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Results: 1-25/117
REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE
Authors: SZELAG B BALESTRA F GHIBAUDO G
Citation: B. Szelag et al., REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE, Journal de physique. IV, 8(P3), 1998, pp. 9-12
TEMPERATURE-DEPENDENCE OF HOT-CARRIER EFFECTS IN 0.2 MU-M N-CHANNEL AND P-CHANNEL FULLY-DEPLETED UNIBOND MOSFET
Authors: RENN SH RAYNAUD C BALESTRA F
Citation: Sh. Renn et al., TEMPERATURE-DEPENDENCE OF HOT-CARRIER EFFECTS IN 0.2 MU-M N-CHANNEL AND P-CHANNEL FULLY-DEPLETED UNIBOND MOSFET, Journal de physique. IV, 8(P3), 1998, pp. 13-16
A THOROUGH ANALYSIS OF SELF-HEATING EFFECTS FOR SOI MOSFETS ON SIMOX AND UNIBOND SUBSTRATES
Authors: JOMAAH J RAULY E GHIBAUDO G BALESTRA F
Citation: J. Jomaah et al., A THOROUGH ANALYSIS OF SELF-HEATING EFFECTS FOR SOI MOSFETS ON SIMOX AND UNIBOND SUBSTRATES, Journal de physique. IV, 8(P3), 1998, pp. 17-20
CRYOGENIC OPERATION OF HEAVY-ION IMPLANTED N-CHANNEL AND P-CHANNEL MOSFET
Authors: SZELAG B SKOTNICKI T BALESTRA F
Citation: B. Szelag et al., CRYOGENIC OPERATION OF HEAVY-ION IMPLANTED N-CHANNEL AND P-CHANNEL MOSFET, Journal de physique. IV, 8(P3), 1998, pp. 37-40
EFFECT OF THE FORWARD BIASING THE SOURCE-SUBSTRATE JUNCTION IN N-METAL-OXIDE-SEMICONDUCTOR TRANSISTORS FOR POSSIBLE LOW-POWER COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR INTEGRATED-CIRCUITS APPLICATIONS
Authors: DELAHIDALGA FJ DEEN MJ GUTIERREZ EA BALESTRA F
Citation: Fj. Delahidalga et al., EFFECT OF THE FORWARD BIASING THE SOURCE-SUBSTRATE JUNCTION IN N-METAL-OXIDE-SEMICONDUCTOR TRANSISTORS FOR POSSIBLE LOW-POWER COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR INTEGRATED-CIRCUITS APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1812-1817
COMPREHENSIVE ANALYSIS OF REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFETS FROM LOW-TEMPERATURE OPERATION
Authors: SZELAG B BALESTRA F GHIBAUDO G
Citation: B. Szelag et al., COMPREHENSIVE ANALYSIS OF REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFETS FROM LOW-TEMPERATURE OPERATION, IEEE electron device letters, 19(12), 1998, pp. 511-513
STUDY OF THE F(0)(1500) F(2)(1565) PRODUCTION IN THE EXCLUSIVE ANNIHILATION (N)OVER-BAR-P-]PI(+)PI(+)PI(-) IN FLIGHT/
Authors: BERTIN A BRUSCHI M CAPPONI M COLLAMATI A DECASTRO S DONA R FERRETTI A GALLI D GIACOBBE B MARCONI U PICCININI M POLI M CESARI NS SPIGHI R VECCHI S VEZZANI A VIGOTTI F VILLA M VITALE A ZOCCOLI A CORRADINI M DONZELLA A RIZZINI EL VENTURELLI L ZENONI A CICALO C MASONI A PUDDU G SERCI S TEMNIKOV P USAI G GORTCHAKOV OE PRAKHOV SN ROZHDESTVENSKY AM SAPOZHNIKOV MG TRETYAK VI GIANOTTI P GUARALDO C LANARO A