovici, A Vescan, L
Citation: A. Vonsovici et L. Vescan, Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 mu m, IEEE S T QU, 4(6), 1998, pp. 1011-1019
Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures
Authors: Loo, R Caymax, M Simoen, E Howard, D Goryll, M Klaes, D Vescan, L Gravesteijn, D Pettersson, H Zhang, X
Citation: R. Loo et al., Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures, THIN SOL FI, 336(1-2), 1998, pp. 227-231
Morphology and photoluminescence of Ge islands grown on Si(001)
Authors: Goryll, M Vescan, L Luth, H
Citation: M. Goryll et al., Morphology and photoluminescence of Ge islands grown on Si(001), THIN SOL FI, 336(1-2), 1998, pp. 244-247
Selectively grown vertical Si MOS transistor with reduced overlap capacitances
Authors: Klaes, D Moers, J Tonnesmann, A Wickenhauser, S Vescan, L Marso, M Grabolla, T Grimm, M Luth, H
Citation: D. Klaes et al., Selectively grown vertical Si MOS transistor with reduced overlap capacitances, THIN SOL FI, 336(1-2), 1998, pp. 306-308
Room-temperature SiGe light-emitting diodes
Authors: Vescan, L Stoica, T
Citation: L. Vescan et T. Stoica, Room-temperature SiGe light-emitting diodes, J LUMINESC, 80(1-4), 1998, pp. 485-489
Risultati: 1-21 |