AAAAAA

   
Results: 1-25 | 26-32
Results: 1-25/32
BEAM GEOMETRICAL MODELING OF CBE ON NONPLANAR SUBSTRATE
Authors: JAHAN D ALEXANDRE F BENCHIMOL JL
Citation: D. Jahan et al., BEAM GEOMETRICAL MODELING OF CBE ON NONPLANAR SUBSTRATE, Journal of crystal growth, 188(1-4), 1998, pp. 176-182
LOW-TEMPERATURE PLANAR REGROWTH OF SEMIINSULATING INP BY LOW-PRESSUREHYDRIDE VAPOR-PHASE EPITAXY FOR DEVICE APPLICATION
Authors: ALEXANDRE F PARILLAUD O NGUYEN DC AZOULAY R QUILLEC M BOUCHOULE S LEMESTREALLAN G JUHEL M LEROUX G RAO EVK
Citation: F. Alexandre et al., LOW-TEMPERATURE PLANAR REGROWTH OF SEMIINSULATING INP BY LOW-PRESSUREHYDRIDE VAPOR-PHASE EPITAXY FOR DEVICE APPLICATION, Journal of crystal growth, 187(3-4), 1998, pp. 347-354
PECTIN METHYLESTERASE PATTERN IN FLAX SEEDLINGS DURING THEIR DEVELOPMENT
Authors: ALEXANDRE F MORVAN O GAFFE J MARECK A JAUNEAU A DAUCHEL H BALANGE AP MORVAN C
Citation: F. Alexandre et al., PECTIN METHYLESTERASE PATTERN IN FLAX SEEDLINGS DURING THEIR DEVELOPMENT, Plant physiology and biochemistry, 35(6), 1997, pp. 427-436
TANDEM OF MODULATORS FOR HIGH ON OFF PULSE GENERATION (-55DB)/
Authors: DEVAUX F JAHAN D ALEXANDRE F OUGAZZADEN A VERGNOL E CARRE M
Citation: F. Devaux et al., TANDEM OF MODULATORS FOR HIGH ON OFF PULSE GENERATION (-55DB)/, Electronics Letters, 33(17), 1997, pp. 1491-1492
PLANAR INGAP GAAS HBTS FOR HIGH-SPEED OPTOELECTRONIC CIRCUIT APPLICATIONS/
Authors: DRIAD R DESROUSSEAUX P DUCHENOIS AM ALEXANDRE F LAUNAY P
Citation: R. Driad et al., PLANAR INGAP GAAS HBTS FOR HIGH-SPEED OPTOELECTRONIC CIRCUIT APPLICATIONS/, Electronics Letters, 33(1), 1997, pp. 85-86
LOW-LOSS HYDROGENATED BURIED WAVE-GUIDE COUPLER INTEGRATED WITH A 4-WAVELENGTH DISTRIBUTIVE BRAGG REFLECTOR LASER ARRAY ON INP
Authors: ALLOVON M TALNEAU A RAO EVK HUET F ALEXANDRE F OUGAZZADEN A SLEMPKES S
Citation: M. Allovon et al., LOW-LOSS HYDROGENATED BURIED WAVE-GUIDE COUPLER INTEGRATED WITH A 4-WAVELENGTH DISTRIBUTIVE BRAGG REFLECTOR LASER ARRAY ON INP, Applied physics letters, 71(13), 1997, pp. 1750-1752
HIGH-STABILITY HETEROJUNCTION BIPOLAR-TRANSISTORS WITH CARBON-DOPED BASE GROWN BY ATOMIC LAYER CHEMICAL BEAM EPITAXY
Authors: DRIAD R ALEXANDRE F JUHEL M LAUNAY P
Citation: R. Driad et al., HIGH-STABILITY HETEROJUNCTION BIPOLAR-TRANSISTORS WITH CARBON-DOPED BASE GROWN BY ATOMIC LAYER CHEMICAL BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3509-3513
(NH4)(2)S-X PREEPITAXIAL TREATMENT FOR GAAS CHEMICAL BEAM EPITAXY REGROWTH
Authors: SIK H DRIAD R LEGAY P JUHEL M HARMAND JC LAUNAY P ALEXANDRE F
Citation: H. Sik et al., (NH4)(2)S-X PREEPITAXIAL TREATMENT FOR GAAS CHEMICAL BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 147-151
BENEFITS OF CHEMICAL BEAM EPITAXY FOR MICRO AND OPTOELECTRONIC APPLICATIONS
