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Results: 1-15 |
Results: 15
Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy
Authors: Kuznetsov, N Tsagaraki, K Bauman, D Morozov, A Nikitina, I Ivantsov, V Zekentes, K
Citation: N. Kuznetsov et al., Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 345-347
Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC
Authors: Vassilevski, K Zekentes, K Tsagaraki, K Constantinidis, G Nikitina, I
Citation: K. Vassilevski et al., Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 370-373
Improved Al/Si ohmic contacts to p-type 4H-SiC
Authors: Kakanakov, R Kassamakova, L Kassamakov, I Zekentes, K Kuznetsov, N
Citation: R. Kakanakov et al., Improved Al/Si ohmic contacts to p-type 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 374-377
Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode (vol 37, pg 466, 2001)
Authors: Vassilevski, KV Zorenko, AV Zekentes, K
Citation: Kv. Vassilevski et al., Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode (vol 37, pg 466, 2001), ELECTR LETT, 37(9), 2001, pp. 607-607
Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode
Authors: Vassilevski, KV Zorenko, AV Zekentes, K
Citation: Kv. Vassilevski et al., Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode, ELECTR LETT, 37(7), 2001, pp. 466-467
Experimental determination of electron drift velocity in 4H-SiC p(+)-n-n(+) avalanche diodes
Authors: Vassilevski, KV Zekentes, K Zorenko, AV Romanov, LP
Citation: Kv. Vassilevski et al., Experimental determination of electron drift velocity in 4H-SiC p(+)-n-n(+) avalanche diodes, IEEE ELEC D, 21(10), 2000, pp. 485-487
Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 mu m atmospheric window
Authors: Alause, H Knap, W Robert, JL Planel, R Thierry-Mieg, V Julien, FH Zekentes, K Mosser, V
Citation: H. Alause et al., Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 mu m atmospheric window, SEMIC SCI T, 15(7), 2000, pp. 724-727
Fabrication and electrical characterization of 4H-SiC p(+)-n-n(+) diodes with low differential resistance
Authors: Vassilevski, K Zekentes, K Constantinidis, G Strel'chuk, A
Citation: K. Vassilevski et al., Fabrication and electrical characterization of 4H-SiC p(+)-n-n(+) diodes with low differential resistance, SOL ST ELEC, 44(7), 2000, pp. 1173-1177
Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
Authors: Kayambaki, M Tsagaraki, K Cimalla, V Zekentes, K Yakimova, R
Citation: M. Kayambaki et al., Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals, J ELCHEM SO, 147(7), 2000, pp. 2744-2748
Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electrondiffraction
Authors: Cimalla, V Zekentes, K
Citation: V. Cimalla et K. Zekentes, Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electrondiffraction, APPL PHYS L, 77(10), 2000, pp. 1452-1454
Nucleation behavior during the first stages of SiC growth on different substrates
Authors: Hurtos, E Rodriguez-Viejo, J Clavaguera-Mora, MT Zekentes, K
Citation: E. Hurtos et al., Nucleation behavior during the first stages of SiC growth on different substrates, J PHYS IV, 9(P8), 1999, pp. 1069-1074
Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
Authors: Vasilevskii, KV Rendakova, SV Nikitina, IP Babanin, AI Andreev, AN Zekentes, K
Citation: Kv. Vasilevskii et al., Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers, SEMICONDUCT, 33(11), 1999, pp. 1206-1211
Study of annealing conditions on the formation of ohmic contacts on p+4H-SiC layers grown by CVD and LPE
Authors: Vassilevski, KV Constantinidis, G Papanicolaou, N Martin, N Zekentes, K
Citation: Kv. Vassilevski et al., Study of annealing conditions on the formation of ohmic contacts on p+4H-SiC layers grown by CVD and LPE, MAT SCI E B, 61-2, 1999, pp. 296-300
Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates
Authors: Hurtos, E Rodriguez-Viejo, J Bassas, J Clavaguera-Mora, MT Zekentes, K
Citation: E. Hurtos et al., Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates, MAT SCI E B, 61-2, 1999, pp. 549-552
Surfactant-mediated MBE growth of beta-SiC on Si substrates
Authors: Zekentes, K Tsagaraki, K
Citation: K. Zekentes et K. Tsagaraki, Surfactant-mediated MBE growth of beta-SiC on Si substrates, MAT SCI E B, 61-2, 1999, pp. 559-562
Risultati: 1-15 |