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Results: 26-50/109
Authors:
MAHAJAN A
CUEVA G
ARAFA M
FAY P
ADESIDA I
Citation: A. Mahajan et al., FABRICATION AND CHARACTERIZATION OF AN INALAS INGAAS/INP RING OSCILLATOR USING INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS/, IEEE electron device letters, 18(8), 1997, pp. 391-393
Authors:
MAHAJAN A
ARAFA M
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., 0.3-MU-M GATE-LENGTH ENHANCEMENT-MODE INALAS INGAAS/INP HIGH-ELECTRON-MOBILITY TRANSISTOR/, IEEE electron device letters, 18(6), 1997, pp. 284-286
Authors:
HANNAN M
GIANNETTA RW
GRUNDBACHER R
ADESIDA I
Citation: M. Hannan et al., TRANSPORT STUDY IN HIGH-MOBILITY GAAS ALGAAS LATERAL SUPERLATTICES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1291-1294
Authors:
FAY P
ARAFA M
WOHLMUTH WA
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., DESIGN, FABRICATION, AND PERFORMANCE OF HIGH-SPEED MONOLITHICALLY INTEGRATED INALAS INGAAS/INP MSM/HEMT PHOTORECEIVERS/, Journal of lightwave technology, 15(10), 1997, pp. 1871-1879
Authors:
MELLOCH MR
ADESIDA I
Citation: Mr. Melloch et I. Adesida, UNTITLED - FOREWORD, Journal of electronic materials, 26(3), 1997, pp. 107-107
Authors:
PING AT
SCHMITZ AC
ADESIDA I
KHAN MA
CHEN Q
YANG JW
Citation: At. Ping et al., CHARACTERIZATION OF REACTIVE ION ETCHING-INDUCED DAMAGE TO N-GAN SURFACES USING SCHOTTKY DIODES, Journal of electronic materials, 26(3), 1997, pp. 266-271
Authors:
SENGUPTA DK
JACKSON SL
CURTIS AP
FANG W
MALIN JI
HORTON TU
HARTMAN Q
KUO HC
THOMAS S
MILLER J
HSIEH KC
ADESIDA I
CHUANG SL
FENG M
STILLMAN GE
CHANG YC
WU W
TUCKER J
CHEN H
GIBSON JM
MAZUMDER J
LI L
LIU HC
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF N-TYPE INP INGAAS QUANTUM-WELL INFRARED PHOTODETECTORS FOR RESPONSE AT 8.93 MU-M/, Journal of electronic materials, 26(12), 1997, pp. 1376-1381
Authors:
SENGUPTA DK
JACKSON SL
CURTIS AP
FANG W
MALIN JI
HORTON TU
KUO HC
MOY A
MILLER J
HSIEH KC
CHENG KY
CHEN H
ADESIDA I
CHUANG SL
FENG M
STILLMAN GE
WU W
TUCKER J
CHANG YC
LI L
LIU HC
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF INGAAS INP P-QUANTUM-WELL INFRARED PHOTODETECTORS WITH EXTREMELY THIN QUANTUM-WELLS/, Journal of electronic materials, 26(12), 1997, pp. 1382-1388
Authors:
SENGUPTA DK
FANG W
MALIN JI
CURTIS AP
HORTON T
KUO HC
TURNBULL D
LIN CH
LI J
HSIEH KC
CHUANG SL
ADESIDA I
FENG M
BISHOP SG
STILLMAN GE
GIBSON JM
CHEN H
MAZUMDER J
LIU HC
Citation: Dk. Sengupta et al., EFFECTS OF RAPID THERMAL ANNEALING ON THE DEVICE CHARACTERISTICS OF QUANTUM-WELL INFRARED PHOTODETECTORS, Journal of electronic materials, 26(1), 1997, pp. 43-51
Authors:
PING AT
KHAN MA
ADESIDA I
Citation: At. Ping et al., DRY-ETCHING OF ALXGA1-XN USING CHEMICALLY ASSISTED ION-BEAM ETCHING, Semiconductor science and technology, 12(1), 1997, pp. 133-135
Authors:
ADESIDA I
ARAFA M
ISMAIL K
CHU JO
MEYERSON BS
Citation: I. Adesida et al., SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS, Microelectronic engineering, 35(1-4), 1997, pp. 257-260
Authors:
GRUNDBACHER R
BALLEGEER D
KETTERSON AA
KAO YC
ADESIDA I
