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Results: 1-25 | 26-50 | 51-63
Results: 1-25/63
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI GROWTH ON GE(001) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: DENTEL D BISCHOFF JJ BOLMONT D KUBLER L
Citation: D. Dentel et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI GROWTH ON GE(001) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 404(1-3), 1998, pp. 304-307
STABILIZATION OF A FACE-CENTERED-CUBIC MN STRUCTURE WITH THE AG LATTICE-PARAMETER
Authors: SCHIEFFER P KREMBEL C HANF MC BOLMONT D GEWINNER G
Citation: P. Schieffer et al., STABILIZATION OF A FACE-CENTERED-CUBIC MN STRUCTURE WITH THE AG LATTICE-PARAMETER, Journal of magnetism and magnetic materials, 165(1-3), 1997, pp. 180-184
MAGNETOOPTIC KERR-EFFECT MEASUREMENTS ON FE3-XCOXSI LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.5) EPITAXIALLY STABILIZED ON SI(111)
Authors: HONG S PIRRI C WETZEL P BOLMONT D GEWINNER G BOUKARI S BEAUREPAIRE E
Citation: S. Hong et al., MAGNETOOPTIC KERR-EFFECT MEASUREMENTS ON FE3-XCOXSI LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.5) EPITAXIALLY STABILIZED ON SI(111), Journal of magnetism and magnetic materials, 165(1-3), 1997, pp. 212-215
IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE
Authors: CHELLY R ANGOT T LOUIS P BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE, Applied surface science, 115(3), 1997, pp. 299-306
ELECTRICAL BEHAVIOR OF LASER-DAMAGED SILICON PHOTODIODES
Authors: MOEGLIN JP GAUTIER B JOECKLE R BOLMONT D
Citation: Jp. Moeglin et al., ELECTRICAL BEHAVIOR OF LASER-DAMAGED SILICON PHOTODIODES, Optics and lasers in engineering, 28(5), 1997, pp. 317-330
GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: CHELLY R WERCKMANN J ANGOT T LOUIS P BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY, Thin solid films, 294(1-2), 1997, pp. 84-87
VACANCY-INDUCED ELECTRONIC STATES IN ERSI1.7(0001)
Authors: STAUFFER L MHARCHI A SAINTENOY S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: L. Stauffer et al., VACANCY-INDUCED ELECTRONIC STATES IN ERSI1.7(0001), Journal of physics and chemistry of solids, 58(4), 1997, pp. 567-572
X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)
Authors: AUBEL D KUBLER L BISCHOFF JL SIMON L BOLMONT D
Citation: D. Aubel et al., X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001), Applied surface science, 99(2), 1996, pp. 169-183
REACTIVE LASER DEPOSITION OF HIGH-QUALITY YBACUO AND ERBACUO FILMS
Authors: BERLING D DELVECCHIO A ACQUAVIVA S BOLMONT D LEGGIERI G LOEGEL B DEGIORGI ML LUCHES A MEHDAOUI A TAPFER L
Citation: D. Berling et al., REACTIVE LASER DEPOSITION OF HIGH-QUALITY YBACUO AND ERBACUO FILMS, Applied surface science, 96-8, 1996, pp. 739-743
EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI
Authors: SIMON L KUBLER L BISCHOFF JL BOLMONT D FAURE J CLAVERIE A BALLADORE JL
Citation: L. Simon et al., EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI, Physical review. B, Condensed matter, 54(15), 1996, pp. 10559-10564
PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)
Authors: STOEHR M AUBEL D JUILLAGUET S BISCHOFF JL KUBLER L BOLMONT D HAMDANI F FRAISSE B FOURCADE R
Citation: M. Stoehr et al., PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001), Physical review. B, Condensed matter, 53(11), 1996, pp. 6923-6926
CRYSTALLOGRAPHIC AND ELECTRONIC-STRUCTURE OF CU CR/CU(001) SANDWICHES/
Authors: SCHIEFFER P ROUYER D KREMBEL C HANF MC BOLMONT D GEWINNER G
Citation: P. Schieffer et al., CRYSTALLOGRAPHIC AND ELECTRONIC-STRUCTURE OF CU CR/CU(001) SANDWICHES/, Thin solid films, 275(1-2), 1996, pp. 133-136
FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS
Authors: ANGOT T KOULMANN JJ BOLMONT D GEWINNER G
