Authors:
Ziegler, Y
Daudrix, V
Droz, C
Platz, R
Wyrsch, N
Shah, A
Citation: Y. Ziegler et al., More stable low gap a-Si : H layers deposited by PE-CVD at moderately hightemperature with hydrogen dilution, SOL EN MAT, 66(1-4), 2001, pp. 413-419
Authors:
Shah, A
Vallat-Sauvain, E
Torres, P
Meier, J
Kroll, U
Hof, C
Droz, C
Goerlitzer, M
Wyrsch, N
Vanecek, M
Citation: A. Shah et al., Intrinsic microcrystalline silicon (mu c-Si : H) deposited by VHF-GD (veryhigh frequency-glow discharge): a new material for photovoltaics and optoelectronics, MAT SCI E B, 69, 2000, pp. 219-226
Authors:
Wyrsch, N
Feitknecht, L
Droz, C
Torres, P
Shah, A
Poruba, A
Vanecek, M
Citation: N. Wyrsch et al., Hydrogenated microcrystalline silicon: how to correlate layer properties and solar cell performance, J NON-CRYST, 266, 2000, pp. 1099-1103
Citation: C. Hof et al., Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si : H solar cells, J NON-CRYST, 266, 2000, pp. 1114-1118
Authors:
Vallat-Sauvain, E
Kroll, U
Meier, J
Wyrsch, N
Shah, A
Citation: E. Vallat-sauvain et al., Microstructure and surface roughness of microcrystalline silicon prepared by very high frequency-glow discharge using hydrogen dilution, J NON-CRYST, 266, 2000, pp. 125-130
Citation: C. Droz et al., Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous silicon, J NON-CRYST, 266, 2000, pp. 319-324