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Results: 1-13 |
Results: 13
A unique ECR broad beam source for thin film processing
Authors: Zeuner, M Scholze, F Neumann, H Chasse, T Otto, G Roth, D Hellmich, A Ocker, B
Citation: M. Zeuner et al., A unique ECR broad beam source for thin film processing, SURF COAT, 142, 2001, pp. 11-20
Optimisation and characterisation of a TCP type RF broad beam ion source
Authors: Zeuner, M Scholze, F Dathe, B Neumann, H
Citation: M. Zeuner et al., Optimisation and characterisation of a TCP type RF broad beam ion source, SURF COAT, 142, 2001, pp. 39-48
Rf magnetron sputtering of polytetrafluoroethylene under various conditions
Authors: Biederman, H Zeuner, M Zalman, J Bilkova, P Slavinska, D Stelmasuk, V Boldyreva, A
Citation: H. Biederman et al., Rf magnetron sputtering of polytetrafluoroethylene under various conditions, THIN SOL FI, 392(2), 2001, pp. 208-213
0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs
Authors: Enciso, M Aniel, F Crozat, P Adde, R Zeuner, M Fox, A Hackbarth, T
Citation: M. Enciso et al., 0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs, ELECTR LETT, 37(17), 2001, pp. 1089-1090
Texture and epitaxy by ion beam assisted deposition of gallium nitride
Authors: Gerlach, JW Schwertberger, R Schrupp, D Rauschenbach, B Neumann, H Zeuner, M
Citation: Jw. Gerlach et al., Texture and epitaxy by ion beam assisted deposition of gallium nitride, SURF COAT, 128, 2000, pp. 286-291
SiGe-based FETs: buffer issues and device results
Authors: Herzog, HJ Hackbarth, T Hock, G Zeuner, M Konig, U
Citation: Hj. Herzog et al., SiGe-based FETs: buffer issues and device results, THIN SOL FI, 380(1-2), 2000, pp. 36-41
Alternatives to thick MBE-grown relaxed SiGe buffers
Authors: Hackbarth, T Herzog, HJ Zeuner, M Hock, G Fitzgerald, BA Bulsara, M Rosenblad, C von Kanel, H
Citation: T. Hackbarth et al., Alternatives to thick MBE-grown relaxed SiGe buffers, THIN SOL FI, 369(1-2), 2000, pp. 148-151
Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's
Authors: Aniel, F Zerounian, N Adde, R Zeuner, M Hackbarth, T Konig, U
Citation: F. Aniel et al., Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's, IEEE DEVICE, 47(7), 2000, pp. 1477-1483
High-frequency SiGe-n-MODFET for microwave applications
Authors: Zeuner, M Hackbarth, T Hock, G Behammer, D Konig, U
Citation: M. Zeuner et al., High-frequency SiGe-n-MODFET for microwave applications, IEEE MICR G, 9(10), 1999, pp. 410-412
Spatially resolved measurements of plasma parameters is a broad-beam ion source
Authors: Flamm, D Zeuner, M
Citation: D. Flamm et M. Zeuner, Spatially resolved measurements of plasma parameters is a broad-beam ion source, SURF COAT, 119, 1999, pp. 1089-1092
n- and p-type SiGe HFETs and circuits
Authors: Konig, U Zeuner, M Hock, G Hackbarth, T Gluck, M Ostermann, T Saxarra, M
Citation: U. Konig et al., n- and p-type SiGe HFETs and circuits, SOL ST ELEC, 43(8), 1999, pp. 1383-1388
Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors
Authors: Hackbarth, T Hoeck, G Herzog, HJ Zeuner, M
Citation: T. Hackbarth et al., Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors, J CRYST GR, 202, 1999, pp. 734-738
Comparison of lateral and vertical Si-MOSFETs with ultra short channels
Authors: Behammer, D Zeuner, M Hackbarth, T Herzog, J Schafer, M Grabolla, T
Citation: D. Behammer et al., Comparison of lateral and vertical Si-MOSFETs with ultra short channels, THIN SOL FI, 336(1-2), 1998, pp. 313-318
Risultati: 1-13 |