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Results: 1-25 | 26-37
Results: 1-25/37
REDUCTION OF POINT-DEFECTS AND FORMATION OF ABRUPT HETEROINTERFACES IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GAAS AND GAP UNDER ATOMIC-HYDROGEN IRRADIATION
Authors: YOKOZEKI M YONEZU H TSUJI T AIZAWA K OHSHIMA N
Citation: M. Yokozeki et al., REDUCTION OF POINT-DEFECTS AND FORMATION OF ABRUPT HETEROINTERFACES IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GAAS AND GAP UNDER ATOMIC-HYDROGEN IRRADIATION, JPN J A P 1, 37(9A), 1998, pp. 4726-4731
POLED POLYMER ETALON LIGHT-MODULATOR ON INTEGRATED-CIRCUITS
Authors: HARADA K MUNAKATA K ITOH M YOSHIKAWA N YONEZU H UMEGAKI S YATAGAI T
Citation: K. Harada et al., POLED POLYMER ETALON LIGHT-MODULATOR ON INTEGRATED-CIRCUITS, JPN J A P 1, 37(8), 1998, pp. 4393-4396
A NOVEL RETINA CHIP WITH SIMPLE WIRING FOR EDGE EXTRACTION
Authors: IKEDA H TSUJI K ASAI T YONEZU H SHIN JK
Citation: H. Ikeda et al., A NOVEL RETINA CHIP WITH SIMPLE WIRING FOR EDGE EXTRACTION, IEEE photonics technology letters, 10(2), 1998, pp. 261-263
DESIGN AND CONSTRUCTION OF THE LHD PLASMA VACUUM VESSEL
Authors: INOUE N KOMORI A HAYASHI H YONEZU H IIMA M SAKAMOTO R KUBOTA Y SAGARA A AKAISHI K NODA N OHYABU N MOTOJIMA O
Citation: N. Inoue et al., DESIGN AND CONSTRUCTION OF THE LHD PLASMA VACUUM VESSEL, Fusion engineering and design, 41, 1998, pp. 331-336
SELF-ORGANIZING NETWORK FOR FEATURE-MAP FORMATION - ANALOG INTEGRATED-CIRCUIT ROBUST TO DEVICE AND CIRCUIT MISMATCH
Authors: YONEZU H TSUJI K SUDO D SHIN JK
Citation: H. Yonezu et al., SELF-ORGANIZING NETWORK FOR FEATURE-MAP FORMATION - ANALOG INTEGRATED-CIRCUIT ROBUST TO DEVICE AND CIRCUIT MISMATCH, Computers & electrical engineering, 24(1-2), 1998, pp. 63-73
INITIAL GROWTH OF GAN ON SAPPHIRE(0001) USING AN AMORPHOUS BUFFER LAYER FORMED AT ROOM-TEMPERATURE BY RF-MBE
Authors: OHSHIMA N YONEZU H YAMAHIRA S PAK K
Citation: N. Ohshima et al., INITIAL GROWTH OF GAN ON SAPPHIRE(0001) USING AN AMORPHOUS BUFFER LAYER FORMED AT ROOM-TEMPERATURE BY RF-MBE, Journal of crystal growth, 190, 1998, pp. 275-281
STUDY OF THE PYROLYSIS OF TERTIARYBUTYLHYDRAZINE AND GAN FILM GROWTH
Authors: NISHIDE S YOSHIMURA T TAKAMATSU Y ICHIGE A PAK K OHSHIMA N YONEZU H
Citation: S. Nishide et al., STUDY OF THE PYROLYSIS OF TERTIARYBUTYLHYDRAZINE AND GAN FILM GROWTH, Journal of crystal growth, 190, 1998, pp. 325-329
GENERATION AND SUPPRESSION PROCESS OF CRYSTALLINE DEFECTS IN GAP LAYERS GROWN ON MISORIENTED SI(100) SUBSTRATES
Authors: TAKAGI Y YONEZU H SAMONJI K TSUJI T OHSHIMA N
Citation: Y. Takagi et al., GENERATION AND SUPPRESSION PROCESS OF CRYSTALLINE DEFECTS IN GAP LAYERS GROWN ON MISORIENTED SI(100) SUBSTRATES, Journal of crystal growth, 187(1), 1998, pp. 42-50
OPTICAL AND STRUCTURAL CHARACTERIZATION OF ZNSE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES WITH AND WITHOUT GAAS BUFFER LAYERS
Authors: LUYOALVARADO J MELENDEZLIRA M LOPEZLOPEZ M HERNANDEZCALDERON I CONSTANTINO ME NAVARROCONTRERAS H VIDAL MA TAKAGI Y SAMONJI K YONEZU H
Citation: J. Luyoalvarado et al., OPTICAL AND STRUCTURAL CHARACTERIZATION OF ZNSE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES WITH AND WITHOUT GAAS BUFFER LAYERS, Journal of applied physics, 84(3), 1998, pp. 1551-1557
