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Results: 1-11 |
Results: 11
MEASUREMENT OF A CROSS-SECTION FOR SINGLE-EVENT GATE RUPTURE IN POWERMOSFETS
Authors: MOURET I CALVEL P ALLENSPACH M TITUS JL WHEATLEY CF LABEL KA CALVET MC SCHRIMPF RD GALLOWAY KF
Citation: I. Mouret et al., MEASUREMENT OF A CROSS-SECTION FOR SINGLE-EVENT GATE RUPTURE IN POWERMOSFETS, IEEE electron device letters, 17(4), 1996, pp. 163-165
SEGR - A UNIQUE FAILURE MODE FOR POWER MOSFETS IN SPACECRAFT
Authors: ALLENSPACH M BREWS JR GALLOWAY KE JOHNSON GH SCHRIMPF RD PEASE RL TITUS JL WHEATLEY CF
Citation: M. Allenspach et al., SEGR - A UNIQUE FAILURE MODE FOR POWER MOSFETS IN SPACECRAFT, Microelectronics and reliability, 36(11-12), 1996, pp. 1871-1874
SEGR AND SEB IN N-CHANNEL POWER MOSFETS
Authors: ALLENSPACH M DACHS C JOHNSON GH SCHRIMPF RD LORFEVRE E PALAU JM BREWS JR GALLOWAY KF TITUS JL WHEATLEY CF
Citation: M. Allenspach et al., SEGR AND SEB IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2927-2931
A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS
Authors: JOHNSON GH GALLOWAY KF SCHRIMPF RD TITUS JL WHEATLEY CF ALLENSPACH M DACHS C
Citation: Gh. Johnson et al., A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2932-2937
INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS
Authors: TITUS JL WHEATLEY CF ALLENSPACH M SCHRIMPF RD BURTON DI BREWS JR GALLOWAY KF PEASE RL
Citation: Jl. Titus et al., INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2938-2943
EXPERIMENTAL-EVIDENCE OF THE TEMPERATURE AND ANGULAR-DEPENDENCE IN SEGR
Authors: MOURET I CALVET MC CALVEL P TASTET P ALLENSPACH M LABEL KA TITUS JL WHEATLEY CF SCHRIMPF RD GALLOWAY KF
Citation: I. Mouret et al., EXPERIMENTAL-EVIDENCE OF THE TEMPERATURE AND ANGULAR-DEPENDENCE IN SEGR, IEEE transactions on nuclear science, 43(3), 1996, pp. 936-943
SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE
Authors: ALLENSPACH M MOURET I TITUS JL WHEATLEY CF PEASE RL BREWS JR SCHRIMPF RD GALLOWAY KF
Citation: M. Allenspach et al., SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1922-1927
IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION
Authors: TITUS JL WHEATLEY CF BURTON DI MOURET I ALLENSPACH M BREWS J SCHRIMPF R GALLOWAY K PEASE RL
Citation: Jl. Titus et al., IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1928-1934
EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS
Authors: ALLENSPACH M BREWS JR MOURET I SCHRIMPF RD GALLOWAY KF
Citation: M. Allenspach et al., EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2160-2166
TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR
Authors: MOURET I ALLENSPACH M SCHRIMPF RD BREWS JR GALLOWAY KF CALVEL P
Citation: I. Mouret et al., TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR, IEEE transactions on nuclear science, 41(6), 1994, pp. 2216-2221
A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS
Authors: BREWS JR ALLENSPACH M SCHRIMPF RD GALLOWAY KF TITUS JL WHEATLEY CF
Citation: Jr. Brews et al., A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1959-1966
Risultati: 1-11 |