AAAAAA

   
Results: 1-25 | 26-50 | 51-59
Results: 1-25/59
Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions
Authors: Jager, ND Weber, ER Salmeron, M
Citation: Nd. Jager et al., Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions, J VAC SCI B, 19(2), 2001, pp. 511-516
GaAsN-on-GaAs MBE using a DC plasma source
Authors: Zhukov, AE Semenova, ES Ustinov, VM Weber, ER
Citation: Ae. Zhukov et al., GaAsN-on-GaAs MBE using a DC plasma source, TECH PHYS, 46(10), 2001, pp. 1265-1269
Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells
Authors: Shapiro, NA Feick, H Gardner, NF Gotz, WK Waltereit, P Speck, JS Weber, ER
Citation: Na. Shapiro et al., Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 147-151
Gettering simulator: physical basis and algorithm
Authors: Hieslmair, H Balasubramanian, S Istratov, AA Weber, ER
Citation: H. Hieslmair et al., Gettering simulator: physical basis and algorithm, SEMIC SCI T, 16(7), 2001, pp. 567-574
MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source
Authors: Zhukov, AE Zhao, R Specht, P Ustinov, VM Anders, A Weber, ER
Citation: Ae. Zhukov et al., MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source, SEMIC SCI T, 16(5), 2001, pp. 413-419
Radiation-induced defects in oxygen-enriched silicon detector materials
Authors: Feick, H Weber, ER
Citation: H. Feick et Er. Weber, Radiation-induced defects in oxygen-enriched silicon detector materials, NUCL INST A, 473(1-2), 2001, pp. 114-118
Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration
Authors: Lindstrom, G Ahmed, M Albergo, S Allport, P Anderson, D Andricek, L Angarano, MM Augelli, V Bacchetta, N Bartalini, P Bates, R Biggeri, U Bilei, GM Bisello, D Boemi, D Borchi, E Botila, T Brodbeck, TJ Bruzzi, M Budzynski, T Burger, P Campabadal, F Casse, G Catacchini, E Chilingarov, A Ciampolini, P Cindro, V Costa, MJ Creanza, D Clauws, P Da Via, C Davies, G De Boer, W Dell'Orso, R De Palma, M Dezillie, B Eremin, V Evrard, O Fallica, G Fanourakis, G Feick, H Focardi, E Fonseca, L Fretwurst, E Fuster, J Gabathuler, K Glaser, M Grabiec, P Grigoriev, E Hall, G Hanlon, M Hauler, F Heising, S Holmes-Siedle, A Horisberger, R Hughes, G Huhtinen, M Ilyashenko, I Ivanov, A Jones, BK Jungermann, L Kaminsky, A Kohout, Z Kramberger, G Kuhnke, M Kwan, S Lemeilleur, F Leroy, C Letheren, M Li, Z Ligonzo, T Linhart, V Litovchenko, P Loukas, D Lozano, M Luczynski, Z Lutz, G MacEvoy, B Manolopoulos, S Markou, A Martinez, C Messineo, A Mikuz, M Moll, M Nossarzewska, E Ottaviani, G Oshea, V Parrini, G Passeri, D Petre, D Pickford, A Pintilie, I Pintilie, L Pospisil, S Potenza, R Raine, C Rafi, JM Ratoff, PN Richter, RH Riedler, P Roe, S Roy, P Ruzin, A Ryazanov, AI Santocchia, A Schiavulli, L Sicho, P Siotis, I Sloan, T Slysz, W Smith, K Solanky, M Sopko, B Stolze, K Avset, BS Svensson, B Tivarus, C Tonelli, G Tricomi, A Tzamarias, S Valvo, G Vasilescu, A Vayaki, A Verbitskaya, E Verdini, P Vrba, V Watts, S Weber, ER Wegrzecki, M Wegrzecka, I Weilhammer, P Wheadon, R Wilburn, C Wilhelm, I Wunstorf, R Wustenfeld, J Wyss, J Zankel, K Zabierowski, P Zontar, D
Citation: G. Lindstrom et al., Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration, NUCL INST A, 466(2), 2001, pp. 308-326
Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration
Authors: Lindstrom, G Ahmed, M Albergo, S Allport, P Anderson, D Andricek, L Angarano, MM Augelli, V Bacchetta, N Bartalini, P Bates, R Biggeri, U Bilei, GM Bisello, D Boemi, D Borchi, E Botila, T Brodbeck, TJ Bruzzi, M Budzynski, T Burger, P Campabadal, F Casse, G Catacchini, E Chilingarov, A Ciampolini, P Cindro, V Costa, MJ Creanza, D Clauws, P Da Via, C Davies, G De Boer, W Dell'Orso, R De Palma, M Dezillie, B Eremin, V Evrard, O Fallica, G Fanourakis, G Feick, H Focardi, E Fonseca, L Fretwurst, E Fuster, J Gabathuler, K Glaser, M Grabiec, P Grigoriev, E Hall, G Hanlon, M Hauler, F Heising, S Holmes-Siedle, A Horisberger, R Hughes, G Huhtinen, M Ilyashenko, I Ivanov, A Jones, BK Jungermann, L Kaminsky, A Kohout, Z Kramberger, C Kuhnke, M Kwan, S Lemeilleur, F Leroy, C Letheren, M Li, Z Ligonzo, T Linhart, V Litovchenko, P Loukas, D Lozano, M Luczynski, Z Lutz, G MacEvoy, B Manolopoulos, S Markou, A Martinez, C Messineo, A Miku, M Moll, M Nossarzewska, E Ottaviani, G Oshea, V Parrini, G Passeri, D Petre, D Pickford, A Pintilie, I Pintilie, L Pospisil, S Potenza, R Radicci, V Raine, C Rafi, JM Ratoff, PN Richter, RH Riedler, P Roe, S Roy, P Ruzin, A Ryazanov, AI Santocchia, A Schiavulli, L Sicho, P Siotis, I Sloan, T Slysz, W Smith, K Solanky, M Sopko, B Stolze, K Avset, BS Svensson, B Tivarus, C Tonelli, G Tricomi, A Tzamarias, S Valvo, G Vasilescu, A Vayaki, A Verbitskaya, E Verdini, P Vrba, V Watts, S Weber, ER Wegrzecki, M Wegrzecka, I Weilhammer, P Wheadon, R Wilburn, C Wilhelm, I Wunstorf, R Wustenfeld, J Wyss, J Zankel, K Zabierowski, P Zontar, D
