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REALIZATION OF SILICON QUANTUM WIRES BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION
Authors: LIU JL SHI Y WANG F LU Y ZHANG R GU GL HAN P HU LQ ZHENG YD
Citation: Jl. Liu et al., REALIZATION OF SILICON QUANTUM WIRES BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION, Applied physics A: Materials science & processing, 63(4), 1996, pp. 371-375
GROWTH-KINETICS STUDY OF SIGE ALLOYS DEPOSITED BY RAPID THERMAL-PROCESS, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: GU SL ZHENG YD ZHANG R WANG RH
Citation: Sl. Gu et al., GROWTH-KINETICS STUDY OF SIGE ALLOYS DEPOSITED BY RAPID THERMAL-PROCESS, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION, Physica. B, Condensed matter, 229(1), 1996, pp. 74-78
SIMULATION-MODEL TO VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SIGE ALLOY
Authors: GU SL WANG RH ZHANG R ZHENG YD
Citation: Sl. Gu et al., SIMULATION-MODEL TO VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SIGE ALLOY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3256-3260
OPTICAL-PROPERTIES OF GAN FILM GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: ZHANG R YANG K QIN LH SHEN B SHI HT SHI Y GU SL ZHENG YD HUANG ZC CHEN JC
Citation: R. Zhang et al., OPTICAL-PROPERTIES OF GAN FILM GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 840-843
INFLUENCE OF TRANSITION-METAL IMPURITIES ON OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON
Authors: SHEN B ZHANG R SHI Y ZHENG YD SEKIGUCHI T SUMINO K
Citation: B. Shen et al., INFLUENCE OF TRANSITION-METAL IMPURITIES ON OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 890-895
SOLID-PHASE EPITAXY OF BETA-FESI2 ON SI(100)
Authors: CHEN H HAN P HUANG XD ZHENG YD
Citation: H. Chen et al., SOLID-PHASE EPITAXY OF BETA-FESI2 ON SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 905-907
ULTRAFINE SILICON QUANTUM WIRES FABRICATED BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION
Authors: SHI Y LIU JL WANG F LU Y ZHANG R GU SL HAN P HU LQ ZHENG YD LIN CY DU DA
Citation: Y. Shi et al., ULTRAFINE SILICON QUANTUM WIRES FABRICATED BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1194-1198
REALIZATION OF SILICON QUANTUM WIRES BASED ON SI SIGE/SI HETEROSTRUCTURE/
Authors: LIU JL SHI Y WANG F LU Y GU SL ZHENG YD
Citation: Jl. Liu et al., REALIZATION OF SILICON QUANTUM WIRES BASED ON SI SIGE/SI HETEROSTRUCTURE/, Zeitschrift fur Physik. B, Condensed matter, 100(4), 1996, pp. 489-491
CURRENT-VOLTAGE CHARACTERISTICS AND X-RAY-DIFFRACTION STUDY OF PD SI1-XGEX SCHOTTKY CONTACTS/
Authors: HE L SHI ZQ ZHENG YD
Citation: L. He et al., CURRENT-VOLTAGE CHARACTERISTICS AND X-RAY-DIFFRACTION STUDY OF PD SI1-XGEX SCHOTTKY CONTACTS/, Journal of electronic materials, 25(3), 1996, pp. 501-505
PRECIPITATION OF CU AND NI ON FRANK-TYPE PARTIAL DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON
Authors: SHEN B ZHANG R SHI Y ZHENG YD SEKIGUCHI T SUMINO K
Citation: B. Shen et al., PRECIPITATION OF CU AND NI ON FRANK-TYPE PARTIAL DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON, Chinese Physics Letters, 13(4), 1996, pp. 289-292
PHOTOREFLECTANCE STUDY OF GAN FILMS ON SAPPHIRE SUBSTRATE
Authors: QIN LH YANG K ZHENG YD ZHANG R DAI XJ FENG D HUANG ZC CHEN JC
Citation: Lh. Qin et al., PHOTOREFLECTANCE STUDY OF GAN FILMS ON SAPPHIRE SUBSTRATE, Chinese Physics Letters, 13(2), 1996, pp. 153-156
PHOTOCURRENT STUDIES OF ULTRAVIOLET DETECTOR BASED ON GALLIUM NITRIDEEPILAYER
Authors: YANG K QIN LH ZHANG R SHEN B ZHENG YD HUANG ZC CHEN JC
Citation: K. Yang et al., PHOTOCURRENT STUDIES OF ULTRAVIOLET DETECTOR BASED ON GALLIUM NITRIDEEPILAYER, Chinese Physics Letters, 13(11), 1996, pp. 874-877
PRECIPITATION OF CU, NI, AND FE ON FRANK-TYPE PARTIAL DISLOCATIONS INCZOCHRALSKI-GROWN SILICON
Authors: SHEN B SEKIGUCHI T ZHANG R SHI Y ZHENG YD SUMINO K
