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Results:
1-16
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Results: 16
Authors:
Wang, KM
Shi, BR
Lu, F
Meng, MQ
Liu, XD
Hu, H
Chen, F
Xu, TB
Zhu, PR
Citation: Km. Wang et al., The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions, RADIAT EFF, 153(3), 2001, pp. 271-279
Authors:
Wang, SB
Zhu, PR
Citation: Sb. Wang et Pr. Zhu, Structural and electrical properties of CVD diamond films doped by N+ implantation, MAT SCI E B, 76(2), 2000, pp. 83-86
Authors:
Wang, SB
Zhu, PR
Citation: Sb. Wang et Pr. Zhu, Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon, MAT SCI E B, 72(2-3), 2000, pp. 142-145
Authors:
Wang, SB
Liang, H
Zhu, PR
Citation: Sb. Wang et al., Preferential growth of C54TiSi(2) by metal vapor vacuum arc ion source implantation and post-annealing, SURF COAT, 131(1-3), 2000, pp. 84-87
Authors:
Wang, SB
Zhu, PR
Wang, WJ
Citation: Sb. Wang et al., The microstructure and tribological properties of copper surfaces implanted with carbon ions, SURF COAT, 123(2-3), 2000, pp. 173-176
Authors:
Wang, SB
Zhu, PR
Wang, YG
Feng, KA
Citation: Sb. Wang et al., Influences of H+ implantation on the boron-doped synthesized by chemical vapor deposition diamond films, CHIN PHYS L, 17(9), 2000, pp. 686-688
Authors:
Wang, SB
Zhu, PR
Feng, K
Citation: Sb. Wang et al., Passivation of boron in the doped CVD diamond films by H+ implantation, MATER CH PH, 64(1), 2000, pp. 10-13
Authors:
Wang, SB
Liang, H
Zhu, PR
Citation: Sb. Wang et al., Characteristics of CrSi2 and Cr(Ni)Si-2 synthesis in MEVVA ion source implantation and post-annealing processes, APPL SURF S, 153(2-3), 2000, pp. 108-113
Authors:
Wang, SB
Zhu, PR
Citation: Sb. Wang et Pr. Zhu, The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process, VACUUM, 59(4), 2000, pp. 919-926
Authors:
Wang, SB
Liang, H
Zhu, PR
Citation: Sb. Wang et al., Epitaxial growth of alloy Cr(Ni)Si-2 by metal vapour vacuum are ion sourceimplantation and post-annealing, VACUUM, 56(2), 2000, pp. 95-99
Authors:
Wang, SB
Liang, H
Zhu, PR
Citation: Sb. Wang et al., The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation, PHYS ST S-A, 179(1), 2000, pp. 95-101
Authors:
Yang, QB
Zhu, PR
Wu, XL
Huang, SY
Citation: Qb. Yang et al., Properties of concrete with a new type of saponin air-entraining agent, CEM CONCR R, 30(8), 2000, pp. 1313-1317
Authors:
Zhu, PR
Yamamoto, S
Miyashita, A
Wu, ZP
Narumi, K
Naramoto, H
Citation: Pr. Zhu et al., Semiconductor-metal phase transition in VO2 films synthesized on alpha-Al2O3 by oxygen-reactive deposition using a neodymium-doped yttrium aluminium garnet laser, PHIL MAG L, 79(8), 1999, pp. 603-608
Authors:
Zhang, HX
Jiang, YB
Meng, QB
Fei, YJ
Zhu, PR
Lin, ZD
Feng, KA
Citation: Hx. Zhang et al., The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films, APPL SURF S, 150(1-4), 1999, pp. 43-46
Authors:
Dai, ZN
Zhu, PR
Yamamoto, S
Miyashita, A
Narum, K
Naramoto, H
Citation: Zn. Dai et al., Pulsed laser deposition of ilmenite FeTiO3 epitaxial thin film onto sapphire substrate, THIN SOL FI, 339(1-2), 1999, pp. 114-116
Authors:
Zhu, PR
Yamamoto, S
Miyashita, A
Naramoto, H
Citation: Pr. Zhu et al., Pulsed laser deposition of VO2 single crystal thin films on sapphire substrates, CHIN PHYS L, 15(12), 1998, pp. 904-906
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