Citation: R. Grundbacher et al., UTILIZATION OF AN ELECTRON-BEAM RESIST PROCESS TO EXAMINE THE EFFECTSOF ASYMMETRIC GATE RECESS ON THE DEVICE CHARACTERISTICS OF ALGAAS INGAAS PHEMTS/, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2136-2142
Authors:
SOOLE JBD
AMERSFOORT MR
LEBLANC HP
CANEAU C
BHAT R
KOZA MA
YOUTSEY C
ADESIDA I
Citation: Jbd. Soole et al., TOLERANCE OF INP POLARIZATION-INDEPENDENT ARRAYED-WAVE-GUIDE FILTERS USING SQUARE WAVE-GUIDE CORES, Electronics Letters, 33(7), 1997, pp. 579-580
Authors:
CHEN Q
GASKA R
KHAN MA
SHUR MS
PING A
ADESIDA I
BURM J
SCHAFF WJ
EASTMAN LF
Citation: Q. Chen et al., MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/, Electronics Letters, 33(7), 1997, pp. 637-639
Authors:
YOUTSEY C
ADESIDA I
BULMAN G
Citation: C. Youtsey et al., BROAD-AREA PHOTOELECTROCHEMICAL ETCHING OF GAN, Electronics Letters, 33(3), 1997, pp. 245-246
Authors:
AMERFOORT MR
SOOLE JBD
CANEAU C
LEBLANC HP
RAJHEL A
YOUTSEY C
ADESIDA I
Citation: Mr. Amerfoort et al., COMPACT ARRAYED-WAVE-GUIDE GRATING MULTIFREQUENCY LASER USING BULK ACTIVE MATERIAL, Electronics Letters, 33(25), 1997, pp. 2124-2126
Authors:
CHEN Q
YANG JW
KAHN MA
PING AT
ADESIDA I
Citation: Q. Chen et al., HIGH TRANSCONDUCTANCE ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS ON SIC SUBSTRATES/, Electronics Letters, 33(16), 1997, pp. 1413-1415
Authors:
GASKA R
CHEN Q
YANG J
KHAN MA
SHUR MS
PING A
ADESIDA I
Citation: R. Gaska et al., ALGAN-GAN HETEROSTRUCTURE FETS WITH OFFSET GATE DESIGN, Electronics Letters, 33(14), 1997, pp. 1255-1257
Authors:
PING AT
KHAN MA
CHEN Q
YANG JW
ADESIDA I
Citation: At. Ping et al., DEPENDENCE OF DC AND RF CHARACTERISTICS ON GATE LENGTH FOR HIGH-CURRENT ALGAN GAN HFETS/, Electronics Letters, 33(12), 1997, pp. 1081-1083
Authors:
YOUTSEY C
ADESIDA I
BULMAN G
Citation: C. Youtsey et al., HIGHLY ANISOTROPIC PHOTOENHANCED WET ETCHING OF N-TYPE GAN, Applied physics letters, 71(15), 1997, pp. 2151-2153
Authors:
WOHLMUTH W
ARAFA M
FAY P
ADESIDA I
Citation: W. Wohlmuth et al., INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH A HYBRID COMBINATION OF TRANSPARENT AND OPAQUE ELECTRODES, Applied physics letters, 70(22), 1997, pp. 3026-3028
Authors:
PANEPUCCI R
REUTER E
FAY P
YOUTSEY C
KLUENDER J
CANEAU C
COLEMAN JJ
BISHOP SG
ADESIDA I
Citation: R. Panepucci et al., QUANTUM DOTS FABRICATED IN INP INGAAS BY FREE CL-2 GAS ETCHING AND METALORGANIC CHEMICAL-VAPOR-DEPOSITION REGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3641-3645
Authors:
HANNAN M
GRUNDBACHER R
ADESIDA I
GIANNETTA RW
Citation: M. Hannan et al., FABRICATION OF QUANTUM NANOSTRUCTURES FOR THE MEASUREMENT OF THERMOELECTRIC PHENOMENA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4062-4067
Authors:
YOUTSEY C
ADESIDA I
SOOLE JBD
AMERSFOORT MR
LEBLANC HP
ANDREADAKIS NC
RAJHEL A
CANEAU C
KOZA MA
BHAT R
Citation: C. Youtsey et al., FABRICATION OF INP-BASED WAVELENGTH-DIVISION MULTIPLEXING ARRAYED-WAVE-GUIDE FILTERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4091-4095
Authors:
WOHLMUTH WA
FAY P
ADESIDA I
Citation: Wa. Wohlmuth et al., DARK CURRENT SUPPRESSION IN GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, IEEE photonics technology letters, 8(8), 1996, pp. 1061-1063