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Results: 1-18 |
Results: 18
From localised to ballistic excitons in GaAs quantum wells
Authors: Pulizzi, F Christianen, PCM Maan, JC Eshlaghi, S Reuter, D Wieck, AD
Citation: F. Pulizzi et al., From localised to ballistic excitons in GaAs quantum wells, ACT PHY P A, 100(3), 2001, pp. 397-402
Single-electron tunneling through individual InAs quantum dots within a saddle point potential
Authors: Versen, M Schmidt, KH Bock, C Reuter, D Wieck, AD Kunze, U
Citation: M. Versen et al., Single-electron tunneling through individual InAs quantum dots within a saddle point potential, PHYS ST S-B, 224(3), 2001, pp. 669-673
Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography
Authors: Reuter, D Kahler, D Kunze, U Wieck, AD
Citation: D. Reuter et al., Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography, SEMIC SCI T, 16(7), 2001, pp. 603-607
Dynamic band-structure modulation of quantum wells by surface acoustic waves - art. no. 121307
Authors: Sogawa, T Santos, PV Zhang, SK Eshlaghi, S Wieck, AD Ploog, KH
Citation: T. Sogawa et al., Dynamic band-structure modulation of quantum wells by surface acoustic waves - art. no. 121307, PHYS REV B, 6312(12), 2001, pp. 1307
Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices
Authors: Reuter, D Meier, C Alvarez, MAS Wieck, AD
Citation: D. Reuter et al., Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices, APPL PHYS L, 79(3), 2001, pp. 377-379
Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems
Authors: Heidtkamp, C Lassen, S Schneider, M Reuter, D Versen, M Wieck, AD
Citation: C. Heidtkamp et al., Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems, PHYSICA B, 284, 2000, pp. 1726-1727
Tunable backscattering in quantum Hall systems induced by neighbouring gates
Authors: Heidtkamp, C Meier, C Reuter, D Versen, M Hoch, S Diaconescu, D Wieck, AD
Citation: C. Heidtkamp et al., Tunable backscattering in quantum Hall systems induced by neighbouring gates, PHYSICA B, 284, 2000, pp. 1728-1729
A new peak in the bend resistance of a four-terminal device written by FIBimplantation
Authors: Diaconescu, D Hoch, S Heidtkamp, C Meier, C Reuter, D Wieck, AD
Citation: D. Diaconescu et al., A new peak in the bend resistance of a four-terminal device written by FIBimplantation, PHYSICA B, 284, 2000, pp. 1906-1907
Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching
Authors: Skaberna, S Versen, M Klehn, B Kunze, U Reuter, D Wieck, AD
Citation: S. Skaberna et al., Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching, ULTRAMICROS, 82(1-4), 2000, pp. 153-157
Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope
Authors: Versen, M Klehn, B Kunze, U Reuter, D Wieck, AD
Citation: M. Versen et al., Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope, ULTRAMICROS, 82(1-4), 2000, pp. 159-163
Electron transport through a single InAs quantum dot
Authors: Schmidt, KH Versen, M Kunze, U Reuter, D Wieck, AD
Citation: Kh. Schmidt et al., Electron transport through a single InAs quantum dot, PHYS REV B, 62(23), 2000, pp. 15879-15887
Hot-electron effects in two-dimensional hopping with a large localization length
Authors: Gershenson, ME Khavin, YB Reuter, D Schafmeister, P Wieck, AD
Citation: Me. Gershenson et al., Hot-electron effects in two-dimensional hopping with a large localization length, PHYS REV L, 85(8), 2000, pp. 1718-1721
Increased mobility anisotropy in selectively doped AlxGa1-xAs/GaAs heterostructures with high electron densities
Authors: Reuter, D Versen, M Schneider, MD Wieck, AD
Citation: D. Reuter et al., Increased mobility anisotropy in selectively doped AlxGa1-xAs/GaAs heterostructures with high electron densities, J APPL PHYS, 88(1), 2000, pp. 321-325
Photon-drag effect in a two-dimensional electron gas in high magnetic fields
Authors: Koch, J Wieck, AD
Citation: J. Koch et Ad. Wieck, Photon-drag effect in a two-dimensional electron gas in high magnetic fields, SUPERLATT M, 25(1-2), 1999, pp. 143-148
A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy
Authors: Reuter, D Wieck, AD Fischer, A
Citation: D. Reuter et al., A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy, REV SCI INS, 70(8), 1999, pp. 3435-3438
Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells
Authors: Eshlaghi, S Meier, C Suter, D Reuter, D Wieck, AD
Citation: S. Eshlaghi et al., Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells, J APPL PHYS, 86(11), 1999, pp. 6605-6607
Ionization and displacement damage irradiation studies of quantum devices:Resonant tunneling diodes and two-dimensional electron gas transistors
Authors: Wilkins, R Shojah-Ardalan, S Kirk, WP Spencer, GF Bate, RT Seabaugh, AC Lake, R Stelmaszyk, P Wieck, AD Fogarty, TN
Citation: R. Wilkins et al., Ionization and displacement damage irradiation studies of quantum devices:Resonant tunneling diodes and two-dimensional electron gas transistors, IEEE NUCL S, 46(6), 1999, pp. 1702-1707
Study of the hot spot of an in-plane gate transistor by scanning Joule expansion microscopy
Authors: Bolte, J Niebisch, F Pelzl, J Stelmaszyk, P Wieck, AD
Citation: J. Bolte et al., Study of the hot spot of an in-plane gate transistor by scanning Joule expansion microscopy, J APPL PHYS, 84(12), 1998, pp. 6917-6922
Risultati: 1-18 |