Authors: BENCHIMOL JL ALEXANDRE F LAMARE B LEGAY P
Citation: Jl. Benchimol et al., BENEFITS OF CHEMICAL BEAM EPITAXY FOR MICRO AND OPTOELECTRONIC APPLICATIONS, Progress in crystal growth and characterization of materials, 33(4), 1996, pp. 473-495
ARTIFICIAL NEURAL NETWORKS FOR THE PRESETTING OF A STEEL TEMPER MILL
Authors: PICAN N ALEXANDRE F BRESSON P
Citation: N. Pican et al., ARTIFICIAL NEURAL NETWORKS FOR THE PRESETTING OF A STEEL TEMPER MILL, IEEE expert, 11(1), 1996, pp. 22-27
HOW OWE ARCHITECTURES ENCODE CONTEXTUAL EFFECTS IN ARTIFICIAL NEURAL NETWORKS
Authors: PICAN N ALEXANDRE F
Citation: N. Pican et F. Alexandre, HOW OWE ARCHITECTURES ENCODE CONTEXTUAL EFFECTS IN ARTIFICIAL NEURAL NETWORKS, Mathematics and computers in simulation, 41(1-2), 1996, pp. 63-74
SUPERLATTICE EFFECTS INDUCED BY ATOMIC ORDERING ON GAXIN1-XP RAMAN MODES
Authors: HASSINE A SAPRIEL J LEBERRE P DIFORTEPOISSON MA ALEXANDRE F QUILLEC M
Citation: A. Hassine et al., SUPERLATTICE EFFECTS INDUCED BY ATOMIC ORDERING ON GAXIN1-XP RAMAN MODES, Physical review. B, Condensed matter, 54(4), 1996, pp. 2728-2732
SELECTIVE-AREA CHEMICAL BEAM EPITAXY FOR BUTT-COUPLING INTEGRATION
Authors: LEGAY P ALEXANDRE F BENCHIMOL JL ALLOVON M LAUNE F FOUCHET S
Citation: P. Legay et al., SELECTIVE-AREA CHEMICAL BEAM EPITAXY FOR BUTT-COUPLING INTEGRATION, Journal of crystal growth, 164(1-4), 1996, pp. 314-320
IMPROVED STABILITY OF C-DOPED GAAS GROWN BY CHEMICAL BEAM EPITAXY FORHETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS
Authors: DRIAD R ALEXANDRE F BENCHIMOL JL JUSSERAND B SERMAGE B JUHEL M LAUNAY P
Citation: R. Driad et al., IMPROVED STABILITY OF C-DOPED GAAS GROWN BY CHEMICAL BEAM EPITAXY FORHETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS, Journal of crystal growth, 158(3), 1996, pp. 210-216
LAPAROSCOPIC PROCEDURES FOR STRESS-INCONTINENCE AND PROLAPSE
Authors: WATTIEZ A BOUGHIZANE S ALEXANDRE F CANIS M MAGE G POULY JL BRUHAT MA
Citation: A. Wattiez et al., LAPAROSCOPIC PROCEDURES FOR STRESS-INCONTINENCE AND PROLAPSE, Current opinion in obstetrics & gynecology, 7(4), 1995, pp. 317-321
MODERN EPITAXIAL TECHNIQUES FOR HBT STRUCTURES
Authors: ALEXANDRE F BENCHIMOL JL LAUNAY P DANGLA J DUBONCHEVALLIER C
Citation: F. Alexandre et al., MODERN EPITAXIAL TECHNIQUES FOR HBT STRUCTURES, Solid-state electronics, 38(9), 1995, pp. 1667-1674
DEPENDENCE OF INP AND GAAS CHEMICAL BEAM EPITAXY GROWTH-RATE ON SUBSTRATE ORIENTATIONS - APPLICATIONS TO SELECTIVE-AREA EPITAXY
Authors: LEGAY P ALEXANDRE F BENCHIMOL JL HARMAND JC
Citation: P. Legay et al., DEPENDENCE OF INP AND GAAS CHEMICAL BEAM EPITAXY GROWTH-RATE ON SUBSTRATE ORIENTATIONS - APPLICATIONS TO SELECTIVE-AREA EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 394-398
