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Results: 1-13 |
Results: 13
The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Liao, Y Winser, AJ Harrison, I Li, T Campion, RP Staddon, CR Davis, CS
Citation: Ct. Foxon et al., The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 203-206
On the origin of blue emission from As-doped GaN
Authors: Harrison, I Novikov, SV Li, T Campion, RP Staddon, CR Davis, CS Liao, Y Winser, AJ Foxon, CT
Citation: I. Harrison et al., On the origin of blue emission from As-doped GaN, PHYS ST S-B, 228(1), 2001, pp. 213-217
The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Liao, Y Winser, AJ Harrison, I
Citation: Ct. Foxon et al., The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 219-222
Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system
Authors: Novikov, SV Li, T Winser, AJ Campion, RP Staddon, CR Davic, CS Harrison, I Foxon, CT
Citation: Sv. Novikov et al., Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system, PHYS ST S-B, 228(1), 2001, pp. 223-225
The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers
Authors: Novikov, SV Li, T Winser, AJ Foxon, CT Campion, RP Staddon, CR Davis, CS Harrison, I Kovarsky, AP Ber, BJ
Citation: Sv. Novikov et al., The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers, PHYS ST S-B, 228(1), 2001, pp. 227-229
A study of the mechanisms responsible for blue emission from arsenic-dopedgallium nitride
Authors: Novikov, SV Winser, AJ Harrison, I Davis, CS Foxon, CT
Citation: Sv. Novikov et al., A study of the mechanisms responsible for blue emission from arsenic-dopedgallium nitride, SEMIC SCI T, 16(2), 2001, pp. 103-106
A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy
Authors: Marlafeka, S Bock, N Cheng, TS Novikov, SV Winser, AJ Harrison, I Foxon, CT Brown, PD
Citation: S. Marlafeka et al., A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy, J CRYST GR, 230(3-4), 2001, pp. 415-420
Blue emission from arsenic doped gallium nitride
Authors: Winser, AJ Harrison, I Novikov, SV Davis, CS Campion, R Cheng, TS Foxon, CT
Citation: Aj. Winser et al., Blue emission from arsenic doped gallium nitride, J CRYST GR, 230(3-4), 2001, pp. 527-532
Growth of GaNAs films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Davis, CS Cheng, TS Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Growth of GaNAs films by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 486-490
Carrier relaxation dynamics for As defects in GaN
Authors: Gil, B Morel, A Taliercio, T Lefebvre, P Foxon, CT Harrison, I Winser, AJ Novikov, SV
Citation: B. Gil et al., Carrier relaxation dynamics for As defects in GaN, APPL PHYS L, 79(1), 2001, pp. 69-71
Arsenic-doped GaN grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Cheng, TS Davis, CS Campion, RP Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Arsenic-doped GaN grown by molecular beam epitaxy, J CRYST GR, 219(4), 2000, pp. 327-334
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
Authors: Xu, HZ Wang, ZG Harrison, I Bell, A Ansell, BJ Winser, AJ Cheng, TS Foxon, CT Kawabe, M
Citation: Hz. Xu et al., Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy, J CRYST GR, 217(3), 2000, pp. 228-232
Strong blue emission from As doped GaN grown by molecular beam epitaxy
Authors: Winser, AJ Novikov, SV Davis, CS Cheng, TS Foxon, CT Harrison, I
Citation: Aj. Winser et al., Strong blue emission from As doped GaN grown by molecular beam epitaxy, APPL PHYS L, 77(16), 2000, pp. 2506-2508
Risultati: 1-13 |