Citation: G. Lindstrom et al., Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration, NUCL INST A, 465(1), 2001, pp. 60-69
Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights - art. no. 045322
Authors: Gworek, CS Phatak, P Jonker, BT Weber, ER Newman, N
Citation: Cs. Gworek et al., Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights - art. no. 045322, PHYS REV B, 6404(4), 2001, pp. 5322
High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures
Authors: Harutyunyan, VS Aivazyan, AP Weber, ER Kim, Y Park, Y Subramanya, SG
Citation: Vs. Harutyunyan et al., High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures, J PHYS D, 34(10A), 2001, pp. A35-A39
Recombination activity of copper in silicon
Authors: Sachdeva, R Istratov, AA Weber, ER
Citation: R. Sachdeva et al., Recombination activity of copper in silicon, APPL PHYS L, 79(18), 2001, pp. 2937-2939
Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth
Authors: Kim, Y Shapiro, NA Feick, H Armitage, R Weber, ER Yang, Y Cerrina, F
Citation: Y. Kim et al., Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth, APPL PHYS L, 78(7), 2001, pp. 895-897
Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors
Authors: Nozaki, S Feick, H Weber, ER Micovic, M Nguyen, C
Citation: S. Nozaki et al., Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors, APPL PHYS L, 78(19), 2001, pp. 2896-2898
Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors
Authors: Ganichev, SD Ziemann, E Prettl, W Yassievich, IN Istratov, AA Weber, ER
Citation: Sd. Ganichev et al., Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors, PHYS REV B, 61(15), 2000, pp. 10361-10365
Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth
Authors: Park, Y Cich, MJ Zhao, R Specht, P Weber, ER Stach, E Nozaki, S
Citation: Y. Park et al., Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth, J VAC SCI B, 18(3), 2000, pp. 1566-1571
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
Authors: Liu, WK Lubyshev, DI Specht, P Zhao, R Weber, ER Gebauer, J SpringThorpe, AJ Streater, RW Vijarnwannaluk, S Songprakob, W Zallen, R
Citation: Wk. Liu et al., Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4, J VAC SCI B, 18(3), 2000, pp. 1594-1597
A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches
Authors: Armitage, R Cich, M Rubin, M Weber, ER
Citation: R. Armitage et al., A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches, APPL PHYS A, 71(6), 2000, pp. 647-650
Iron contamination in silicon technology
Authors: Istratov, AA Hieslmair, H Weber, ER
Citation: Aa. Istratov et al., Iron contamination in silicon technology, APPL PHYS A, 70(5), 2000, pp. 489-534
Diffusion, solubility and gettering of copper in silicon
Authors: Istratov, AA Flink, C Hieslmair, H McHugo, SA Weber, ER
Citation: Aa. Istratov et al., Diffusion, solubility and gettering of copper in silicon, MAT SCI E B, 72(2-3), 2000, pp. 99-104
Advanced Gettering techniques in ULSI technology
Authors: Istratov, AA Hieslmair, H Weber, ER
Citation: Aa. Istratov et al., Advanced Gettering techniques in ULSI technology, MRS BULL, 25(6), 2000, pp. 33-38
Impact of the unique physical properties of copper in silicon on characterization of copper diffusion barriers
Authors: Istratov, AA Flink, C Weber, ER
Citation: Aa. Istratov et al., Impact of the unique physical properties of copper in silicon on characterization of copper diffusion barriers, PHYS ST S-B, 222(1), 2000, pp. 261-277
Molecular cloning and phylogenetic analysis of a cDNA encoding the cat (Felis domesticus) Ig epsilon constant region
Authors: Weber, ER Helps, CR Foster, AP Perry, ACF Gruffydd-Jones, TJ Hall, L Harbour, DA Duffus, WPH
Citation: Er. Weber et al., Molecular cloning and phylogenetic analysis of a cDNA encoding the cat (Felis domesticus) Ig epsilon constant region, VET IMMUNOL, 76(3-4), 2000, pp. 299-308
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
Authors: Shapiro, NA Kim, Y Feick, H Weber, ER Perlin, P Yang, JW Akasaki, I Amano, H
Citation: Na. Shapiro et al., Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain, PHYS REV B, 62(24), 2000, pp. R16318-R16321
Transition thickness of semiconductor heteroepitaxy
Authors: Sasaki, A Weber, ER Liliental-Weber, Z Ruvimov, S Washburn, J Nabetani, Y
Citation: A. Sasaki et al., Transition thickness of semiconductor heteroepitaxy, THIN SOL FI, 367(1-2), 2000, pp. 277-280
Out-diffusion and precipitation of copper in silicon: An electrostatic model
Authors: Flink, C Feick, H McHugo, SA Seifert, W Hieslmair, H Heiser, T Istratov, AA Weber, ER
Citation: C. Flink et al., Out-diffusion and precipitation of copper in silicon: An electrostatic model, PHYS REV L, 85(23), 2000, pp. 4900-4903
Risultati: 1-25 | 26-50 | 51-59