UNIFORM SELECTIVE-AREA GROWTH OF GAAS AND GAINP BY LOW-TEMPERATURE CHEMICAL BEAM EPITAXY
Authors: LEGAY P ALEXANDRE F NUNEZ M SAPRIEL J ZERGUINE D BENCHIMOL JL
Citation: P. Legay et al., UNIFORM SELECTIVE-AREA GROWTH OF GAAS AND GAINP BY LOW-TEMPERATURE CHEMICAL BEAM EPITAXY, Journal of crystal growth, 148(3), 1995, pp. 211-218
ACOUSTICAL AND OPTICAL-PROPERTIES OF GA0.52IN0.48P - A BRILLOUIN-SCATTERING STUDY
Authors: HASSINE A SAPRIEL J LEBERRE P LEGAY P ALEXANDRE F POST G
Citation: A. Hassine et al., ACOUSTICAL AND OPTICAL-PROPERTIES OF GA0.52IN0.48P - A BRILLOUIN-SCATTERING STUDY, Journal of applied physics, 77(12), 1995, pp. 6569-6571
OPTICAL CHARACTERIZATION OF CHEMICAL BEAM EPITAXY-GROWN GA0.52IN0.48PLAYERS AND RELATED MICROSTRUCTURES
Authors: HASSINE A SAPRIEL J NUNEZ M LEBERRE P LEGAY P ALEXANDRE F POST G LEROUX G
Citation: A. Hassine et al., OPTICAL CHARACTERIZATION OF CHEMICAL BEAM EPITAXY-GROWN GA0.52IN0.48PLAYERS AND RELATED MICROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 151-154
FULLY PLANAR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING CHEMICAL BEAM EPITAXY SELECTIVE GROWTH/
Authors: DRIAD R DUCHENOIS AM LEROUX G ZERGUINE D ALEXANDRE F BENCHIMOL JL LEGAY P LAUNAY P
Citation: R. Driad et al., FULLY PLANAR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING CHEMICAL BEAM EPITAXY SELECTIVE GROWTH/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 261-263
FULLY-PLANAR ALGAAS GAAS HBTS ACHIEVED BY SELECTIVE CBE REGROWTH/
Authors: DRIAD R DUCHENOIS AM ZERGUINE D ALEXANDRE F LEGAY P LAUNAY P
Citation: R. Driad et al., FULLY-PLANAR ALGAAS GAAS HBTS ACHIEVED BY SELECTIVE CBE REGROWTH/, IEEE electron device letters, 15(11), 1994, pp. 480-481
HIGH-CARBON DOPING OF GAAS USING TRISDIMETHYLAMINOARSENIC AND TRIMETHYLGALLIUM IN CHEMICAL BEAM EPITAXY
Authors: LAMARE B BENCHIMOL JL JUHEL M AKAMATSU B LEGAY P ALEXANDRE F
Citation: B. Lamare et al., HIGH-CARBON DOPING OF GAAS USING TRISDIMETHYLAMINOARSENIC AND TRIMETHYLGALLIUM IN CHEMICAL BEAM EPITAXY, Journal of crystal growth, 141(3-4), 1994, pp. 347-351
QUASI-PLANAR GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DEVICE ENTIRELY GROWN BY CHEMICAL BEAM EPITAXY
Authors: ALEXANDRE F ZERGUINE D LAUNAY P BENCHIMOL JL BERZ M SERMAGE B KOMATITSCH D JUHEL M
Citation: F. Alexandre et al., QUASI-PLANAR GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DEVICE ENTIRELY GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 235-240
USING NEURONAL NETWORK IN COLD-ROLLING PR OCESS AT SOLLAC-FLORANGE TEMPER MILL
Authors: BRESSON P COURIOT E ALEXANDRE F HATON JP
Citation: P. Bresson et al., USING NEURONAL NETWORK IN COLD-ROLLING PR OCESS AT SOLLAC-FLORANGE TEMPER MILL, Revue de métallurgie, 90(7-8), 1993, pp. 941-947
Risultati: 1-25 | 26-32