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Results: 1-11 |
Results: 11
FLUX TO VOLTAGE TRANSFER-FUNCTION AND NOISE IN DOUBLE RELAXATION OSCILLATION SQUIDS
Authors: CHEN GH ZHAI HY YANG QS
Citation: Gh. Chen et al., FLUX TO VOLTAGE TRANSFER-FUNCTION AND NOISE IN DOUBLE RELAXATION OSCILLATION SQUIDS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3477-3480
FABRICATION AND CHARACTER OF REPRODUCIBLE HIGH-QUALITY STEPS AND STEP-EDGE JUNCTIONS ON STO SUBSTRATES
Authors: ZHAI HY CHEN GH XU FZ WANG J WANG RF YANG QS
Citation: Hy. Zhai et al., FABRICATION AND CHARACTER OF REPRODUCIBLE HIGH-QUALITY STEPS AND STEP-EDGE JUNCTIONS ON STO SUBSTRATES, Physica. C, Superconductivity, 282, 1997, pp. 2471-2472
RANGE PROFILES OF FLUORINE IMPLANTED YBCO FILMS
Authors: ZHAI HY YANG QS TAN CY WANG FX ZHOU YL
Citation: Hy. Zhai et al., RANGE PROFILES OF FLUORINE IMPLANTED YBCO FILMS, Journal of physics. D, Applied physics, 30(6), 1997, pp. 952-956
MOBILITY OF HG+ AND BR+ IMPLANTED IN QUARTZ
Authors: WANG KM SHI BR ZHAI HY MA SJ LIU XD LIU JT LIU XJ
Citation: Km. Wang et al., MOBILITY OF HG+ AND BR+ IMPLANTED IN QUARTZ, Australian journal of physics, 49(3), 1996, pp. 705-711
DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI
Authors: WANG KM MA SJ SHI BR ZHAI HY LIU XD LIU JT LIU XJ
Citation: Km. Wang et al., DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI, Solid state communications, 93(2), 1995, pp. 155-158
LONGITUDINAL AND TRANSVERSE MOMENTS OF THE DISTRIBUTION OF MEV TI IONS IMPLANTED IN SI MEASURED BY SIMS
Authors: WANG KM QU BD SHI BR ZHAI HY MA SJ XU TB ZHU PR ZHAO QT
Citation: Km. Wang et al., LONGITUDINAL AND TRANSVERSE MOMENTS OF THE DISTRIBUTION OF MEV TI IONS IMPLANTED IN SI MEASURED BY SIMS, Journal of physics. D, Applied physics, 28(6), 1995, pp. 1158-1161
DAMAGE BEHAVIOR OF SILICON BY MEV GE+ IRRADIATION UNDER TILTED ANGLE
Authors: WANG KM SHI BR MA SJ LIU XD ZHAI HY XU TB ZHU PR ZHAO QT
Citation: Km. Wang et al., DAMAGE BEHAVIOR OF SILICON BY MEV GE+ IRRADIATION UNDER TILTED ANGLE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 3027-3030
INVESTIGATION OF DEPTH DISTRIBUTIONS OF DEFECTS IN SI CREATED BY HIGH-ENERGY TI IONS
Authors: WANG KM SHI BR MA SJ LIU XD ZHAI HY XU TB ZHU PR ZHAO QT
Citation: Km. Wang et al., INVESTIGATION OF DEPTH DISTRIBUTIONS OF DEFECTS IN SI CREATED BY HIGH-ENERGY TI IONS, Vacuum, 45(9), 1994, pp. 955-958
DAMAGE AND ANNEALING OF POTASSIUM TITANYL PHOSPHATE AFTER ER+ AND YB+IMPLANTATION
Authors: WANG KM SHI BR ZHAI HY LIU XD LIU YG LI Y LI JS
Citation: Km. Wang et al., DAMAGE AND ANNEALING OF POTASSIUM TITANYL PHOSPHATE AFTER ER+ AND YB+IMPLANTATION, Solid state communications, 92(12), 1994, pp. 997-999
DEPTH DISTRIBUTIONS OF HEAVY-IONS IN LINBO3 AND KTIOPO4 AT TILTED ANGLE IMPLANTATION
Authors: WANG KM SHI BR QU BD ZHAI HY DING PJ WANG W LIU YG
Citation: Km. Wang et al., DEPTH DISTRIBUTIONS OF HEAVY-IONS IN LINBO3 AND KTIOPO4 AT TILTED ANGLE IMPLANTATION, Canadian journal of physics, 72(9-10), 1994, pp. 550-553
DEPTH DISTRIBUTION AND THERMAL-STABILITY OF IMPLANTED HG IONS IN SILICON
Authors: WANG KM SHI BR MA SJ ZHAI HY LIU XD LIU JT LIU XJ
Citation: Km. Wang et al., DEPTH DISTRIBUTION AND THERMAL-STABILITY OF IMPLANTED HG IONS IN SILICON, Journal of applied physics, 74(4), 1993, pp. 2306-2309
Risultati: 1-11 |