Citation: T. Angot et al., FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS, Surface science, 368, 1996, pp. 190-195
STM INVESTIGATION OF 2-DIMENSIONAL AND 3-DIMENSIONAL ER DISILICIDE GROWN EPITAXIALLY ON SI(111)
Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G ROGE TP PALMINO F SAVALL C LABRUNE JC
Citation: P. Wetzel et al., STM INVESTIGATION OF 2-DIMENSIONAL AND 3-DIMENSIONAL ER DISILICIDE GROWN EPITAXIALLY ON SI(111), Surface science, 355(1-3), 1996, pp. 13-20
HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE
Authors: ANGOT T BOLMONT D KOULMANN JJ
Citation: T. Angot et al., HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE, Surface science, 352, 1996, pp. 401-406
FORMATION OF EPITAXIAL COSIX SILICIDE AT THE CO COSI2(111) INTERFACE STUDIED BY PHOTOEMISSION AND BAND-STRUCTURE CALCULATIONS/
Authors: HONG S SONNET P STAUFFER L WETZEL P GEWINNER G BOLMONT D PIRRI C
Citation: S. Hong et al., FORMATION OF EPITAXIAL COSIX SILICIDE AT THE CO COSI2(111) INTERFACE STUDIED BY PHOTOEMISSION AND BAND-STRUCTURE CALCULATIONS/, Surface science, 352, 1996, pp. 617-621
INITIAL GROWTH MODE OF ER SILICIDE ON SI(111) BY SOLID-PHASE EPITAXY
Authors: ROGE TP PALMINO F SAVALL C LABRUNE JC SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: Tp. Roge et al., INITIAL GROWTH MODE OF ER SILICIDE ON SI(111) BY SOLID-PHASE EPITAXY, Surface science, 352, 1996, pp. 622-627
GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1
Authors: AUBEL D KUBLER L BISCHOFF JL BOLMONT D
Citation: D. Aubel et al., GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1, Surface science, 352, 1996, pp. 634-640
INITIAL-STAGES OF GROWTH OF MN ON AG(100) STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION AND VALENCE-BAND PHOTOEMISSION
Authors: SCHIEFFER P KREMBEL C HANF MC BOLMONT D GEWINNER G
Citation: P. Schieffer et al., INITIAL-STAGES OF GROWTH OF MN ON AG(100) STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION AND VALENCE-BAND PHOTOEMISSION, Surface science, 352, 1996, pp. 823-827
INTERACTION OF H WITH EPITAXIAL ER SILICIDE LAYERS ON SI(111) - ADSORPTION VERSUS ABSORPTION
Authors: SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., INTERACTION OF H WITH EPITAXIAL ER SILICIDE LAYERS ON SI(111) - ADSORPTION VERSUS ABSORPTION, Surface science, 349(2), 1996, pp. 145-154
OBSERVATION OF A TEMPORAL EVOLUTION OF DEFECTED EPITAXIAL ERBIUM SILICIDE LAYERS AT ROOM-TEMPERATURE
Authors: SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., OBSERVATION OF A TEMPORAL EVOLUTION OF DEFECTED EPITAXIAL ERBIUM SILICIDE LAYERS AT ROOM-TEMPERATURE, Solid state communications, 98(11), 1996, pp. 1015-1019
INITIAL GROWTH AND STRUCTURE OF MN ON AG(100) - FORMATION OF A SUPERFICIAL ALLOY
Authors: SCHIEFFER P KREMBEL C HANF MC BOLMONT D GEWINNER G
Citation: P. Schieffer et al., INITIAL GROWTH AND STRUCTURE OF MN ON AG(100) - FORMATION OF A SUPERFICIAL ALLOY, Solid state communications, 97(9), 1996, pp. 757-761
AC SUSCEPTIBILITY OF HTSC IN THE LOW-FIELD LIMIT
Authors: BERLING D BOLMONT D LOEGEL B MEHDAOUI A
Citation: D. Berling et al., AC SUSCEPTIBILITY OF HTSC IN THE LOW-FIELD LIMIT, Solid state communications, 97(8), 1996, pp. 731-735
SURFACE ATOMIC-STRUCTURE AND SYMMETRY PROPERTIES OF ERSI1.7 ON SI(111)
Authors: MHARCHI A STAUFFER L SAINTENOY S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: A. Mharchi et al., SURFACE ATOMIC-STRUCTURE AND SYMMETRY PROPERTIES OF ERSI1.7 ON SI(111), Solid state communications, 97(3), 1996, pp. 249-254
ACTIVATION-ENERGIES IN SUPERCONDUCTING HIGH-TEMPERATURE CERAMICS
Authors: MEHDAOUI A BERLING D BOLMONT D LOEGEL B
Citation: A. Mehdaoui et al., ACTIVATION-ENERGIES IN SUPERCONDUCTING HIGH-TEMPERATURE CERAMICS, Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 132-137
Risultati: 1-25 | 26-50 | 51-63