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Results:
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Results: 25
Authors:
Kimura, T
Wakaya, F
Gamo, K
Citation: T. Kimura et al., Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array, JPN J A P 1, 40(7), 2001, pp. 4524-4527
Authors:
Kimura, T
Mozumi, G
Wakaya, F
Gamo, K
Citation: T. Kimura et al., Effects of shape anisotropy in CoO/Co/Cu/NiFe/Cu/Co wires, JPN J A P 1, 40(4A), 2001, pp. 2241-2244
Authors:
Kimura, T
Wakaya, F
Gamo, K
Citation: T. Kimura et al., Magnetization processes in narrow and wide cross-shaped Co/Cu/NiFe wires, JPN J A P 1, 40(3A), 2001, pp. 1246-1249
Authors:
Kimura, T
Wakaya, F
Gamo, K
Citation: T. Kimura et al., Effects of stray fields in flat-end and pointed-end NiFe/Cu/NiFe/NiO wires, JPN J A P 1, 40(11), 2001, pp. 6357-6359
Authors:
Kadota, T
Kageyama, H
Wakaya, F
Gamo, K
Shirota, Y
Citation: T. Kadota et al., Amorphous molecular materials: development of novel negative electron-beammolecular resists, MAT SCI E C, 16(1-2), 2001, pp. 91-94
Authors:
Kimura, T
Wakaya, F
Gamo, K
Citation: T. Kimura et al., Effect of stray field induced by cross shape in a 200-nm-wide Co wire, J MAGN MAGN, 236(3), 2001, pp. 262-266
Authors:
Hada, T
Miyamoto, H
Yanagisawa, J
Wakaya, F
Yuba, Y
Gamo, K
Citation: T. Hada et al., Carrier activation in in situ Si-doped GaAs layers fabricated by a focusedSi ion beam and molecular beam epitaxy combined system, NUCL INST B, 175, 2001, pp. 751-755
Authors:
Yoshida, M
Murakami, S
Nakayama, M
Yanagisawa, J
Wakaya, F
Kaito, T
Gamo, K
Citation: M. Yoshida et al., Formation of narrow grooves on thin metal layer by focused ion beam etching, MICROEL ENG, 57-8, 2001, pp. 877-882
Authors:
Kimura, T
Itagaki, Y
Wakaya, F
Gamo, K
Citation: T. Kimura et al., Study of dipole interaction in micron-width NiFe/Cu/NiFe/NiO wire using exchange anisotropy, APPL PHYS L, 78(25), 2001, pp. 4007-4009
Authors:
Kimura, T
Wakaya, F
Yanagisawa, J
Yuba, Y
Gamo, K
Citation: T. Kimura et al., Galvanomagnetic effect of submicron exchange-coupled Co/Ni wire, JPN J A P 1, 39(12A), 2000, pp. 6526-6529
Authors:
Hada, T
Goto, T
Yanagisawa, J
Wakaya, F
Yuba, Y
Gamo, K
Citation: T. Hada et al., Carrier distribution profiles in Si-doped layers in GaAs formed by focusedion beam implantation and successive overlayer growth, J VAC SCI B, 18(6), 2000, pp. 3158-3161
Authors:
Tsubaki, S
Fujita, N
Wakaya, F
Yuba, Y
Gamo, K
Citation: S. Tsubaki et al., Linear and nonlinear transports of coupled quantum dots, SUPERLATT M, 27(5-6), 2000, pp. 363-367
Authors:
Wakaya, F
Nakamichi, S
Gamo, K
Mandai, S
Iwabuchi, S
Citation: F. Wakaya et al., Resistively coupled single-electron transistor using tunnel gate resistor, SUPERLATT M, 27(5-6), 2000, pp. 603-606
Authors:
Kimura, T
Wakaya, F
Yanagisawa, J
Yuba, Y
Gamo, K
Citation: T. Kimura et al., Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire, J MAGN MAGN, 222(1-2), 2000, pp. 79-85
Authors:
Goto, T
Hada, T
Yanagisawa, J
Wakaya, F
Yuba, Y
Gamo, K
Citation: T. Goto et al., Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system, APPL SURF S, 159, 2000, pp. 277-281
Authors:
Wakaya, F
Mandai, S
Nakamichi, S
Iwabuchi, S
Gamo, K
Citation: F. Wakaya et al., Capacitively- and resistively-coupled single-electron transistor, MICROEL ENG, 53(1-4), 2000, pp. 195-198
Authors:
Kimura, T
Wakaya, F
Yanagisawa, J
Yuba, Y
Gamo, K
Citation: T. Kimura et al., Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film, JPN J A P 1, 38(8), 1999, pp. 4737-4740
Authors:
Wakaya, F
Yoshioka, F
Higurashi, H
Iwabuchi, S
Nagaoka, Y
Gamo, K
Citation: F. Wakaya et al., Control of single-electron device using environmental impedance modulation, JPN J A P 1, 38(5A), 1999, pp. 2812-2815
Authors:
Wakaya, F
Kitamura, K
Iwabuchi, S
Gamo, K
Citation: F. Wakaya et al., Transport properties of a resistively-coupled single-electron transistor, JPN J A P 1, 38(4B), 1999, pp. 2470-2472
Authors:
Nakayama, M
Yanagisawa, J
Wakaya, F
Gamo, K
Citation: M. Nakayama et al., Focused ion beam process for formation of a metal/insulator/metal double tunnel junction, JPN J A P 1, 38(12B), 1999, pp. 7151-7154
Authors:
Yanagisawa, J
Goto, T
Hada, T
Nakai, M
Wakaya, F
Yuba, Y
Gamo, K
Citation: J. Yanagisawa et al., Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system, J VAC SCI B, 17(6), 1999, pp. 3072-3074
Authors:
Wakaya, F
Iwabuchi, S
Higurashi, H
Nagaoka, Y
Gamo, K
Citation: F. Wakaya et al., Effects of asymmetric environment on the island charge state of single-electron transistors, MICROEL ENG, 47(1-4), 1999, pp. 193-195
Authors:
Kitawaki, R
Wakaya, F
Iwabuchi, S
Citation: R. Kitawaki et al., Coulomb blockade and higher order tunneling effect in ultrasmall ferromagnetic double tunnel junction, MICROEL ENG, 47(1-4), 1999, pp. 413-415
Authors:
Wakaya, F
Yoshioka, F
Furuichi, S
Higurashi, H
Iwabuchi, S
Nagaoka, Y
Gamo, K
Citation: F. Wakaya et al., Single-electron transistor controlled by environmental impedance: Effects of capacitive environmental impedance, MICROEL ENG, 46(1-4), 1999, pp. 153-156
Authors:
Wakaya, F
Iwabuchi, S
Higurashi, H
Nagaoka, Y
Gamo, K
Citation: F. Wakaya et al., Possible control method for single-electron tunneling based on environmental-impedance modulation, APPL PHYS L, 74(1), 1999, pp. 135-137
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