LUCHERINI V NICHITIU F PETRASCU C ROSCA A ABLEEV V CAVION C GASTALDI U LOMBARDI H MARON G VANNUCCI L VEDOVATO G BENDISCIOLI G FILIPPINI V FONTANA A MONTAGNA P ROTONDI A SAINO A SALVINI P SCOGLIO A BALESTRA F BERGO D BOTTA E BRESSANI T BUSSA MP BUSSO L CALVO D CERELLO P COSTA S DAMIANI P DENISOV OY DISEP F FANARA C FAVA L FELICIELLO A FERRERO L FILIPPI A GARFAGNINI R GRASSO A MAGGIORA A MARCELLO S MIRFAKHRAI N PANZIERI D ROSSETTO E TOSELLO F VALACCA L AGNELLO M IAZZI F MINETTI B PAULI G TESSARO S SANTI L
Citation: A. Bertin et al., STUDY OF THE F(0)(1500) F(2)(1565) PRODUCTION IN THE EXCLUSIVE ANNIHILATION (N)OVER-BAR-P-]PI(+)PI(+)PI(-) IN FLIGHT/, Physical review. D. Particles and fields, 57(1), 1998, pp. 55-66
STUDY OF PHI AND F'(2)(1525) MESON PRODUCTION IN (P)OVER-BAR-P ANNIHILATION AT REST
Authors: ALBERICO A BERTIN A BRUSCHI M CAPPONI M DECASTRO S DONA R FERRETTI A GALLI D GIACOBBE B MARCONI U PICCININI M CESARI NS SPIGHI R VAGNONI V VECCHI S VIGOTTI F VILLA M VITALE A ZOCCOLI A BIANCONI R CORRADINI M RIZZINI EL VENTURELLI L ZENONI A CICALO C MASONI A MAURO S PUDDU G SERCI S TEMNIKOV P USAI G GORCHAKOV OE NOMOKONOV VP PRAKHOV SN ROZHDESTVENSKY AM SAPOZHNIKOV MG TRETYAK VI POLI M GIANOTTI P GUARALDO C LANARO A LUCHERINI V NICHITIU F PETRASCU C ROSCA A ABLEEV VG CAVION C GASTALDI U LOMBARDI M MARON G VANNUCCI L VEDOVATO G BENDISCIOLI G FILIPPINI V FONTANA A MONTAGNA P ROTONDI A SALVINI P SCOGLIO C BALESTRA F BUSSA MP BUSSO L CERELLO P DENISOV OY FAVA L FERRERO L GARFAGNINI R GRASSO A MAGGIORA A PANZARASA A PANZIERI D TOSELLO F VALACCA L BOTTA E BRESSANI T CALVO D COSTA S DISEP D FELICIELLO A FILIPPI A MARCELLO S MIRFAKHRAI N AGNELLO M IAZZI F MINETTI B PAULI G TESSARO S SANTI L
Citation: A. Alberico et al., STUDY OF PHI AND F'(2)(1525) MESON PRODUCTION IN (P)OVER-BAR-P ANNIHILATION AT REST, Physics letters. Section B, 438(3-4), 1998, pp. 430-440
STUDY OF THE ISOVECTOR SCALAR MESONS IN THE CHANNEL (P)OVER-BAR-P-]K-+ - K-S(0)PI(-/+) AT REST WITH INITIAL ANGULAR-MOMENTUM STATE SELECTION/
Authors: BERTIN A BRUSCHI M CAPPONI M DECASTRO S DONA R FERRETTI A GALLI D GIACOBBE B MARCONI U PICCININI M POLI M CESARI NS SPIGHI R VAGNONI V VECCHI S VIGOTTI F VILLA M VITALE A ZOCCOLI A BENEDETTINI A RIZZINI EL ZENONI A VENTURELLI L CORRADINI M DONZELLA A CICALO C MASONI A MAURO S PUDDU G SERCI S TEMNIKOV P USAI G GORCHAKOV OE PRAKHOV SN ROZHDESTVENSKY AM SAPOZHNIKOV MG TRETYAK VI GIANOTTI P GUARALDO C LANARO A LUCHERINI V NICHITIU F PETRASCU C ROSCA A ABLEEV V CAVION C GASTALDI U LOMBARDI M MARON G RICCI RA VEDOVATO G BENDISCIOLI G FILIPPINI V FONTANA A MONTAGNA P ROTONDI A SAINO A SALVINI P SCOGLIO C AGNELLO M BALESTRA F BOTTA E BRESSANI T BUSSA MP BUSSO L CERELLO P CALVO D COSTA S DENISOV O DISEP D FELICIELLO A FERRERO L FILIPPI A GARFAGNINI R GRASSO A IAZZI F MAGGIORA A MARCELLO S MINETTI B PANZIERI D ROSSETTO E TOSELLO F VALACCA L ZOSI G PAULI G TESSARO S SANTI L