Citation: B. Shen et al., PRECIPITATION OF CU, NI, AND FE ON FRANK-TYPE PARTIAL DISLOCATIONS INCZOCHRALSKI-GROWN SILICON, Physica status solidi. a, Applied research, 155(2), 1996, pp. 321-332
TEMPERATURE-DEPENDENT INVESTIGATION ON OPTICALLY-ACTIVE PROCESSES OF HIGHER-ORDER BANDS IN IRRADIATED SILICON
Authors: SHI Y WU FM ZHENG YD SUEZAWA M IMAI M SUMINO K
Citation: Y. Shi et al., TEMPERATURE-DEPENDENT INVESTIGATION ON OPTICALLY-ACTIVE PROCESSES OF HIGHER-ORDER BANDS IN IRRADIATED SILICON, Physica status solidi. a, Applied research, 154(2), 1996, pp. 789-796
SEMICONDUCTING GE-SI-FE ALLOY GROWN ON SI(100) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY
Authors: CHEN H HAN P HUANG XD HU LQ SHI Y ZHENG YD
Citation: H. Chen et al., SEMICONDUCTING GE-SI-FE ALLOY GROWN ON SI(100) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY, Applied physics letters, 69(13), 1996, pp. 1912-1914
STUDY OF DRY OXIDATION OF TRIANGLE-SHAPED SILICON NANOSTRUCTURE
Authors: LIU JL SHI Y WANG F LU Y GU SL ZHANG R ZHENG YD
Citation: Jl. Liu et al., STUDY OF DRY OXIDATION OF TRIANGLE-SHAPED SILICON NANOSTRUCTURE, Applied physics letters, 69(12), 1996, pp. 1761-1763
PROPERTIES OF SCHOTTKY CONTACT OF AL ON SIGE ALLOYS
Authors: JIANG RL LIU JL LI J SHI Y ZHENG YD
Citation: Rl. Jiang et al., PROPERTIES OF SCHOTTKY CONTACT OF AL ON SIGE ALLOYS, Applied physics letters, 68(8), 1996, pp. 1123-1125
A METHOD FOR FABRICATING SILICON QUANTUM WIRES BASED ON SIGE SI HETEROSTRUCTURE/
Authors: LIU JL SHI Y WANG F LU Y ZHANG R HAN P GU SL ZHENG YD
Citation: Jl. Liu et al., A METHOD FOR FABRICATING SILICON QUANTUM WIRES BASED ON SIGE SI HETEROSTRUCTURE/, Applied physics letters, 68(3), 1996, pp. 352-354
PRECIPITATION BEHAVIORS OF CU AND FE ON FRANK-TYPE PARTIAL DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON
Authors: SHEN B ZHANG R SHI Y ZHENG YD SEKIGUCHI T SUMINO K
Citation: B. Shen et al., PRECIPITATION BEHAVIORS OF CU AND FE ON FRANK-TYPE PARTIAL DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON, Applied physics letters, 68(2), 1996, pp. 214-216
FABRICATION OF SILICON QUANTUM WIRES BY ANISOTROPIC WET CHEMICAL ETCHING AND THERMAL-OXIDATION
Authors: LIU JL SHI Y WANG F ZHANG R HAN P MAO BH ZHENG YD
Citation: Jl. Liu et al., FABRICATION OF SILICON QUANTUM WIRES BY ANISOTROPIC WET CHEMICAL ETCHING AND THERMAL-OXIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2137-2138
INFLUENCE OF THE POSITION OF THE FERMI-LEVEL ON AN INFRARED ACTIVE DEFECT IN IRRADIATED SILICON
Authors: SHI Y WU FM ZHENG YD SUEZAWA M SUMINO K
Citation: Y. Shi et al., INFLUENCE OF THE POSITION OF THE FERMI-LEVEL ON AN INFRARED ACTIVE DEFECT IN IRRADIATED SILICON, Chinese Physics Letters, 12(5), 1995, pp. 289-292
OPTICAL CHARACTERIZATION OF GAN FILMS BY PHOTOREFLECTANCE AND PHOTOCURRENT MEASUREMENT
Authors: QIN LH ZHENG YD FENG D HUANG ZC CHEN JC
Citation: Lh. Qin et al., OPTICAL CHARACTERIZATION OF GAN FILMS BY PHOTOREFLECTANCE AND PHOTOCURRENT MEASUREMENT, Journal of applied physics, 78(12), 1995, pp. 7424-7426
MULTILAYERED COATINGS FOR PROTECTING CARBON-CARBON COMPOSITES FROM OXIDATION
Authors: GUO ML SHEN K ZHENG YD
Citation: Ml. Guo et al., MULTILAYERED COATINGS FOR PROTECTING CARBON-CARBON COMPOSITES FROM OXIDATION, Carbon, 33(4), 1995, pp. 449-453
DIRECT OBSERVATION OF TRANSFERRED-ELECTRON EFFECT IN GAN
Authors: HUANG ZC GOLDBERG R CHEN JC ZHENG YD MOTT DB SHU P
Citation: Zc. Huang et al., DIRECT OBSERVATION OF TRANSFERRED-ELECTRON EFFECT IN GAN, Applied physics letters, 67(19), 1995, pp. 2825-2826
GENERAL-THEORY OF LINEAR QUANTUM TRANSFORMATION OF BARGMANN-FOCK SPACE
Authors: ZHENG YD TANG Z
Citation: Yd. Zheng et Z. Tang, GENERAL-THEORY OF LINEAR QUANTUM TRANSFORMATION OF BARGMANN-FOCK SPACE, Nuovo cimento della Societa italiana di fisica. B, Relativity, classical and statistical physics, 109(4), 1994, pp. 387-401
Risultati: 1-25 | 26-50 | 51-66