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Results:
1-14
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Results: 14
Authors:
BERA M
Citation: M. Bera, PUBLIC REJECTIONS OF CONTEMPORARY-ART - C ASE-STUDIES - FRENCH - HEINICH,N, La Quinzaine litteraire, (733), 1998, pp. 19-19
Authors:
BERA M
Citation: M. Bera, THE 3-SIDED GAME OF CONTEMPORARY-ART - FR ENCH - HEINICH,N, La Quinzaine litteraire, (733), 1998, pp. 19-19
Authors:
DE SS
GHOSH AK
BERA M
Citation: Ss. De et al., ON SOME PHYSICAL CHARACTERISTICS OF GAAS-(CA,AI)AS QUANTUM-WELL PHOTOLUMINESCENCE, Canadian journal of physics, 76(2), 1998, pp. 105-110
Authors:
DE SS
GHOSH AK
BERA M
HAJRA A
HALDAR JC
Citation: Ss. De et al., INFLUENCE OF BUILT-IN POTENTIAL ON THE EFFECTIVE SURFACE RECOMBINATION VELOCITY FOR A HEAVILY-DOPED HIGH-LOW JUNCTION, Physica. B, Condensed matter, 228(3-4), 1996, pp. 363-368
Authors:
DE SS
GHOSH AK
PATTANAYAK TK
BERA M
HALDAR JC
HAJRA AK
GUHA S
Citation: Ss. De et al., STUDIES ON SOME CHARACTERISTICS OF HEAVILY-DOPED N(-GAAS())N-GE HETEROJUNCTION STRUCTURES/, Physica status solidi. a, Applied research, 155(1), 1996, pp. 279-285
Authors:
DE SS
GHOSH AK
SIL D
SINHA PK
BERA M
Citation: Ss. De et al., EFFECT OF SURFACE RECOMBINATION ON THE TRANSIT-TIME IN HEAVILY-DOPED N(-P JUNCTION SILICON SOLAR-CELL()), Solid-state electronics, 38(6), 1995, pp. 1270-1272
Authors:
DE SS
GHOSH AK
HAJRA AK
HALDER JC
BERA M
Citation: Ss. De et al., STUDIES ON TEMPERATURE AND CONCENTRATION-DEPENDENT MINORITY-CARRIER LIFETIME IN HEAVILY-DOPED INGAASP, Solid-state electronics, 37(7), 1994, pp. 1455-1457
Authors:
DE SS
GHOSH AK
HAJRA AK
BERA M
HALDAR JC
Citation: Ss. De et al., HEAVY DOPING EFFECTS ON OPEN-CIRCUIT VOLTAGE DECAY IN AN ABRUPT P(-N JUNCTION()), Solid-state electronics, 37(10), 1994, pp. 1775-1777
Authors:
DE SS
GHOSH AK
SINHA PK
BERA M
SIL D
HALDAR JC
Citation: Ss. De et al., STUDIES ON SURFACE RECOMBINATION VELOCITY IN A HEAVILY-DOPED ABRUPT N(-P JUNCTION()), Physica status solidi. a, Applied research, 146(2), 1994, pp. 5-8
Authors:
DE SS
GHOSH AK
BERA M
HALDER JC
HAZRA AK
Citation: Ss. De et al., STUDIES ON AUGER LIFETIME IN HEAVILY-DOPED IN0.72GA0.28AS0.6P0.4, Indian Journal of Pure & Applied Physics, 32(2), 1994, pp. 195-197
Authors:
DE SS
GHOSH AK
HALDAR JC
HAJRA AK
BERA M
Citation: Ss. De et al., LEAKAGE CURRENT STUDY OF A HIGH-LOW JUNCTION WITH VARIATION OF INJECTION LEVEL, Physica status solidi. a, Applied research, 139(1), 1993, pp. 29-33
Authors:
DE SS
GHOSH AK
HALDAR JC
HAJRA AK
BERA M
Citation: Ss. De et al., STUDIES ON AUGER RECOMBINATION LIFETIME IN HEAVILY-DOPED INGAASP, Physica status solidi. a, Applied research, 138(1), 1993, pp. 13-16
Authors:
DE SS
GHOSH AK
HALDER JC
BERA M
HAZRA AK
Citation: Ss. De et al., TEMPERATURE-DEPENDENCE OF AUGER LIFETIME IN HEAVILY-DOPED HG1-XCDXTE, Journal of applied physics, 74(11), 1993, pp. 6642-6644
Authors:
DE SS
GHOSH AK
BERA M
HAZRA AK
HALDAR JC
Citation: Ss. De et al., STUDIES ON CARRIER LIFETIME IN HEAVILY-DOPED INGAASP, Canadian journal of physics, 71(11-12), 1993, pp. 582-585
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1-14
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