Citation: A. Bertin et al., STUDY OF THE ISOVECTOR SCALAR MESONS IN THE CHANNEL (P)OVER-BAR-P-]K-+ - K-S(0)PI(-/+) AT REST WITH INITIAL ANGULAR-MOMENTUM STATE SELECTION/, Physics letters. Section B, 434(1-2), 1998, pp. 180-188
MEASUREMENTS OF THE REACTION (P)OVER-BAR-P-]PHI-ETA OF ANTIPROTON ANNIHILATION AT REST AT 3 HYDROGEN TARGET DENSITIES
Authors: ALBERICO V BERTIN A BRUSCHI M CAPPONI M DECASTRO S DONA R FERRETTI A GALLI D GIACOBBE B MARCONI U PICCININI M POLI M CESARI NS SPIGHI R VAGNONI S VECCHI S VIGOTTI F VILLA M VITALE A ZOCCOLI A BIANCONI R CORRADINI M RIZZINI EL VENTURELLI L ZENONI A CICALO C MASONI A PUDDU G SERCI S TEMNIKOV P USAI G GORTCHAKOV O NOMOKONOV V PRAKHOV S ROZHDESTVENSKY A SAPOZHNIKOV M TRETYAK V GIANOTTI P GUARALDO C LANARO A LUCHERINI V NICHITIU F PETRASCU C ABLEEV V CAVION C GASTALDI U LOMBARDI M MARON G VANNUCCI L VEDOVATO G BENDISCIOLI G FILIPPINI V FONTANA A MONTAGNA P PANZARASA A ROTONDI A SALVINI P SCOGLIO C MIRFAKHRAEE N BALESTRA F BUSSA MP BUSSO L CERELLO P DENISOV O FERRERO L GARFAGNINI R GRASSO A MAGGIORA A PANZIERI D TOSELLO F VALACCA L ZOSI G BOTTA E BRESSANI T CALVO D COSTA S DISEP F FELICIELLO A FILIPPI A MARCELLO S AGNELLO M IAZZI F MINETTI B PAULI G TESSARO S SANTI L
Citation: V. Alberico et al., MEASUREMENTS OF THE REACTION (P)OVER-BAR-P-]PHI-ETA OF ANTIPROTON ANNIHILATION AT REST AT 3 HYDROGEN TARGET DENSITIES, Physics letters. Section B, 432(3-4), 1998, pp. 427-435
SUBSTRATE BIAS DEPENDENCE OF THE TRANSCONDUCTANCE OF DEEP-SUBMICRON SILICON NMOSFETS
Authors: SZELAG B BALESTRA F
Citation: B. Szelag et F. Balestra, SUBSTRATE BIAS DEPENDENCE OF THE TRANSCONDUCTANCE OF DEEP-SUBMICRON SILICON NMOSFETS, Solid-state electronics, 42(10), 1998, pp. 1827-1829
HOT-CARRIER EFFECTS IN DEEP-SUBMICRON BULK SILICON MOSFETS
Authors: SZELAG B DUTOIT M BALESTRA F
Citation: B. Szelag et al., HOT-CARRIER EFFECTS IN DEEP-SUBMICRON BULK SILICON MOSFETS, Solid-state electronics, 42(1), 1998, pp. 43-48
PRODUCTION OF PHI AND OMEGA MESONS IN NEAR-THRESHOLD PP REACTIONS
Authors: BALESTRA F BEDFER Y BERTINI R BLAND LC BRENSCHEDE A BROCHARD F BUSSA MP CHALYSHEV V CHOI SH DEBOWSKI M DZEMIDZIC M FALOMKIN IV FAIVRE JC FAVA L FERRERO L FORYCIARZ J FROLOV V GARFAGNINI R GILL D GRASSO A GROSSE E HEINZ S IVANOV VV JACOBS WW KUHN W MAGGIORA A MAGGIORA M MANARA A PANZIERI D PFAFF HW PIRAGINO G PONTECORVO GB POPOV A RITMAN J SALABURA P SENGER P STROTH J TOSELLO F VIGDOR SE ZOSI G
