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Results: 1-14 |
Results: 14
A Faraday cage isolation structure for substrate crosstalk suppression
Authors: Wu, JH Scholvin, J del Alamo, JA Jenkins, KA
Citation: Jh. Wu et al., A Faraday cage isolation structure for substrate crosstalk suppression, IEEE MICR W, 11(10), 2001, pp. 410-412
Hydrogen degradation of InPHEMTs and GaAsPHEMTs
Authors: del Alamo, JA Blanchard, RR Mertens, SD
Citation: Ja. Del Alamo et al., Hydrogen degradation of InPHEMTs and GaAsPHEMTs, IEICE TR EL, E84C(10), 2001, pp. 1289-1293
RF power LDMOSFET on SOI
Authors: Fiorenza, JG Antoniadis, DA del Alamo, JA
Citation: Jg. Fiorenza et al., RF power LDMOSFET on SOI, IEEE ELEC D, 22(3), 2001, pp. 139-141
Technology for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
Authors: Knoch, J Appenzeller, J Lengeler, B Martel, R Solomon, P Avouris, P Dieker, C Lu, Y Wang, KL Scholvin, J del Alamo, JA
Citation: J. Knoch et al., Technology for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors, J VAC SCI A, 19(4), 2001, pp. 1737-1741
A 10 nm MOSFET concept
Authors: Appenzeller, J Martel, R Solomon, P Chan, K Avouris, P Knoch, J Benedict, J Tanner, M Thomas, S Wang, KL del Alamo, JA
Citation: J. Appenzeller et al., A 10 nm MOSFET concept, MICROEL ENG, 56(1-2), 2001, pp. 213-219
An insulator-lined silicon substrate-via technology with high aspect ratio
Authors: Wu, JH Scholvin, J del Alamo, JA
Citation: Jh. Wu et al., An insulator-lined silicon substrate-via technology with high aspect ratio, IEEE DEVICE, 48(9), 2001, pp. 2181-2183
Ultrathin 600 degrees C wet thermal silicon dioxide
Authors: Appenzeller, J del Alamo, JA Martel, R Chan, K Solomon, P
Citation: J. Appenzeller et al., Ultrathin 600 degrees C wet thermal silicon dioxide, EL SOLID ST, 3(2), 2000, pp. 84-86
Titanium hydride formation in Ti/Pt/Au-gated InPHEMTs
Authors: Blanchard, RR Cornet, A del Alamo, JA
Citation: Rr. Blanchard et al., Titanium hydride formation in Ti/Pt/Au-gated InPHEMTs, IEEE ELEC D, 21(9), 2000, pp. 424-426
Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InPHEMT's
Authors: Krupenin, S Blanchard, RR Somerville, MH del Alamo, JA Duh, KG Chao, PC
Citation: S. Krupenin et al., Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InPHEMT's, IEEE DEVICE, 47(8), 2000, pp. 1560-1565
A physical model for the kink effect in InAlAs/InGaAs HEMT's
Authors: Somerville, MH Ernst, A del Alamo, JA
Citation: Mh. Somerville et al., A physical model for the kink effect in InAlAs/InGaAs HEMT's, IEEE DEVICE, 47(5), 2000, pp. 922-930
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductorfield-effect transistors
Authors: Appenzeller, J Martel, R Solomon, P Chan, K Avouris, P Knoch, J Benedict, J Tanner, M Thomas, S Wang, KL del Alamo, JA
Citation: J. Appenzeller et al., Scheme for the fabrication of ultrashort channel metal-oxide-semiconductorfield-effect transistors, APPL PHYS L, 77(2), 2000, pp. 298-300
Hydrogen-induced piezoelectric effects in InPHEMT's
Authors: Blanchard, RR del Alamo, JA Adams, SB Chao, PC Cornet, A
Citation: Rr. Blanchard et al., Hydrogen-induced piezoelectric effects in InPHEMT's, IEEE ELEC D, 20(8), 1999, pp. 393-395
On-state breakdown in power HEMT's: Measurements and modeling
Authors: Somerville, MH Blanchard, R del Alamo, JA Duh, KG Chao, PC
Citation: Mh. Somerville et al., On-state breakdown in power HEMT's: Measurements and modeling, IEEE DEVICE, 46(6), 1999, pp. 1087-1093
Breakdown in millimeter-wave power InPHEMT's: A comparison with GaAsPHEMT's
Authors: del Alamo, JA Somerville, MH
Citation: Ja. Del Alamo et Mh. Somerville, Breakdown in millimeter-wave power InPHEMT's: A comparison with GaAsPHEMT's, IEEE J SOLI, 34(9), 1999, pp. 1204-1211
Risultati: 1-14 |