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Results: 1-25 | 26-37
Results: 1-25/37
BULK OXIDE TRAPS AND BORDER TRAPS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: FLEETWOOD DM WINOKUR PS RIEWE LC REBER RA
Citation: Dm. Fleetwood et al., BULK OXIDE TRAPS AND BORDER TRAPS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 84(11), 1998, pp. 6141-6148
EFFECTS OF IRRADIATION TEMPERATURE ON MOS RADIATION RESPONSE
Authors: SHANEYFELT MR SCHWANK JR FLEETWOOD DM WINOKUR PS
Citation: Mr. Shaneyfelt et al., EFFECTS OF IRRADIATION TEMPERATURE ON MOS RADIATION RESPONSE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1372-1378
CHEMICAL-KINETICS OF MOBILE-PROTON GENERATION AND ANNIHILATION IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR DRAPER BL WINOKUR PS DEVINE RAB ARCHER LB BROWN GA WALLACE RM
Citation: K. Vanheusden et al., CHEMICAL-KINETICS OF MOBILE-PROTON GENERATION AND ANNIHILATION IN SIO2 THIN-FILMS, Applied physics letters, 73(5), 1998, pp. 674-676
NONVOLATILE MEMORY DEVICE BASED ON MOBILE PROTONS IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K WARREN WL DEVINE RAB FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS LEMNIOS ZJ
Citation: K. Vanheusden et al., NONVOLATILE MEMORY DEVICE BASED ON MOBILE PROTONS IN SIO2 THIN-FILMS, Nature, 386(6625), 1997, pp. 587-589
PROTONIC NONVOLATILE FIELD-EFFECT TRANSISTOR MEMORIES IN SI SIO2/SI STRUCTURES/
Authors: WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR DRAPER BL WINOKUR PS KNOLL MG VANHEUSDEN K DEVINE RAB ARCHER LB WALLACE RM
Citation: Wl. Warren et al., PROTONIC NONVOLATILE FIELD-EFFECT TRANSISTOR MEMORIES IN SI SIO2/SI STRUCTURES/, IEEE transactions on nuclear science, 44(6), 1997, pp. 1789-1798
1 F NOISE, HYDROGEN TRANSPORT, AND LATENT INTERFACE-TRAP BUILDUP IN IRRADIATED MOS DEVICES/
Authors: FLEETWOOD DM JOHNSON MJ MEISENHEIMER TL WINOKUR PS WARREN WL WITCZAK SC
Citation: Dm. Fleetwood et al., 1 F NOISE, HYDROGEN TRANSPORT, AND LATENT INTERFACE-TRAP BUILDUP IN IRRADIATED MOS DEVICES/, IEEE transactions on nuclear science, 44(6), 1997, pp. 1810-1817
IMPACT OF AGING ON RADIATION HARDNESS
Authors: SHANEYFELT MR WINOKUR PS FLEETWOOD DM HASH GL SCHWANK JR SEXTON FW PEASE RL
Citation: Mr. Shaneyfelt et al., IMPACT OF AGING ON RADIATION HARDNESS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2040-2047
A PROPOSED MODEL FOR POSITIVE CHARGE IN SIO2 THIN-FILMS OVER-COORDINATED OXYGEN CENTERS
Authors: WARREN WL VANHEUSDEN K FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., A PROPOSED MODEL FOR POSITIVE CHARGE IN SIO2 THIN-FILMS OVER-COORDINATED OXYGEN CENTERS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2617-2626
EFFECTS OF RELIABILITY SCREENS ON MOS CHARGE TRAPPING
Authors: SHANEYFELT MR WINOKUR PS FLEETWOOD DM SCHWANK JR REBER RA
Citation: Mr. Shaneyfelt et al., EFFECTS OF RELIABILITY SCREENS ON MOS CHARGE TRAPPING, IEEE transactions on nuclear science, 43(3), 1996, pp. 865-872
MECHANISM FOR ANNEAL-INDUCED INTERFACIAL CHARGING IN SIO2 THIN-FILMS ON SI
Authors: WARREN WL VANHEUSDEN K SCHWANK JR FLEETWOOD DM WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., MECHANISM FOR ANNEAL-INDUCED INTERFACIAL CHARGING IN SIO2 THIN-FILMS ON SI, Applied physics letters, 68(21), 1996, pp. 2993-2995
NONUNIFORM OXIDE CHARGE AND PARAMAGNETIC INTERFACE TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2/SI STRUCTURES/
Authors: VANHEUSDEN K WARREN WL SCHWANK JR FLEETWOOD DM SHANEYFELT MR WINOKUR PS DEVINE RAB
Citation: K. Vanheusden et al., NONUNIFORM OXIDE CHARGE AND PARAMAGNETIC INTERFACE TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2/SI STRUCTURES/, Applied physics letters, 68(15), 1996, pp. 2117-2119
DEFECT CENTERS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES
Authors: SHANEYFELT MR WARREN WL HETHERINGTON DL TIMON RP RESNICK PJ WINOKUR PS