Citation: F. Balestra et al., PRODUCTION OF PHI AND OMEGA MESONS IN NEAR-THRESHOLD PP REACTIONS, Physical review letters, 81(21), 1998, pp. 4572-4575
A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION
Authors: MARCHAND B GHIBAUDO G BALESTRA F GUEGAN G DELEONIBUS S
Citation: B. Marchand et al., A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION, Microelectronics and reliability, 38(6-8), 1998, pp. 1103-1107
IMPACT OF LATCH PHENOMENON ON LOW-FREQUENCY NOISE IN SOI MOSFETS
Authors: JOMAAH J BALESTRA F
Citation: J. Jomaah et F. Balestra, IMPACT OF LATCH PHENOMENON ON LOW-FREQUENCY NOISE IN SOI MOSFETS, Microelectronics and reliability, 38(4), 1998, pp. 567-570
THE DISTO FIRST LEVEL TRIGGER AT SATURNE
Authors: BALESTRA F BEDFER Y BERTINI R BLAND LC BRENSCHEDE A BROCHARD F BUSSA MP CHOI S DEBOWSKI M DZEMIDZIC M FAIVRE JC FAVA L FERRERO L FORYCIARZ J FROLOV V GARFAGNINI R GILL D GRASSO A HEINZ S JACOBS WW KUHN W MAGGIORA A MAGGIORA M MANARA A PANZIERI D PFAFF H PONTECORVO GB POPOV A RITMAN J SALABURA P STROTH J TCHALYSHEV V TOSELLO F VIGDOR SE ZOSI G
Citation: F. Balestra et al., THE DISTO FIRST LEVEL TRIGGER AT SATURNE, IEEE transactions on nuclear science, 45(3), 1998, pp. 817-820
THE DISTO DATA-ACQUISITION SYSTEM AT SATURNE
Authors: BALESTRA F BEDFER Y BERTINI R BLAND LC BRENSCHEDE A BROCHARD F BUSSA MP CHOI S DEBOWSKI M DZEMIDZIC M FALOMKIN IV FAIVRE JC FAVA L FERRERO L FORYCIARZ J FROLOV V GARFAGNINI R GILL D GRASSO A GROSSE E JACOBS WW KUHN W MAGGIORA A MAGGIORA M MANARA A PANZIERI D PFAFF H PIRAGINO G PONTECORVO GB POPOV A RITMAN J SALABURA P TCHALYSHEV V TOSELLO F VIGDOR SE ZOSI G
Citation: F. Balestra et al., THE DISTO DATA-ACQUISITION SYSTEM AT SATURNE, IEEE transactions on nuclear science, 45(3), 1998, pp. 868-872
HOT-CARRIER EFFECTS AND LIFETIME PREDICTION IN OFF-STATE OPERATION OFDEEP-SUBMICRON SOI N-MOSFETS
Authors: RENN SH RAULY E PELLOIE JL BALESTRA F
Citation: Sh. Renn et al., HOT-CARRIER EFFECTS AND LIFETIME PREDICTION IN OFF-STATE OPERATION OFDEEP-SUBMICRON SOI N-MOSFETS, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1140-1146
HOT-CARRIER EFFECTS AND RELIABLE LIFETIME PREDICTION IN DEEP-SUBMICRON N-CHANNEL AND P-CHANNEL SOI MOSFETS
Authors: RENN SH PELLOIE JL BALESTRA F
Citation: Sh. Renn et al., HOT-CARRIER EFFECTS AND RELIABLE LIFETIME PREDICTION IN DEEP-SUBMICRON N-CHANNEL AND P-CHANNEL SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2335-2342
A THOROUGH INVESTIGATION OF THE DEGRADATION INDUCED BY HOT-CARRIER INJECTION IN DEEP-SUBMICRON N-CHANNEL AND P-CHANNEL PARTIALLY AND FULLY DEPLETED UNIBOND AND SIMOX MOSFETS
Authors: RENN SH RAYNAUD C PELLOIE JL BALESTRA F
