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Results: 1-25/71
Authors:
OLVER D
GRANT P
Citation: D. Olver et P. Grant, UNTITLED, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 1-1
Authors:
POWELL MJ
Citation: Mj. Powell, POLYSILICON DEVICES AND APPLICATIONS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 2-2
Authors:
CLARK MG
Citation: Mg. Clark, CURRENT STATUS AND FUTURE-PROSPECTS OF POLY-SI DEVICES, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 3-8
Authors:
STROH RJ
PLAIS F
KRETZ T
LEGAGNEUX P
HUET O
MAGIS M
PRIBAT D
JIANG N
HUGON MC
AGIUS B
Citation: Rj. Stroh et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 9-13
Authors:
DYER TE
MARSHALL JM
PICKIN W
HEPBURN AR
DAVIES JF
Citation: Te. Dyer et al., OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF POLYSILICON PRODUCED BY EXCIMER-LASER AND FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H), IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 15-18
Authors:
SARRET M
LIBA A
BONNAUD O
LEBIHAN F
FORTIN B
PICHON L
RAOULT F
Citation: M. Sarret et al., IN-SITU PHOSPHORUS-DOPED VLPCVD POLYSILICON LAYERS FOR POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 19-22
Authors:
WU Y
MONTGOMERY JH
REFSUM A
MITCHELL SJN
ARMSTRONG BM
GAMBLE HS
Citation: Y. Wu et al., LARGE-AREA SHOWER IMPLANTER FOR THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 23-26
Authors:
AYRES JR
BROTHERTON SD
CLARENCE IR
DOBSON PJ
Citation: Jr. Ayres et al., PHOTOCURRENTS IN POLY-SI TFTS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 27-32
Authors:
PECORA A
TALLARIDA G
FORTUNATO G
MARIUCCI L
REITA C
MIGLIORATO P
Citation: A. Pecora et al., HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 33-37
Authors:
AYRES JR
YOUNG ND
Citation: Jr. Ayres et Nd. Young, HOT-CARRIER EFFECTS IN DEVICES AND CIRCUITS FORMED FROM POLY-SI, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 38-44
Authors:
QUINN M
MIGLIORATO P
REITA C
PECORA A
TALLARIDA G
FORTUNATO G
Citation: M. Quinn et al., HIGH-FIELD EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 45-49
Authors:
EDWARDS MJ
Citation: Mj. Edwards, NMOS AND CMOS POLYSILICON DRIVE CIRCUITS FOR LIQUID-CRYSTAL DISPLAYS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 50-55
Authors:
FLUXMAN SM
Citation: Sm. Fluxman, DESIGN AND PERFORMANCE OF DIGITAL POLYSILICON THIN-FILM-TRANSISTOR CIRCUITS ON GLASS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 56-59
Authors:
REITA C
FLUXMAN S
Citation: C. Reita et S. Fluxman, DESIGN AND OPERATION OF POLY-SI ANALOG CIRCUITS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 60-64
Authors:
PENNATHUR S
KWOK HHL
Citation: S. Pennathur et Hhl. Kwok, EQUIVALENT-CIRCUIT FOR A GAAS CCD, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 377-382
LOGIC DESIGN BASED ON NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS OF QUANTUM ELECTRONIC DEVICES
Authors:
MOHAN S
MAZUMDER P
HADDAD GI
MAINS RK
SUN JP
Citation: S. Mohan et al., LOGIC DESIGN BASED ON NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS OF QUANTUM ELECTRONIC DEVICES, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 383-391
Authors:
TAYLOR GW
KIELY PA
Citation: Gw. Taylor et Pa. Kiely, THEORETICAL AND EXPERIMENTAL RESULTS FOR THE INVERSION CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 392-400
Authors:
PERFETTI R
Citation: R. Perfetti, ASYMPTOTIC STABILITY OF EQUILIBRIUM POINTS IN DYNAMICAL NEURAL NETWORKS, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 401-405
Authors:
FREY DR
Citation: Dr. Frey, LOG-DOMAIN FILTERING - AN APPROACH TO CURRENT-MODE FILTERING, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 406-416
Authors:
IVASCU A
KAZIMIERCZUK MK
BIRCAGALATEANU S
Citation: A. Ivascu et al., CLASS-E RESONANT LOW DI DT RECTIFIER, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 417-423
Authors:
OJALA PK
KASKI KK
Citation: Pk. Ojala et Kk. Kaski, ANALYTICALLY EXTRACTED ZTC POINT FOR GAAS-MESFET, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 424-430
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, LIQUID-HELIUM TEMPERATURE HOT-CARRIER DEGRADATION OF SI P-CHANNEL MOSTS, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 431-436
Authors:
TANG HC
SHIAU MC
Citation: Hc. Tang et Mc. Shiau, POWER DISSIPATION MODELS AND PERFORMANCE IMPROVEMENT TECHNIQUES FOR CMOS INVERTERS WITH RC LINE AND TREE INTERCONNECTIONS, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 437-443
Authors:
TAN N
ERIKSSON S
Citation: N. Tan et S. Eriksson, NEW MULTIBIT DELTA-SIGMA MODULATOR STRUCTURE WITH REDUCED SENSITIVITYTO THE D-A CONVERSION ERROR, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 444-448
Authors:
ZHANG X
DING K
Citation: X. Zhang et K. Ding, CAPACITANCE TIME TRANSIENT CHARACTERISTICS OF PULSED MOS CAPACITOR APPLICATION IN MEASUREMENT OF SEMICONDUCTOR PARAMETERS, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 449-452