AAAAAA
Results:
1-23
|
Results: 23
Authors:
Wetzel, C
Amano, T
Akasaki, I
Ager, JW
Grzegory, I
Meyer, BK
Citation: C. Wetzel et al., DX-like behavior of oxygen in GaN, PHYSICA B, 302, 2001, pp. 23-38
Authors:
Wetzel, C
Kasumi, M
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells, PHYS ST S-A, 183(1), 2001, pp. 51-60
Authors:
Wetzel, C
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design, JPN J A P 1, 39(4B), 2000, pp. 2425-2427
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures, PHYS REV B, 61(3), 2000, pp. 2159-2163
Authors:
Wetzel, C
Amano, H
Akasaki, I
Ager, JW
Grzegory, I
Topf, M
Meyer, BK
Citation: C. Wetzel et al., Localized vibrational modes in GaN : O tracing the formation of oxygen DX-like centers under hydrostatic pressure, PHYS REV B, 61(12), 2000, pp. 8202-8206
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Spectroscopy in polarized and piezoelectric AlGaInN heterostructures, MRS I J N S, 5, 2000, pp. NIL_822-NIL_833
Authors:
Flourentzou, F
Brandt, E
Wetzel, C
Citation: F. Flourentzou et al., MEDIC - a method for predicting residual service life and refurbishment investment budgets, ENERG BLDG, 31(2), 2000, pp. 167-170
Authors:
Wetzel, C
Detchprohm, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices, J ELEC MAT, 29(3), 2000, pp. 252-255
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, YW
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, YS
Yamada, N
Citation: T. Takeuchi et al., Nitride-based laser diodes using thick n-AlGaN layers, J ELEC MAT, 29(3), 2000, pp. 302-305
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells, PHYS REV B, 62(20), 2000, pp. R13302-R13305
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy, APPL PHYS L, 76(7), 2000, pp. 876-878
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures, JPN J A P 2, 38(2B), 1999, pp. L163-L165
Authors:
Wu, DY
Wright, DA
Wetzel, C
Voytas, DF
Rodermel, S
Citation: Dy. Wu et al., The immutans variegation locus of Arabidopsis defines a mitochondrial alternative oxidase homolog that functions during early chloroplast biogenesis, PL CELL, 11(1), 1999, pp. 43-55
Authors:
Ambe, C
Takeuchi, T
Katoh, H
Isomura, K
Satoh, T
Mizumoto, R
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, Y
Yamada, N
Citation: C. Ambe et al., GaN-based laser diode with focused ion beam-etched mirrors, MAT SCI E B, 59(1-3), 1999, pp. 382-385
Authors:
Wetzel, C
Ager, JW
Topf, M
Meyer, BK
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Correlation of vibrational modes and DX-like centers in GaN : O, PHYSICA B, 274, 1999, pp. 109-112
Authors:
Wetzel, C
Kasumi, M
Detchprohm, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Discrete stark-like ladder in piezoelectric GaInN/GaN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 399-403
Authors:
Amano, H
Iwaya, M
Hayashi, N
Kashima, T
Nitta, S
Wetzel, C
Akasaki, I
Citation: H. Amano et al., Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer, PHYS ST S-B, 216(1), 1999, pp. 683-689
Authors:
Hatt, H
Gisselman, G
Wetzel, C
Citation: H. Hatt et al., Cloning, functional expression and characterization of a human olfactory receptor, CELL MOL B, 45(3), 1999, pp. 285-291
Authors:
Wetzel, C
Bents, H
Florin, I
Citation: C. Wetzel et al., High-density exposure therapy for obsessive-compulsive inpatients: A 1-year follow-up, PSYCHOTH PS, 68(4), 1999, pp. 186-192
Authors:
Wetzel, C
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures, J APPL PHYS, 85(7), 1999, pp. 3786-3791
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy, J APPL PHYS, 85(11), 1999, pp. 7682-7688
Authors:
Amano, H
Takeuchi, T
Yamaguchi, S
Wetzel, C
Akasaki, I
Citation: H. Amano et al., Characterization of the crystalline quality on GaN on sapphire and ternaryalloys, ELEC C JP 2, 81(10), 1998, pp. 48-54
Authors:
Yamaguchi, S
Kariya, M
Nitta, S
Kato, H
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
Citation: S. Yamaguchi et al., Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 309-313
Risultati:
1-23
|