DEFECT-CONTROLLED SELECTIVE EPITAXIAL-GROWTH OF GAP ON SI BY MIGRATION-ENHANCED EPITAXY UNDER ATOMIC-HYDROGEN IRRADIATION
Authors: TSUJI T YONEZU H YOKOZEKI M TAKAGI Y FUJIMOTO Y OHSHIMA N
Citation: T. Tsuji et al., DEFECT-CONTROLLED SELECTIVE EPITAXIAL-GROWTH OF GAP ON SI BY MIGRATION-ENHANCED EPITAXY UNDER ATOMIC-HYDROGEN IRRADIATION, JPN J A P 1, 36(9A), 1997, pp. 5431-5435
A NOVEL OPTICAL ADAPTIVE NEURO-DEVICE USING A SPLIT-GATE MOS-TRANSISTOR
Authors: SHIN JK IO E TSUJI K SUGIURA T YONEZU H OHSHIMA N
Citation: Jk. Shin et al., A NOVEL OPTICAL ADAPTIVE NEURO-DEVICE USING A SPLIT-GATE MOS-TRANSISTOR, JPN J A P 1, 36(3B), 1997, pp. 1407-1410
REDUCTION OF THREADING DISLOCATION DENSITY AND SUPPRESSION OF CRACK FORMATION IN INXGA1-XP(X-SIMILAR-TO-0.5) GROWN ON SI(100) USING STRAINED SHORT-PERIOD SUPERLATTICES
Authors: TAKAGI Y YONEZU H UESUGI S OHSHIMA N
Citation: Y. Takagi et al., REDUCTION OF THREADING DISLOCATION DENSITY AND SUPPRESSION OF CRACK FORMATION IN INXGA1-XP(X-SIMILAR-TO-0.5) GROWN ON SI(100) USING STRAINED SHORT-PERIOD SUPERLATTICES, JPN J A P 2, 36(2B), 1997, pp. 187-189
PERSPECTIVES ON THE ROLE OF THE LATERAL PTERYGOID MUSCLE AND THE SPHENOMANDIBULAR LIGAMENT IN TEMPOROMANDIBULAR-JOINT FUNCTION
Authors: ABE S OUCHI Y IDE Y YONEZU H
Citation: S. Abe et al., PERSPECTIVES ON THE ROLE OF THE LATERAL PTERYGOID MUSCLE AND THE SPHENOMANDIBULAR LIGAMENT IN TEMPOROMANDIBULAR-JOINT FUNCTION, Cranio, 15(3), 1997, pp. 203-207
PASSIVATION OF MISFIT DISLOCATIONS BY ATOMIC-HYDROGEN IRRADIATION IN LATTICE-MISMATCHED HETEROEPITAXY
Authors: YOKOZEKI M YONEZU H TSUJI T OHSHIMA N
Citation: M. Yokozeki et al., PASSIVATION OF MISFIT DISLOCATIONS BY ATOMIC-HYDROGEN IRRADIATION IN LATTICE-MISMATCHED HETEROEPITAXY, Journal of crystal growth, 175, 1997, pp. 435-440
FUNDAMENTAL DEVICE AND CIRCUITS FOR SYNAPTIC CONNECTIONS IN SELF-ORGANIZING NEURAL NETWORKS
Authors: HOSONO K TSUJI K SHIBAO K IO E YONEZU H OHSHIMA N PAK K
Citation: K. Hosono et al., FUNDAMENTAL DEVICE AND CIRCUITS FOR SYNAPTIC CONNECTIONS IN SELF-ORGANIZING NEURAL NETWORKS, IEICE transactions on electronics, E79C(4), 1996, pp. 560-567
COOLING AND EXCITATION TESTS OF AN INNER VERTICAL COIL FOR THE LARGE HELICAL DEVICE
Authors: SATOW T MITO T TAKAHATA K YAMAMOTO J SATOH S NISHIMURA A YAMADA S YANAGI N CHIKARAISHI H IWAMOTO A TANAHASHI S IMAGAWA S TAMURA H YAMAZAKI K YAMAGUCHI S WATANABE K YAMADA H NODA N SAGARA A AKAISHI K KUBOTA Y INOUE N SUZUKI H MORISAKI T KITAGAWA S OHYABU N KOMORI A BABA T MORIUCHI S OHBA K IIMA M YONEZU H HAYASHI H TANIGUCHI Y OGAWA H TAMURA S OHTAKE I MOTOJIMA O MORIMOTO S TAKEO M SATO S NINOMIYA A IOKA S NAKAMOTO K UEDE T HOSHI Y
Citation: T. Satow et al., COOLING AND EXCITATION TESTS OF AN INNER VERTICAL COIL FOR THE LARGE HELICAL DEVICE, IEEE transactions on magnetics, 32(4), 1996, pp. 2244-2247
REDUCTION OF THREADING DISLOCATION DENSITY IN INP-ON-SI HETEROEPITAXYWITH STRAINED SHORT-PERIOD SUPERLATTICES
Authors: SAMONJI K YONEZU H TAKAGI Y IWAKI K OHSHIMA N SHIN JK PAK K
