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Results: 1-15 |
Results: 15
AN EPR STUDY OF DEFECTS IN HYDROGENATED AMORPHOUS-CARBON THIN-FILMS
Authors: BARKLIE RC COLLINS M CUNNIFFE J SILVA SRP
Citation: Rc. Barklie et al., AN EPR STUDY OF DEFECTS IN HYDROGENATED AMORPHOUS-CARBON THIN-FILMS, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 864-868
PERCOLATION-DOMINATED CONDUCTIVITY IN A CONJUGATED-POLYMER-CARBON-NANOTUBE COMPOSITE
Authors: COLEMAN JN CURRAN S DALTON AB DAVEY AP MCCARTHY B BLAU W BARKLIE RC
Citation: Jn. Coleman et al., PERCOLATION-DOMINATED CONDUCTIVITY IN A CONJUGATED-POLYMER-CARBON-NANOTUBE COMPOSITE, Physical review. B, Condensed matter, 58(12), 1998, pp. 7492-7495
AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION
Authors: BARKLIE RC COLLINS M HOLM B PACAUD Y SKORUPA W
Citation: Rc. Barklie et al., AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION, Journal of electronic materials, 26(3), 1997, pp. 137-143
MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX
Authors: LARSEN AN ORAIFEARTAIGH C BARKLIE RC HOLM B PRIOLO F FRANZO G LULLI G BIANCONI M NIPOTI R LINDNER JKN MESLI A GROB JJ CRISTIANO F HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
SPIN-DEPENDENT CONDUCTIVITY AND EPR STUDY OF UNDOPED AND DOPED POLY(TERTIARYBUTYLISOTHIANAPHTHENE)
Authors: SOMMER T BARKLIE RC DAVEY A BLAU W
Citation: T. Sommer et al., SPIN-DEPENDENT CONDUCTIVITY AND EPR STUDY OF UNDOPED AND DOPED POLY(TERTIARYBUTYLISOTHIANAPHTHENE), Synthetic metals, 76(1-3), 1996, pp. 259-262
A COMPARATIVE EPR STUDY OF ION-IMPLANTATION INDUCED DAMAGE IN SI, SI1-XGEX(X-NOT-EQUAL-0) AND SIC
Authors: BARKLIE RC
Citation: Rc. Barklie, A COMPARATIVE EPR STUDY OF ION-IMPLANTATION INDUCED DAMAGE IN SI, SI1-XGEX(X-NOT-EQUAL-0) AND SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 139-146
2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX
Authors: ORAIFEARTAIGH C BARKLIE RC LARSEN AN PRIOLO F FRANZO G LULLI G BIANCONI M LINDNER JKN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25
Authors: PRIOLO F SPINELLA C ALBERTAZZI E BIANCONI M LULLI G NIPOTI R LINDNER JKN MESLI A BARKLIE RC SEALY L HOLM B LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION)
Authors: PACAUD Y SKORUPA W PEREZRODRIGUEZ A BRAUER G STOEMENOS J BARKLIE RC
Citation: Y. Pacaud et al., INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 321-324
ELECTRON-PARAMAGNETIC-RESONANCE OF ERBIUM-DOPED SILICON
Authors: CAREY JD DONEGAN JF BARKLIE RC PRIOLO F FRANZO G COFFA S
Citation: Jd. Carey et al., ELECTRON-PARAMAGNETIC-RESONANCE OF ERBIUM-DOPED SILICON, Applied physics letters, 69(25), 1996, pp. 3854-3856
SPIN-DEPENDENT PHOTOCONDUCTIVITY IN CVD-GROWN AND MBE-GROWN SILICON-ON-SAPPHIRE
Authors: ORAIFEARTAIGH C BRADLEY L BARKLIE RC HODGE AM RICHMOND ED
Citation: C. Oraifeartaigh et al., SPIN-DEPENDENT PHOTOCONDUCTIVITY IN CVD-GROWN AND MBE-GROWN SILICON-ON-SAPPHIRE, Semiconductor science and technology, 10(12), 1995, pp. 1595-1603
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON
Authors: SEALY L BARKLIE RC LULLI G NIPOTI R BALBONI R MILITA S SERVIDORI M
Citation: L. Sealy et al., EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 215-218
GE+ ION-IMPLANTATION - A COMPETING TECHNOLOGY
Authors: HEMMENT PLF CRISTIANO F NEJIM A LOMBARDO S LARSSEN KK PRIOLO F BARKLIE RC
Citation: Plf. Hemment et al., GE+ ION-IMPLANTATION - A COMPETING TECHNOLOGY, Journal of crystal growth, 157(1-4), 1995, pp. 147-160
CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON
Authors: STOLK PA SARIS FW BERNTSEN AJM VANDERWEG WF SEALY LT BARKLIE RC KROTZ G MULLER G
Citation: Pa. Stolk et al., CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON, Journal of applied physics, 75(11), 1994, pp. 7266-7286
ANNEALING OF DEFECTS CREATED IN SILICON BY MEV ION-IMPLANTATION
Authors: SEALY L BARKLIE RC BROWN WL JACOBSON DC
Citation: L. Sealy et al., ANNEALING OF DEFECTS CREATED IN SILICON BY MEV ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 528-531
Risultati: 1-15 |