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Results: 1-12 |
Results: 12

Authors: BLOCK TR WOJTOWICZ M HAN AC OLSON SR OKI AK STREIT DC
Citation: Tr. Block et al., MULTIWAFER MOLECULAR-BEAM EPITAXY FOR HIGH-VOLUME PRODUCTION OF GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WAFERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1475-1478

Authors: BLAGOSKLONNY MV GIANNAKAKOU P WOJTOWICZ M ROMANOVA LY AIN KB BATES SE FOJO T
Citation: Mv. Blagosklonny et al., EFFECTS OF P53-EXPRESSING ADENOVIRUS ON THE CHEMOSENSITIVITY AND DIFFERENTIATION OF ANAPLASTIC THYROID-CANCER CELLS, The Journal of clinical endocrinology and metabolism, 83(7), 1998, pp. 2516-2522

Authors: MISHORI B LEIBOVITCH M SHAPIRA Y POLLAK FH STREIT DC WOJTOWICZ M
Citation: B. Mishori et al., SURFACE PHOTOVOLTAGE SPECTROSCOPY OF A GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, Applied physics letters, 73(5), 1998, pp. 650-652

Authors: BLOCK TR COWLES J TRAN L WOJTOWICZ M OKI AK STREIT DC
Citation: Tr. Block et al., MBE GROWTH OF QUATERNARY INGAALAS LAYERS IN INGAAS INALAS HBTS TO IMPROVE DEVICE PERFORMANCE/, Journal of crystal growth, 175, 1997, pp. 903-909

Authors: WOJTOWICZ M PASCUA D HAN AC BLOCK TR STREIT DC
Citation: M. Wojtowicz et al., PHOTOLUMINESCENCE CHARACTERIZATION OF MBE GROWN ALGAAS INGAAS/GAAS PSEUDOMORPHIC HEMTS/, Journal of crystal growth, 175, 1997, pp. 930-934

Authors: HAN AC WOJTOWICZ M PASCUA D BLOCK TR STREIT DC
Citation: Ac. Han et al., PHOTOREFLECTANCE STUDY OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of applied physics, 82(5), 1997, pp. 2607-2610

Authors: STREIT DC OKI AK BLOCK TR LAMMERT MD HOPPE MM UMEMOTO DK WOJTOWICZ M
Citation: Dc. Streit et al., COMMERCIAL HETEROJUNCTION BIPOLAR-TRANSISTOR PRODUCTION BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2216-2220

Authors: BLOCK TR WOJTOWICZ M COWLES J TRAN L OKI AK STREIT DC
Citation: Tr. Block et al., MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INGAALAS-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS WITH 140 GHZ - F-MAX AND 20 V BREAKDOWN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2221-2224

Authors: STREIT DC BLOCK TR HAN AC WOJTOWICZ M UMEMOTO DK KOBAYASHI K OKI AK LIU PH LAI R NG GI
Citation: Dc. Streit et al., GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 771-773

Authors: STREIT DC BLOCK TR WOJTOWICZ M PASCUA D LAI R NG GI LIU PH TAN KL
Citation: Dc. Streit et al., GRADED-CHANNEL INGAAS-INALAS-INP HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 774-776

Authors: MESHKINPOUR M GOORSKY MS CHU G STREIT DC BLOCK TR WOJTOWICZ M
Citation: M. Meshkinpour et al., ROLE OF MISFIT DISLOCATIONS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, Applied physics letters, 66(6), 1995, pp. 748-750

Authors: WOJTOWICZ M LAI R STREIT DC NG GI BLOCK TR TAN KL LIU PH FREUDENTHAL AK DIA RM
Citation: M. Wojtowicz et al., 0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX, IEEE electron device letters, 15(11), 1994, pp. 477-479
Risultati: 1-12 |