Citation: Sh. Renn et al., A THOROUGH INVESTIGATION OF THE DEGRADATION INDUCED BY HOT-CARRIER INJECTION IN DEEP-SUBMICRON N-CHANNEL AND P-CHANNEL PARTIALLY AND FULLY DEPLETED UNIBOND AND SIMOX MOSFETS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2146-2152
SHORT-CHANNEL EFFECTS IN SUB-0.1-MU-M THIN-FILM SOI-MOSFETS
Authors: RAULY E BALESTRA F
Citation: E. Rauly et F. Balestra, SHORT-CHANNEL EFFECTS IN SUB-0.1-MU-M THIN-FILM SOI-MOSFETS, Electronics Letters, 34(7), 1998, pp. 700-701
RELIABLE LIFETIME PREDICTION IN DEEP-SUBMICROMETER P-CHANNEL PARTIALLY DEPLETED SOI MOSFETS
Authors: RENN SH PELLOIE JL BALESTRA F
Citation: Sh. Renn et al., RELIABLE LIFETIME PREDICTION IN DEEP-SUBMICROMETER P-CHANNEL PARTIALLY DEPLETED SOI MOSFETS, Electronics Letters, 34(6), 1998, pp. 597-598
INVESTIGATION OF THE RELIABILITY OF UNIBOND AND SIMOX N-MOSFETS USINGCHARGE-PUMPING AND NOISE TECHNIQUES
Authors: RENN SH JOMAAH J RAYNAUD C BALESTRA F
Citation: Sh. Renn et al., INVESTIGATION OF THE RELIABILITY OF UNIBOND AND SIMOX N-MOSFETS USINGCHARGE-PUMPING AND NOISE TECHNIQUES, Electronics Letters, 34(18), 1998, pp. 1788-1790
TRANSCONDUCTANCE ENHANCEMENT AT LOW-TEMPERATURES IN DEEP-SUBMICROMETER MOSFETS
Authors: SZELAG B BALESTRA F
Citation: B. Szelag et F. Balestra, TRANSCONDUCTANCE ENHANCEMENT AT LOW-TEMPERATURES IN DEEP-SUBMICROMETER MOSFETS, Electronics Letters, 34(18), 1998, pp. 1793-1794
CHANGES IN THE ANNIHILATION DELAY-TIME DISTRIBUTION OF STOPPED ANTIPROTONS IN HELIUM GAS, DUE TO CONTAMINANTS .2. (VOL 110, PG 419, 1997)
Authors: BERTIN A BRUSCHI M DANTONE I DECASTRO S FERRETTI A GALLI D GIACOBBE B MARCONI U PICCININI M CESARI NS SPIGHI R VECCHI S VEZZANI A VIGOTTI F VILLA M VITALE A ZOCCOLI A CORRADINI M DONZELLA A RIZZINI EL VENTURELLI L ZENONI A CICALO C MASONI A PUDDU G SERCI S TEMNIKOV P USAI G ABLEEV VG DENISOV OY GORCHAKOV OE PRAKOV SN ROZHDESTVENSKI AM SAPOZHNIKOV MG TRETYAK VI GIANOTTI P GUARALDO C LANARO A LUCHERINI V NICHITIU F PETRASCU C ROSCA A CAVION C GASTALDI U LOMBARDI M VORONIN A MORANDO M RICCI RA BENDISCIOLI G FILIPPINI V FONTANA A MONTAGNA P ROTONDI A SAINO A SALVINI P AGNELLO M IAZZI F MINETTI B BALESTRA F BOTT E BRESSANI T BUSSA MP BUSSO L CALVO D CERELLO P COSTA S DISEP F FAVA L FELICIELLO A FERRERO L FILIPPI A GARFAGNINI R GRASSO A MAGGIORA A MARCELLO S PANZIERI D PARENA D ROSSETTO E TOSELLO F MARGAGLIOTTI GV PAULI G RIZZO C TESSARO S ZAVATTINI E SANTI L
Citation: A. Bertin et al., CHANGES IN THE ANNIHILATION DELAY-TIME DISTRIBUTION OF STOPPED ANTIPROTONS IN HELIUM GAS, DUE TO CONTAMINANTS .2. (VOL 110, PG 419, 1997), Nuovo cimento della Società Italiana di Fisica. A. Nuclei, particles and fields, 110(6), 1997, pp. 669-670
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