Citation: K. Samonji et al., REDUCTION OF THREADING DISLOCATION DENSITY IN INP-ON-SI HETEROEPITAXYWITH STRAINED SHORT-PERIOD SUPERLATTICES, Applied physics letters, 69(1), 1996, pp. 100-102
AN OPTICAL ADAPTIVE DEVICE AND ITS APPLICATION TO A COMPETITIVE LEARNING CIRCUIT
Authors: TSUJI K YONEZU H HOSONO K SHIBAO K OHSHIMA N PAK K
Citation: K. Tsuji et al., AN OPTICAL ADAPTIVE DEVICE AND ITS APPLICATION TO A COMPETITIVE LEARNING CIRCUIT, JPN J A P 1, 34(2B), 1995, pp. 1056-1060
REALIZATION OF 2-DIMENSIONAL GROWTH AND SUPPRESSION OF THREADING DISLOCATION GENERATION IN (INP)(1)(GAAS)(N) QUATERNARY STRAINED SHORT-PERIOD SUPERLATTICES GROWN ON GAAS
Authors: HAYASHIDA K TAKAGI Y SAMONJI K YONEZU H YOKOZEKI M OHSHIMA N PAK K
Citation: K. Hayashida et al., REALIZATION OF 2-DIMENSIONAL GROWTH AND SUPPRESSION OF THREADING DISLOCATION GENERATION IN (INP)(1)(GAAS)(N) QUATERNARY STRAINED SHORT-PERIOD SUPERLATTICES GROWN ON GAAS, JPN J A P 2, 34(11A), 1995, pp. 1442-1444
PHOTOREFLECTANCE EVALUATION OF INTERNAL ELECTRIC-FIELDS IN GAAS SI/GAAS AND ALAS/SI/ALAS HETEROSTRUCTURES/
Authors: MELENDEZLIRA M JIMENEZSANDOVAL S LOPEZLOPEZ M HERNANDEZCALDERON I KAWAI T PACK K YONEZU H
Citation: M. Melendezlira et al., PHOTOREFLECTANCE EVALUATION OF INTERNAL ELECTRIC-FIELDS IN GAAS SI/GAAS AND ALAS/SI/ALAS HETEROSTRUCTURES/, Revista Mexicana de Fisica, 41(1), 1995, pp. 95-105
SUPPRESSION OF THREADING DISLOCATION GENERATION IN GAAS-ON-SI WITH STRAINED SHORT-PERIOD SUPERLATTICES
Authors: TAKAGI Y YONEZU H KAWAI T HAYASHIDA K SAMONJI K OHSHIMA N PAK K
Citation: Y. Takagi et al., SUPPRESSION OF THREADING DISLOCATION GENERATION IN GAAS-ON-SI WITH STRAINED SHORT-PERIOD SUPERLATTICES, Journal of crystal growth, 150(1-4), 1995, pp. 677-680
A STUDY ON IN-SITU MASKLESS SELECTIVE EPITAXY OF GAAS BY A LOW-ENERGYGA FOCUSED ION-BEAM WITH AN AS-4 MOLECULAR-BEAM
Authors: SAITOH I PAK K INOUE Y OHSHIMA N YONEZU H
Citation: I. Saitoh et al., A STUDY ON IN-SITU MASKLESS SELECTIVE EPITAXY OF GAAS BY A LOW-ENERGYGA FOCUSED ION-BEAM WITH AN AS-4 MOLECULAR-BEAM, Journal of crystal growth, 146(1-4), 1995, pp. 359-362
REDUCTION-MECHANISM OF THREADING DISLOCATION DENSITY IN GAAS EPILAYERGROWN ON SI SUBSTRATE BY HIGH-TEMPERATURE ANNEALING
Authors: TAKAGI Y YONEZU H HACHIYA Y PAK K
Citation: Y. Takagi et al., REDUCTION-MECHANISM OF THREADING DISLOCATION DENSITY IN GAAS EPILAYERGROWN ON SI SUBSTRATE BY HIGH-TEMPERATURE ANNEALING, JPN J A P 1, 33(6A), 1994, pp. 3368-3372
STRAIN RELAXATION PROCESS OF (INAS)(M)(GAAS)(N) STRAINED SHORT-PERIODSUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: KAWAI T YONEZU H SAITO D YOKOZEKI M PAK K
Citation: T. Kawai et al., STRAIN RELAXATION PROCESS OF (INAS)(M)(GAAS)(N) STRAINED SHORT-PERIODSUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(10), 1994, pp. 5617-5622
INCREASE OF CRITICAL THICKNESS AND OPTICAL-EMISSION RANGE IN (INAS)(1)(GAAS)(N) STRAINED SHORT-PERIOD SUPERLATTICES
Authors: SAITO D YONEZU H KAWAI T YOKOZEKI M PAK K
Citation: D. Saito et al., INCREASE OF CRITICAL THICKNESS AND OPTICAL-EMISSION RANGE IN (INAS)(1)(GAAS)(N) STRAINED SHORT-PERIOD SUPERLATTICES, JPN J A P 2, 33(9A), 1994, pp. 120001205-120001208
Risultati: 1-25 | 26-37