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Results:
1-17
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Results: 17
Authors:
CHAI KW
BOARD K
Citation: Kw. Chai et K. Board, GENERAL LARGE-SIGNAL CHARGE-CONTROL EQUATIONS FOR THE MOSFET DRAIN AND SOURCE CURRENT UNDER NONQUASISTATIC CONDITIONS, IEE proceedings. Circuits, devices and systems, 145(4), 1998, pp. 236-242
Authors:
CHEN XB
MAWBY PA
BOARD K
SALAMA CAT
Citation: Xb. Chen et al., THEORY OF A NOVEL VOLTAGE-SUSTAINING LAYER FOR POWER DEVICES, Microelectronics, 29(12), 1998, pp. 1005-1011
Authors:
LI ZM
MAWBY PA
BOARD K
Citation: Zm. Li et al., A PHYSICAL INSIGHT INTO THE QUASI-SATURATION EFFECT IN VDMOS POWER TRANSISTORS, International journal of electronics, 83(1), 1997, pp. 13-22
Authors:
ZENG J
MAWBY PA
TOWERS MS
BOARD K
Citation: J. Zeng et al., MODELING OF THE QUASI-SATURATION BEHAVIOR IN THE HIGH-VOLTAGE MOSFET WITH VERTICAL TRENCH GATE, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 28-32
Authors:
CHEN XB
MAWBY PA
SALAMA CAT
TOWERS MS
ZENG J
BOARD K
Citation: Xb. Chen et al., LATERAL HIGH-VOLTAGE DEVICES USING AN OPTIMIZED VARIATIONAL LATERAL DOPING, International journal of electronics, 80(3), 1996, pp. 449-459
Authors:
ZENG J
MAWBY PA
TOWERS MS
BOARD K
Citation: J. Zeng et al., HYBRID FIELD-DEPENDENT MOBILITY MODEL FOR THE SIMULATION OF POWER VDMOSTS, Electronics Letters, 32(2), 1996, pp. 138-140
Authors:
ZENG J
MAWBY PA
TOWERS MS
BOARD K
Citation: J. Zeng et al., EFFECT OF CARRIER LIFETIMES ON FORWARD CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS, IEE proceedings. Circuits, devices and systems, 142(3), 1995, pp. 205-207
Authors:
MAWBY PA
ZENG J
BOARD K
Citation: Pa. Mawby et al., ELECTROTHERMAL SIMULATION OF POWER VDMOS TRANSISTORS, INTERNATIONAL JOURNAL OF NUMERICAL METHODS FOR HEAT & FLUID FLOW, 5(2), 1995, pp. 185-192
Authors:
ZENG J
MAWBY PA
TOWERS MS
BOARD K
Citation: J. Zeng et al., NUMERICAL-ANALYSIS OF A TRENCH VDMOST STRUCTURE WITH NO QUASI-SATURATION, Solid-state electronics, 38(4), 1995, pp. 821-828
Authors:
BOARD K
HU ZR
Citation: K. Board et Zr. Hu, ANALYSIS AND CHARACTERISTICS OF BULK-INVERTED NARROW-GATE TRENCH IGBTS, Microelectronics, 26(6), 1995, pp. 535-542
Authors:
HU ZR
MAWBY PA
TOWERS MS
BOARD K
ZENG J
Citation: Zr. Hu et al., DEGRADATION IN ON-STATE CHARACTERISTICS OF IGBTS THROUGH SELF-HEATING, IEE proceedings. Circuits, devices and systems, 141(6), 1994, pp. 439-444
Authors:
MAWBY PA
HU ZR
TOWERS MS
EVANS MJ
BOARD K
Citation: Pa. Mawby et al., RECOMBINATION AND JOULE HEATING EFFECTS IN GTO THYRISTORS WITH SPATIALLY VARYING LIFETIMES, IEE proceedings. Circuits, devices and systems, 141(4), 1994, pp. 292-298
Authors:
ZENG J
MAWBY PA
TOWERS MS
BOARD K
Citation: J. Zeng et al., THERMOELECTRIC STUDY OF THE TRENCH-GATE POWER VDMOS TRANSISTOR, Compel, 13(4), 1994, pp. 735-742
Authors:
HU ZR
MAWBY PA
TOWERS MS
BOARD K
Citation: Zr. Hu et al., SIMULATION OF TRANSIENT SELF-HEATING DURING POWER VDMOS TRANSISTOR TURN-OFF, Compel, 13(4), 1994, pp. 743-756
Authors:
ZENG J
MAWBY PA
TOWERS MS
BOARD K
HU ZR
Citation: J. Zeng et al., DESIGN OF IGBTS FOR LATCH-UP FREE OPERATION, Solid-state electronics, 37(8), 1994, pp. 1471-1475
Authors:
HU ZR
MAWBY PA
TOWERS MS
BOARD K
Citation: Zr. Hu et al., SIMULATION OF TRANSIENT SELF-HEATING DURING POWER VDMOS TRANSISTOR TURN-OFF, International journal of electronics, 77(4), 1994, pp. 525-534
Authors:
BOARD K
HU ZR
Citation: K. Board et Zr. Hu, NEW LATCH-UP-FREE IGBT WITH LOW ON-RESISTANCE, Electronics Letters, 29(18), 1993, pp. 1664-1666
Risultati:
1-17
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