Citation: Mr. Shaneyfelt et al., DEFECT CENTERS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES, Microelectronic engineering, 28(1-4), 1995, pp. 71-74
ADVANCED QUALIFICATION TECHNIQUES
Authors: WINOKUR PS SHANEYFELT MR MEISENHEIER TL FLEETWOOD DM
Citation: Ps. Winokur et al., ADVANCED QUALIFICATION TECHNIQUES, Onde electrique, 75(3), 1995, pp. 20-30
BORDER TRAPS - ISSUES FOR MOS RADIATION RESPONSE AND LONG-TERM RELIABILITY
Authors: FLEETWOOD DM SHANEYFELT MR WARREN WL SCHWANK JR MEISENHEIMER TL WINOKUR PS
Citation: Dm. Fleetwood et al., BORDER TRAPS - ISSUES FOR MOS RADIATION RESPONSE AND LONG-TERM RELIABILITY, Microelectronics and reliability, 35(3), 1995, pp. 403-428
EFFECTS OF INTERFACE TRAPS AND BORDER TRAPS ON MOS POSTIRRADIATION ANNEALING RESPONSE
Authors: FLEETWOOD DM WARREN WL SCHWANK JR WINOKUR PS SHANEYFELT MR RIEWE LC
Citation: Dm. Fleetwood et al., EFFECTS OF INTERFACE TRAPS AND BORDER TRAPS ON MOS POSTIRRADIATION ANNEALING RESPONSE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1698-1707
RADIATION-INDUCED DEFECTS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES
Authors: SHANEYFELT MR WARREN WL HETHERINGTON DL WINOKUR PS REBER RA
Citation: Mr. Shaneyfelt et al., RADIATION-INDUCED DEFECTS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1725-1730
ELECTRON AND HOLE TRAPPING IN DOPED OXIDES
Authors: WARREN WL SHANEYFELT MR FLEETWOOD DM WINOKUR PS MONTAGUE S
Citation: Wl. Warren et al., ELECTRON AND HOLE TRAPPING IN DOPED OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1731-1739
NATURE OF DEFECT CENTERS IN B-DOPED AND P-DOPED SIO2 THIN-FILMS
Authors: WARREN WL SHANEYFELT MR FLEETWOOD DM WINOKUR PS
Citation: Wl. Warren et al., NATURE OF DEFECT CENTERS IN B-DOPED AND P-DOPED SIO2 THIN-FILMS, Applied physics letters, 67(7), 1995, pp. 995-997
ACCOUNTING FOR TIME-DEPENDENT EFFECTS ON CMOS TOTAL-DOSE RESPONSE IN-SPACE ENVIRONMENTS
Authors: FLEETWOOD DM WINOKUR PS BARNES CE SHAW DC
Citation: Dm. Fleetwood et al., ACCOUNTING FOR TIME-DEPENDENT EFFECTS ON CMOS TOTAL-DOSE RESPONSE IN-SPACE ENVIRONMENTS, Radiation physics and chemistry, 43(1-2), 1994, pp. 129-138
RADIATION-HARDENED MICROELECTRONICS FOR SPACE APPLICATIONS
Authors: WINOKUR PS FLEETWOOD DM SEXTON FW
Citation: Ps. Winokur et al., RADIATION-HARDENED MICROELECTRONICS FOR SPACE APPLICATIONS, Radiation physics and chemistry, 43(1-2), 1994, pp. 175-190
DEFECT-DEFECT HOLE TRANSFER AND THE IDENTITY OF BORDER TRAPS IN SIO2-FILMS
Authors: WARREN WL FLEETWOOD DM SHANEYFELT MR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., DEFECT-DEFECT HOLE TRANSFER AND THE IDENTITY OF BORDER TRAPS IN SIO2-FILMS, Physical review. B, Condensed matter, 50(19), 1994, pp. 14710-14713
MICROSCOPIC NATURE OF BORDER TRAPS IN MOS OXIDES
Authors: WARREN WL SHANEYFELT MR FLEETWOOD DM SCHWANK JR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., MICROSCOPIC NATURE OF BORDER TRAPS IN MOS OXIDES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1817-1827
PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES
Authors: FLEETWOOD DM KOSIER SL NOWLIN RN SCHRIMPF RD REBER RA DELAUS M WINOKUR PS WEI A COMBS WE PEASE RL
Citation: Dm. Fleetwood et al., PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1871-1883
3-DIMENSIONAL SIMULATION OF CHARGE COLLECTION AND MULTIPLE-BIT UPSET IN SI DEVICES
Authors: DODD PE SEXTON FW WINOKUR PS
Citation: Pe. Dodd et al., 3-DIMENSIONAL SIMULATION OF CHARGE COLLECTION AND MULTIPLE-BIT UPSET IN SI DEVICES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2005-2017
HARDNESS VARIABILITY IN COMMERCIAL TECHNOLOGIES
Authors: SHANEYFELT MR WINOKUR PS MEISENHEIMER TL SEXTON FW ROESKE SB KNOLL MG
Citation: Mr. Shaneyfelt et al., HARDNESS VARIABILITY IN COMMERCIAL TECHNOLOGIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2536-2543
Risultati: 1-25 | 26-37