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Results: 1-13 |
Results: 13
PHOTOLUMINESCENCE OF CADMIUM TELLURIDE RECRYSTALLIZED BY NANOSECOND PULSED-LASER IRRADIATION
Authors: BABENTSOV VN TARBAEV NI
Citation: Vn. Babentsov et Ni. Tarbaev, PHOTOLUMINESCENCE OF CADMIUM TELLURIDE RECRYSTALLIZED BY NANOSECOND PULSED-LASER IRRADIATION, Semiconductors, 32(1), 1998, pp. 26-28
ACCEPTORS IN CD1-XMNXTE (X-LESS-THAN-0.1)
Authors: VLASENKO AI BABENTSOV VN VLASENKO ZK SVECHNIKOV SV RARENKO IM ZAKHARUK ZI NIKONYUK ES SHLYAKHOVYI VL
Citation: Ai. Vlasenko et al., ACCEPTORS IN CD1-XMNXTE (X-LESS-THAN-0.1), Semiconductors, 31(8), 1997, pp. 869-871
DISTRIBUTION OF A SHALLOW DONOR IMPURITY IN A P-TYPE CDTE WAFER-ANNEALED IN CD VAPORS
Authors: BABENTSOV VN VLASENKO ZK VLASENKO AI LYUBCHENKO AV
Citation: Vn. Babentsov et al., DISTRIBUTION OF A SHALLOW DONOR IMPURITY IN A P-TYPE CDTE WAFER-ANNEALED IN CD VAPORS, Semiconductors, 31(5), 1997, pp. 441-443
RADIATIVE RECOMBINATION OF MECHANICALLY DISORDERED UNDOPED P-TYPE CDTE
Authors: BABENTSOV VN
Citation: Vn. Babentsov, RADIATIVE RECOMBINATION OF MECHANICALLY DISORDERED UNDOPED P-TYPE CDTE, Semiconductors, 30(8), 1996, pp. 750-753
EVOLUTION OF THE IMPURITY-DEFECT SYSTEM OF UNDOPED N-TYPE AND P-TYPE CDTE AT ROOM-TEMPERATURE
Authors: BABENTSOV VN VLASENKO AI TARBAEV NI
Citation: Vn. Babentsov et al., EVOLUTION OF THE IMPURITY-DEFECT SYSTEM OF UNDOPED N-TYPE AND P-TYPE CDTE AT ROOM-TEMPERATURE, Semiconductors, 29(9), 1995, pp. 813-816
TRANSFORMATION OF THE DEFECT SYSTEM ALONG THICKNESS IN A CDTE WAFER DURING DIFFUSIVE DOPING WITH GALLIUM
Authors: BABENTSOV VN VLASENKO AI TARBAEV NI
Citation: Vn. Babentsov et al., TRANSFORMATION OF THE DEFECT SYSTEM ALONG THICKNESS IN A CDTE WAFER DURING DIFFUSIVE DOPING WITH GALLIUM, Semiconductors, 29(2), 1995, pp. 165-168
LOW-TEMPERATURE DIFFUSION OF CADMIUM IN P-TYPE CDTE - ANALYSIS OF LUMINESCENCE PROFILES AND X-RAY CHARACTERISTIC RADIATION
Authors: BABENTSOV VN KLETSKII SV TARBAEV NI
Citation: Vn. Babentsov et al., LOW-TEMPERATURE DIFFUSION OF CADMIUM IN P-TYPE CDTE - ANALYSIS OF LUMINESCENCE PROFILES AND X-RAY CHARACTERISTIC RADIATION, Semiconductors, 28(12), 1994, pp. 1194-1196
SHORT-TIME ANNEALING OF AS-GROWN P-CDTE WAFERS
Authors: SOCHINSKII NV SERRANO MD BABENTSOV VN TARBAEV NI GARRIDO J DIEGUEZ E
Citation: Nv. Sochinskii et al., SHORT-TIME ANNEALING OF AS-GROWN P-CDTE WAFERS, Semiconductor science and technology, 9(9), 1994, pp. 1713-1718
TRANSFORMATION OF A SYSTEM OF DEFECTS NEAR THE SURFACES OF CDTE, ZNXCD1-XTE AND CDTE1-XSEX CRYSTALS ETCHED WITH ARGON IONS
Authors: BABENTSOV VN BEKETOV GV GORBAN SI
Citation: Vn. Babentsov et al., TRANSFORMATION OF A SYSTEM OF DEFECTS NEAR THE SURFACES OF CDTE, ZNXCD1-XTE AND CDTE1-XSEX CRYSTALS ETCHED WITH ARGON IONS, Semiconductors, 27(3), 1993, pp. 283-286
INFLUENCE OF GALLIUM ON THE LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRAOF DIFFUSION-DOPED CADMIUM TELLURIDE
Authors: BABENTSOV VN VLASENKO AI SOCHINSKII NV TARBAEV NI
Citation: Vn. Babentsov et al., INFLUENCE OF GALLIUM ON THE LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRAOF DIFFUSION-DOPED CADMIUM TELLURIDE, Semiconductors, 27(10), 1993, pp. 883-886
MECHANISMS OF FORMATION OF A DISTURBED LAYER IN P-TYPE CDTE UNDER THEACTION OF NANOSECOND LASER-PULSES
Authors: BABENTSOV VN BAIDULLAEVA A VLASENKO AI GORBAN SI DAULETMURATOV BK MOZOL PE
Citation: Vn. Babentsov et al., MECHANISMS OF FORMATION OF A DISTURBED LAYER IN P-TYPE CDTE UNDER THEACTION OF NANOSECOND LASER-PULSES, Semiconductors, 27(10), 1993, pp. 894-896
VPE OF THE HG1-XCDXTE OHMIC CONTACT LAYERS ON P-CDTE
Authors: SOCHINSKII NV BABENTSOV VN KLETSKII SV SERRANO MD DIEGUEZ E
Citation: Nv. Sochinskii et al., VPE OF THE HG1-XCDXTE OHMIC CONTACT LAYERS ON P-CDTE, Physica status solidi. a, Applied research, 140(2), 1993, pp. 445-451
THE LOW-TEMPERATURE ANNEALING OF P-CADMIUM TELLURIDE IN GALLIUM-BATH
Authors: SOCHINSKII NV BABENTSOV VN TARBAEV NI SERRANO MD DIEGUEZ E
Citation: Nv. Sochinskii et al., THE LOW-TEMPERATURE ANNEALING OF P-CADMIUM TELLURIDE IN GALLIUM-BATH, Materials research bulletin, 28(10), 1993, pp. 1061-1066
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